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RHU002N06FRA Dataheets PDF



Part Number RHU002N06FRA
Manufacturers Rohm
Logo Rohm
Description 4V Drive Nch MOS FET
Datasheet RHU002N06FRA DatasheetRHU002N06FRA Datasheet (PDF)

4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. AEC-Q101 Qualified Dimensions (Unit : mm) UMT3 SOT-323 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : KP Applications Switching Packaging specifica.

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4V Drive Nch MOSFET RHU002N06FRA Structure Silicon N-channel MOSFET transistor Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy. AEC-Q101 Qualified Dimensions (Unit : mm) UMT3 SOT-323 2.0 0.3 (3) 0.9 0.2 0.7 1.25 2.1 0.1Min. (1) Source (2) Gate (3) Drain (2) (1) 0.65 0.65 1.3 0.15 Each lead has same dimensions Abbreviated symbol : KP Applications Switching Packaging specifications Package Code Type Basic ordering unit (pieces) RRHHUU000022NN0066FRA Taping T106 3000 Equivalent circuit (3) (2) ∗2 Absolute maximum ratings (Ta=25C) Parameter Symbol Drain-source voltage VDSS Gate-source voltage VGSS Drain current Continuous Pulsed ID IDP ∗1 Source current (Body diode) Continuous Pulsed Total power dissipation IS ISP ∗1 PD ∗2 Channel temperature Tch Storage temperature Tstg ∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended Limits 60 ±20 ±200 ±800 200 800 200 150 −55 to +150 Unit V V mA mA mA mA mW °C °C Thermal resistance Parameter Symbol Channel to ambient Rth (ch-a)∗ ∗ With each pin mounted on the recommended land. Limits 625 Unit °C / W ∗1 ∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE (1) Source (2) Gate (3) Drain ∗ A protection diode has been built in between the gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded. www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 1/3 2012.05 - Rev.C RHU002N06FRA Electrical characteristics (Ta=25C) Parameter Symbol Min. Gate leakage current IGSS − Drain-source breakdown voltage V (BR) DSS 60 Drain cutoff current IDSS − Gate threshold voltage VGS (th) 1 Drain-source on-state resistance RDS (on)∗ − − Forward transfer admittance l Yfs l∗ 0.1 Input capacitance Ciss − Output capacitance Coss − Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge Crss td (on)∗ tr∗ td (off)∗ tf∗ Qg∗ Qgs∗ Qgd∗ − − − − − − − − ∗ Pulsed Typ. − − − − 1.7 2.8 − 15 8 4 6 5 12 95 2.2 0.6 0.3 Max. ±10 − 1 2.5 2.4 4.0 − − − − − − − − 4.4 − − Unit Test Conditions μA VGS=±20V, VDS=0V V ID=1mA, VGS=0V μA VDS=60V, VGS=0V V VDS=10V, ID=1mA ID=200mA, VGS=10V Ω ID=200mA, VGS=4V S VDS=10V, ID=200mA pF VDS=10V pF VGS=0V pF f=1MHz ns ID=100mA, VDD 30V ns VGS=10V ns RL=300Ω ns RG=10Ω nC VDD 30V nC VGS=10V nC ID=200mA Body diode characteristics (Source-drain) (Ta=25C) Parameter Symbol Min. Typ. Max. Unit Forward voltage VSD ∗ − − 1.2 V ∗Pulsed Conditions IS=200mA, VGS=0V Data Sheet Electrical characteristic curves 0.8 10V 0.7 8V 0.6 6V Ta=25°C Pulsed DRAIN CURRENT : ID (A) 0.5 4V 0.4 0.3 3.5V 0.2 VGS=3V 0.1 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.1 Typical Output Characteristics 10 Ta=125°C 75°C 25°C −25°C VGS=10V Pulsed DRAIN CURRENT : ID (A) 1 VDS=10V Pulsed 0.1 Ta=−25˚C 25˚C 75˚C 125˚C 0.01 0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE-SOURCE VOLTAGE : VGS (V) Fig.2 Typical Transfer Characteristics 10 Ta=125°C 75°C 25°C −25°C VGS=4V Pulsed STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 1.0 0.01 0.1 DRAIN CURRENT : ID (A) 1.0 Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( Ι ) www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved. 1.0 0.01 0.1 DRAIN CURRENT : ID (A) 1.0 Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ ) 2/3 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) GATE THRESHOLD VOLTAGE : VGS (th) (V) 2.5 VDS=10V ID=1mA Pulsed 2.0 1.5 1.0 0.5 0.0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.3 Gate Threshold Voltage vs. Channel Temperature 7 Ta=25°C Pulsed 6 5 4 ID=200mA 3 2 100mA 1 0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V) Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage 2012.05 - Rev .C RHU002N06FRA Data Sheet STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω) 3.0 VGS=10V Pulsed 2.5 ID=200mA 2.0 100mA 1.5 1.0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C) Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature 1 Ta=−25°C 0.1 25°C VGS=10V Pulsed 75°C 125°C 0.01 FORWARD TRANSFER ADMITTANCE : I Yfs I (S) 0.001 0.001 0.01 0.1 DRAIN CURRENT : ID (A) 1 Fig.10 Forward Transfer Admittance vs. Drain Current CAPACITANCE : C (pF) REVERSE DRAIN CURRENT : IDR (A) 1 VGS=0V Pulsed 0.1 Ta=125°C 75°C 25°C −25°C 0.01 0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : VSD (V) Fig.8 Reverse Drain Current vs. Source-Drain Voltage ( Ι ) 100 Ta=25°C f=1MHz VGS=0V Ciss 10 Coss Crss 1 0.01 0.1 1 10 100 DRAIN-SOURCE VOLTAGE : VDS (V) Fig.11 Typical Capacitance vs. Drain-Source Voltage SWITCHING TIME : t (ns) REVERSE DRAIN CURRENT : IDR .


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