RGT8BM65D

RGT8BM65D 650V 4A Field Stop Trench IGBT Data Sheet VCES IC(100°C) VCE(sat) (Typ.) PD 650V 4A 1.65V 62W lFeatures 1) Low Collector - Emitter Saturation Voltage 2) Low Switching Loss 3) Short Circuit Withstand Time 5μs 4) Built in Very Fast & Soft Recovery FRD (RFN - Series) lOutline TO-252 (2) (1) (3) lInner Circuit (2) *1 (1) (3) (1) Gate (2) Collector (3) Emitter *1 Built in FRD 5) Pb - free Lead Plating ; RoHS Compliant lApplications General Inverter lPackaging Specifications Packaging Reel Size (mm) Taping 330 UPS Power Conditioner Tape Width (mm) Type Basic Ordering Unit (pcs) 16 2,500 Welder Taping Code TL Marking RGT8BM65D lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage Gate - Emitter Voltage Collector Current Pulsed Collector Current TC = 25°C TC = 100°C Diode Forward Current Diode Pulsed Forward Current TC = 25°C TC = 100°C Power Dissipation Operating Junction Temperature TC = 25°C TC = 100°C Storage Temperature *1 Pulse width limited by Tjmax. VCES VGES IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg 650 30 8 4 12 7 4 12 62 31 -40 to +175 -55 to +175 V V A A A A A A W W °C °C www.rohm.com © 2014 ROHM Co., Ltd. All rights reserved. 1/11 2014.05 - Rev.A RGT8BM65D lThermal Resistance Parameter Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case Data Sheet Symbol Rθ(j-c) Rθ(j-c) Values Min. Typ. Max. Unit - - 2.40 °C/W - - 9.20...