Document
4V Drive Nch MOSFET
RHU002N06FRA
Structure Silicon N-channel MOSFET transistor
Features 1) Low on-resistance. 2) High ESD. 3) High-speed switching. 4) Low-voltage drive (4V). 5) Drive circuits can be simple. 6) Parallel use is easy.
AEC-Q101 Qualified
Dimensions (Unit : mm)
UMT3
SOT-323
2.0 0.3
(3)
0.9 0.2 0.7
1.25 2.1 0.1Min.
(1) Source (2) Gate (3) Drain
(2) (1)
0.65 0.65 1.3
0.15
Each lead has same dimensions
Abbreviated symbol : KP
Applications Switching
Packaging specifications
Package
Code
Type
Basic ordering unit (pieces)
RRHHUU000022NN0066FRA
Taping T106 3000
Equivalent circuit
(3)
(2) ∗2
Absolute maximum ratings (Ta=25C)
Parameter
Symbol
Drain-source voltage
VDSS
Gate-source voltage
VGSS
Drain current
Continuous Pulsed
ID IDP ∗1
Source current (Body diode)
Continuous Pulsed
Total power dissipation
IS ISP ∗1 PD ∗2
Channel temperature
Tch
Storage temperature
Tstg
∗1 Pw≤10μs, Duty cycle≤1% ∗2 Each terminal mounted on a recommended
Limits 60 ±20
±200 ±800 200 800 200 150 −55 to +150
Unit V V mA mA mA mA
mW °C °C
Thermal resistance
Parameter
Symbol
Channel to ambient
Rth (ch-a)∗
∗ With each pin mounted on the recommended land.
Limits 625
Unit °C / W
∗1
∗1 ESD PROTECTION DIODE (1) ∗2 BODY DIODE
(1) Source (2) Gate (3) Drain
∗ A protection diode has been built in between the
gate and the source to protect against static electricity when the product is in use. Use the protection circuit when fixed voltages are exceeded.
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1/3
2012.05 - Rev.C
RHU002N06FRA
Electrical characteristics (Ta=25C)
Parameter
Symbol Min.
Gate leakage current
IGSS
−
Drain-source breakdown voltage V (BR) DSS 60
Drain cutoff current
IDSS
−
Gate threshold voltage
VGS (th)
1
Drain-source on-state resistance RDS (on)∗
− −
Forward transfer admittance
l Yfs l∗ 0.1
Input capacitance
Ciss −
Output capacitance
Coss
−
Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Crss td (on)∗
tr∗ td (off)∗
tf∗ Qg∗ Qgs∗ Qgd∗
− − − − − − − −
∗ Pulsed
Typ. − − − − 1.7 2.8 − 15 8 4 6 5 12 95 2.2 0.6 0.3
Max. ±10
− 1 2.5 2.4 4.0 − − − − − − − − 4.4 − −
Unit Test Conditions
μA VGS=±20V, VDS=0V
V ID=1mA, VGS=0V
μA VDS=60V, VGS=0V
V VDS=10V, ID=1mA
ID=200mA, VGS=10V Ω
ID=200mA, VGS=4V
S VDS=10V, ID=200mA
pF VDS=10V pF VGS=0V pF f=1MHz
ns ID=100mA, VDD 30V ns VGS=10V ns RL=300Ω ns RG=10Ω
nC VDD 30V nC VGS=10V nC ID=200mA
Body diode characteristics (Source-drain) (Ta=25C)
Parameter
Symbol Min. Typ. Max. Unit
Forward voltage
VSD ∗
−
− 1.2 V
∗Pulsed
Conditions IS=200mA, VGS=0V
Data Sheet
Electrical characteristic curves
0.8 10V
0.7 8V
0.6
6V
Ta=25°C Pulsed
DRAIN CURRENT : ID (A)
0.5
4V 0.4
0.3 3.5V
0.2 VGS=3V
0.1
0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.1 Typical Output Characteristics
10
Ta=125°C 75°C 25°C
−25°C
VGS=10V Pulsed
DRAIN CURRENT : ID (A)
1 VDS=10V Pulsed
0.1 Ta=−25˚C 25˚C 75˚C 125˚C
0.01
0.001 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 GATE-SOURCE VOLTAGE : VGS (V)
Fig.2 Typical Transfer Characteristics
10
Ta=125°C 75°C 25°C
−25°C
VGS=4V Pulsed
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω)
1.0 0.01
0.1 DRAIN CURRENT : ID (A)
1.0
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current ( Ι )
www.rohm.com ○c 2012 ROHM Co., Ltd. All rights reserved.
1.0 0.01
0.1 DRAIN CURRENT : ID (A)
1.0
Fig.5 Static Drain-Source On-State Resistance vs. Drain Current ( ΙΙ )
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STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω)
GATE THRESHOLD VOLTAGE : VGS (th) (V)
2.5 VDS=10V ID=1mA Pulsed
2.0
1.5
1.0
0.5
0.0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C)
Fig.3 Gate Threshold Voltage vs. Channel Temperature
7 Ta=25°C Pulsed
6
5
4 ID=200mA
3
2 100mA
1
0 0 5 10 15 20 GATE-SOURCE VOLTAGE : VGS (V)
Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
2012.05 - Rev .C
RHU002N06FRA
Data Sheet
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (Ω)
3.0 VGS=10V Pulsed
2.5
ID=200mA 2.0
100mA 1.5
1.0 −50 −25 0 25 50 75 100 125 150 CHANNEL TEMPERATURE : Tch (°C)
Fig.7 Static Drain-Source On-State Resistance vs. Channel Temperature
1 Ta=−25°C
0.1 25°C
VGS=10V Pulsed
75°C 125°C
0.01
FORWARD TRANSFER ADMITTANCE : I Yfs I (S)
0.001 0.001
0.01
0.1
DRAIN CURRENT : ID (A)
1
Fig.10 Forward Transfer Admittance vs. Drain Current
CAPACITANCE : C (pF)
REVERSE DRAIN CURRENT : IDR (A)
1 VGS=0V Pulsed
0.1 Ta=125°C 75°C 25°C −25°C
0.01
0.001 0.0 0.2 0.4 0.6 0.8 1.0 1.2 SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.8 Reverse Drain Current vs. Source-Drain Voltage ( Ι )
100 Ta=25°C f=1MHz VGS=0V
Ciss 10
Coss
Crss
1 0.01
0.1
1
10 100
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.11 Typical Capacitance vs. Drain-Source Voltage
SWITCHING TIME : t (ns)
REVERSE DRAIN CURRENT : IDR .