RTR025P02FRA

Transistors 2.5V Drive Pch MOS FET RTR025PP0022FRA RTRR0T2R50P2052PF0R2A AEC-Q101 Qualified zFeatures 1) Low On-resistance. 2) Built-in G-S Protection Diode. 3) Small and Surface Mount Package (TSMT3). zApplication Power switching, DC / DC converter. zStructure Silicon P-channel MOS FET zPackaging specifications Package Type Code Basic ordering unit (pieces) RRTTRR002255PP0022FRA Taping TL 3000 zAbsolute maximum ratings (Ta=25°C) Parameter Drain-source voltage Gate-source voltage Drain current Continuous Pulsed Source current (Body diode) Continuous Pulsed Total power dissipation Channel temperature Range of Storage temperature ∗1 Pw≤10µs, Duty cycle≤1% ∗2 Mounted on a ceramic board Symbol VDSS VGSS ID IDP ∗1 IS ISP ∗1 PD ∗2 Tch Tstg Limits −20 ±12 ±2.5 ±10 −0.8 −3.2 1.0 150 −55 to +150 zExternal dimensions (Unit : mm) TSMT3 2.9 0.4 (3) 1.0MAX 0.85 0.7 (1) (2) 0.95 0.95 1.9 0~0.1 0.16 1.6 2.8 0.3~0.6 (1) Gate (2) Source (3) Drain Each lead has same dimensions Abbreviated symbol : TY zEquivalent circuit (3) Unit V V A A A A W °C °C (1) ∗1 ∗2 (2) ∗1 ESD PROTECTION DIODE ∗2 BODY DIODE (1) Gate (2) Source (3) Drain zThermal resistance Parameter Channel to ambient ∗ Mounted on a ceramic board. Symbol Rth (ch-a) ∗ Limits 125 Unit °C / W Rev.A 1/4 Transistors RTRR0T2R50P2052PF0R2A zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Conditions Gate-source leakage IGSS − − ±10 µA VGS=±12V, VDS=0V Drain-source...