Field Stop Trench IGBT
RGT8NS65D
650V 4A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 4A
1.65V 65W
lFeatures
1...
Description
RGT8NS65D
650V 4A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 4A
1.65V 65W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
LPDS / TO-262
(2)
(1) (3)
lInner Circuit
(2)
*1 (1)
(3)
(1)(2)(3)
(1) Gate (2) Collector (3) Emitter *1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications General Inverter
lPackaging Specifications Packaging Reel Size (mm)
Taping / Tube 330 / -
UPS Power Conditioner
Tape Width (mm)
24 / -
Type
Basic Ordering Unit (pcs) 1,000 / 1,000
Welder
Packing Code
TL / C9
Marking
RGT8NS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Collector - Emitter Voltage
VCES
650
Gate - Emitter Voltage
VGES
30
Collector Current Pulsed Collector Current Diode Forward Current Diode Pulsed Forward Current Power Dissipation
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
TC = 25°C TC = 100°C
IC IC ICP*1 IF IF IFP*1 PD PD
8 4 12 7 4 12 65 32
Operating Junction Temperature
Tj -40 to +175
Storage Temperature *1 Pulse width limited by Tjmax.
Tstg -55 to +175
Unit V V A A A A A A W W °C °C
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1/11
2015.11 - Rev.C
RGT8NS65D lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c) Rθ(j-c)
Va...
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