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NEW PRODUCT
DMG2302UK
N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
V(BR)DSS 20V
RDS(ON) Max 90mΩ @ VGS = 4.5V 120mΩ @ VGS = 2.5V
ID Max TA = +25°C
2.8A
2.4A
Description and Applications
This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.
Backlighting Power Management Functions DC-DC Converters Motor Control
Features and Benefits
Low On-Resistance Low Input Capacitance Fast Switching Speed ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish –Matte Tin Annealed over Copper Leadframe.
Solderable per MIL-STD-202, Method 208 Terminals Connections: See Diagram Below Weight: 0.009 grams (Approximate)
D
D
ESD protected Gate
Top View
G
Gate Protection Diode
S
Internal Schematic
GS Top View
Ordering Information (Note 4)
Notes:
Part Number DMG2302UK-7 DMG2302UK-13
Case SOT23 SOT23
Packaging 3,000/Tape & Reel 10,000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
22K
YM
22K = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: C = 2015) M = Month (ex: 9 = September)
Date Code Key Year Code
Month Code
2015 C
Jan 1
2016 D
Feb Mar 23
DMG2302UK
Document number: DS38439 Rev. 2 - 2
2017 E
Apr 4
2018 F
May Jun 56
2019 G
Jul 7
Aug 8
2020 H
Sep 9
1 of 7 www.diodes.com
2021 I
2022 J
Oct Nov Dec OND
January 2016
© Diodes Incorporated
NEW PRODUCT
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (Note 6) VGS = 4.5V
Steady State
Maximum Continuous Body Diode Forward Current (Note 6)
Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%)
TA = +25°C TA = +70°C
Symbol VDSS VGSS
ID
IS IDM
DMG2302UK
Value 20 ±12
2.8 2.2
1.1 12
Units V V
A
A A
Thermal Characteristics
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range
Steady State Steady State
Symbol PD RθJA PD RθJA
TJ, TSTG
Value 0.66 192 1.1 115 -55 to +150
Units W
°C/W W
°C/W °C
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage
TJ = +25°C
Static Drain-Source On-Resistance
Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge
Symbol
BVDSS IDSS IGSS
VGS(TH)
RDS(ON)
VSD
CISS COSS CRSS
RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR
Min
20 — —
0.3
—
—
— — — — — — — — — — — — — —
Typ
— — —
0.6 61 80 0.7
130 26 18 2.7 1.4 2.8 0.1 0.5 0.6 2.7 4.2 1.7 5.3 0.5
Notes:
5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
Max
— 10 ±10
1.0 90 120 1.2
— — — — — — — — — — — — — —
Unit
Test Condition
V VGS = 0V, ID = 250µA µA VDS = 16V, VGS = 0V µA VGS = ±10V, VDS = 0V
V VDS = VGS, ID = 250µA mΩ VGS = 4.5V, ID = 3.6A
VGS = 2.5V, ID = 3.1A V VGS = 0V, IS = 1.0A
pF
pF
VDS = 10V, VGS = 0V f = 1.0MHz
pF
Ω VDS = 0V, VGS = 0V, f = 1MHz
nC
nC nC VDS = 10V, ID = 3.6A
nC
ns
ns VDS = 10V, VGS = 4.5V, ns RG = 1Ω, RL = 2.78Ω
ns
ns IF = 3.6A, di/dt = 100A/μs nC IF = 3.6A, di/dt = 100A/μs
DMG2302UK
Document number: DS38439 Rev. 2 - 2
2 of 7 www.diodes.com
January 2016
© Diodes Incorporated
DMG2302UK
NEW PRODUCT
ID, DRAIN CURRENT (A)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
10.0 9.0 8.0 7.0 6.0
VGS = 3.0V VGS = 4.0V VGS = 4.5V
VGS = 2.5V VGS = 2.0V
5.0 4.0 VGS = 1.5V.