Field Stop Trench IGBT
RGT80TS65D
650V 40A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 40A 1.65V 234W
lFeature...
Description
RGT80TS65D
650V 40A Field Stop Trench IGBT
Data Sheet
VCES IC(100°C) VCE(sat) (Typ.)
PD
650V 40A 1.65V 234W
lFeatures
1) Low Collector - Emitter Saturation Voltage
2) Low Switching Loss 3) Short Circuit Withstand Time 5μs
4) Built in Very Fast & Soft Recovery FRD (RFN - Series)
lOutline
TO-247N
lInner Circuit
(1)(2)(3)
(2)
*1 (1)
(3)
(1) Gate (2) Collector (3) Emitter
*1 Built in FRD
5) Pb - free Lead Plating ; RoHS Compliant
lApplications General Inverter
lPackaging Specifications Packaging Reel Size (mm)
Tube -
UPS Power Conditioner
Tape Width (mm) Type
Basic Ordering Unit (pcs)
450
Welder
Taping Code
C11
Marking
RGT80TS65D
lAbsolute Maximum Ratings (at TC = 25°C unless otherwise specified)
Parameter
Symbol
Value
Unit
Collector - Emitter Voltage
Gate - Emitter Voltage
Collector Current Pulsed Collector Current
TC = 25°C TC = 100°C
Diode Forward Current Diode Pulsed Forward Current
TC = 25°C TC = 100°C
Power Dissipation Operating Junction Temperature
TC = 25°C TC = 100°C
Storage Temperature *1 Pulse width limited by Tjmax.
VCES VGES
IC IC ICP*1 IF IF IFP*1 PD PD Tj Tstg
650 30 70 40 120 40 20 120 234 117 -40 to +175 -55 to +175
V V A A A A A A W W °C °C
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1/11
2014.05 - Rev.B
RGT80TS65D lThermal Resistance
Parameter
Thermal Resistance IGBT Junction - Case Thermal Resistance Diode Junction - Case
Data Sheet
Symbol
Rθ(j-c) Rθ(j-c)
Values Min. Typ. Max.
Unit
- - 0.64 °C/W
...
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