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SCS210KGHR
SiC Schottky Barrier Diode
Description
SCS210KGHR SiC
Schottky
Barrier Diode VR 1200V IF 10A QC 34nC lFeatures 1) Shorter recovery time 2) Reduced temperature dependence 3) High-speed switching possible lConstruction Silicon carbide epitaxial planer
schottky
diode lAEC-Q101 Qualified TO-220AC (1) Data Sheet lInner circuit (2) (3) (1) (1) Cathode (2) Cathode (3) Anode (2) (3) lPackaging sp...
Rohm
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SCS210KGHR
SiC Schottky Barrier Diode
- Rohm
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