GFMK2545

GFMK2545 Trench SCHOTTKY Diodes ■ Features ● ， Low VF，low IR ● ， Low Power loss, High efficiency ● （ESD>=30KV） :IEC-61000-4-2， High ESD（ESD>=30KV） Reference standard: IEC - 61000-4-2, contact ● IF（AV） 25A ● VRRM 45V ■ Applications ● The solar industry ■ Outline Dimensions and Mark G F 0 0 9-2 A ： A-A ■（） Limiting Values（Absolute Maximum Rating） Item Repetitive Peak Reverse Voltage Average Rectified Output Current （） Surge(Non-repetitive)Forward Current Symbol VRRM Io IFSM Current Squared Time I2t Unit V A A A2s Conditions IR=0.2mA;；Ta=25℃ 60HZ ，，Ta=25℃ 60HZ sine wave, R- load, Ta=25℃ 60HZ，，Ta=25℃ 60HZ sine wave, 1 cycle, Ta=25℃ 1ms≤t＜8.3ms Tj=25℃ Storage Temperature Tstg ℃ Junction Temperature ，， Tj ℃ ≤1h（1）① IN DC Forward Mode-Forward Operations， without reverse bias, t ≤1 h (Fig. 1)① ■ （Ta=25℃ ） Electrical Characteristics（Ta=25℃ Unless otherwise specified） GFMK2545 45 25 275 315 -55 ~ +150 -55~+200 Item Peak Forward Voltage Peak Reverse Current () Thermal Resistance(Typical) Symbol VFM IRRM1 IRRM2 RθJ-c Unit V mA ℃/W Test Condition I FM =25.0A(Every Chip) VRM =VRRM Ta=25℃ Ta=100℃/125℃ Between junction and case Max 0.58 0.1 7/20 1.6 ■ NOTE ● ①Meets the requirements of IEC 61215 Ed. 2 bypass diode thermal test. Document Number 0344 Rev. 1.0, 25-OCT-12 Yangzhou Yangjie Electronic Technology Co., Ltd. www.21yangjie.com Io(A) GFMK2545 ■（） Characteristics(Typical) 25.0 22.5 20.0 17.5 15.0 12.5 10.0 7.5 5.0 2.5 0 ...