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DMG2302UK Dataheets PDF



Part Number DMG2302UK
Manufacturers Diodes
Logo Diodes
Description N-Channel MOSFET
Datasheet DMG2302UK DatasheetDMG2302UK Datasheet (PDF)

NEW PRODUCT DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 90mΩ @ VGS = 4.5V 120mΩ @ VGS = 2.5V ID Max TA = +25°C 2.8A 2.4A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters  Motor Control Features and Benefits  Low On-Resistanc.

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NEW PRODUCT DMG2302UK N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V(BR)DSS 20V RDS(ON) Max 90mΩ @ VGS = 4.5V 120mΩ @ VGS = 2.5V ID Max TA = +25°C 2.8A 2.4A Description and Applications This MOSFET is designed to minimize the on-state resistance (RDS(ON)), yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power Management Functions  DC-DC Converters  Motor Control Features and Benefits  Low On-Resistance  Low Input Capacitance  Fast Switching Speed  ESD Protected Gate  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)  Qualified to AEC-Q101 Standards for High Reliability Mechanical Data  Case: SOT23  Case Material: Molded Plastic, “Green” Molding Compound. UL Flammability Classification Rating 94V-0  Moisture Sensitivity: Level 1 per J-STD-020  Terminals: Finish –Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208  Terminals Connections: See Diagram Below  Weight: 0.009 grams (Approximate) D D ESD protected Gate Top View G Gate Protection Diode S Internal Schematic GS Top View Ordering Information (Note 4) Notes: Part Number DMG2302UK-7 DMG2302UK-13 Case SOT23 SOT23 Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 22K YM 22K = Product Type Marking Code YM = Date Code Marking Y or Y= Year (ex: C = 2015) M = Month (ex: 9 = September) Date Code Key Year Code Month Code 2015 C Jan 1 2016 D Feb Mar 23 DMG2302UK Document number: DS38439 Rev. 2 - 2 2017 E Apr 4 2018 F May Jun 56 2019 G Jul 7 Aug 8 2020 H Sep 9 1 of 7 www.diodes.com 2021 I 2022 J Oct Nov Dec OND January 2016 © Diodes Incorporated NEW PRODUCT Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = 4.5V Steady State Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) TA = +25°C TA = +70°C Symbol VDSS VGSS ID IS IDM DMG2302UK Value 20 ±12 2.8 2.2 1.1 12 Units V V A A A Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range Steady State Steady State Symbol PD RθJA PD RθJA TJ, TSTG Value 0.66 192 1.1 115 -55 to +150 Units W °C/W W °C/W °C Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage TJ = +25°C Static Drain-Source On-Resistance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Symbol BVDSS IDSS IGSS VGS(TH) RDS(ON) VSD CISS COSS CRSS RG QG QG QGS QGD tD(ON) tR tD(OFF) tF tRR QRR Min 20 — — 0.3 — — — — — — — — — — — — — — — — Typ — — — 0.6 61 80 0.7 130 26 18 2.7 1.4 2.8 0.1 0.5 0.6 2.7 4.2 1.7 5.3 0.5 Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. Max — 10 ±10 1.0 90 120 1.2 — — — — — — — — — — — — — — Unit Test Condition V VGS = 0V, ID = 250µA µA VDS = 16V, VGS = 0V µA VGS = ±10V, VDS = 0V V VDS = VGS, ID = 250µA mΩ VGS = 4.5V, ID = 3.6A VGS = 2.5V, ID = 3.1A V VGS = 0V, IS = 1.0A pF pF VDS = 10V, VGS = 0V f = 1.0MHz pF Ω VDS = 0V, VGS = 0V, f = 1MHz nC nC nC VDS = 10V, ID = 3.6A nC ns ns VDS = 10V, VGS = 4.5V, ns RG = 1Ω, RL = 2.78Ω ns ns IF = 3.6A, di/dt = 100A/μs nC IF = 3.6A, di/dt = 100A/μs DMG2302UK Document number: DS38439 Rev. 2 - 2 2 of 7 www.diodes.com January 2016 © Diodes Incorporated DMG2302UK NEW PRODUCT ID, DRAIN CURRENT (A) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 10.0 9.0 8.0 7.0 6.0 VGS = 3.0V VGS = 4.0V VGS = 4.5V VGS = 2.5V VGS = 2.0V 5.0 4.0 VGS = 1.5V.


DMC4050SSD DMG2302UK DMN2016LFG


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