RB520SM-40

Data Sheet Schottky Barrier Diode RB520SM-40 lApplications Small current rectification lDimensions (Unit : mm) 0.8±0.05 0.12±0.05 lLand size figure (Unit : mm) 0.8 1.2±0.05 1.6±0.1 0.6 1.7 lFeatures 1)Ultra small mold type. (EMD2) 2)Low IR 3)High reliability lConstruction Silicon epitaxial 0.3±0.05 ROHM : EMD2 JEDEC :SOD-523 JEITA : SC-79 dot (year week factory) 0.6±0.1 EMD2 lStructure lTaping specifications (Unit : mm) lAbsolute maximum ratings (Ta=25°C) Parameter Symbol Reverse voltage (repetitive) Reverse voltage (DC) Average rectified forward current VRM VR Io Forward current surge peak (60Hz・1cyc) Junction temperature IFSM Tj Storage temperature Tstg Limits 45 40 200 1 150 -40 to +150 Unit V V mA A °C °C lElectrical characteristics (Ta=25°C) Parameter Symbol Forward voltage Reverse current VF1 VF2 IR1 IR2 Min. - Typ. - Max. 0.39 0.55 1 10 Unit Conditions V IF=10mA V IF=100mA μA VR=10V μA VR=40V www.rohm.com © 2011 ROHM Co., Ltd. All rights reserved. 1/3 2011.06 - Rev.A RB520SM-40 　 Data Sheet FORWARD CURRENT:IF(mA) 1000 100 Ta=125℃ 10 Ta=75℃ Ta=25℃ 1 0.1 0 Ta=-25℃ 100 200 300 400 500 600 FORWARD VOLTAGE : VF(mV) VF-IF CHARACTERISTICS REVERSE CURRENT:IR(μA) 1000 100 10 1 0.1 0.01 0.001 0 Ta=125℃ Ta=75℃ Ta=25℃ Ta=-25℃ 10 20 30 REVERSE VOLTAGE : VR(V) VR-IR CHARACTERISTICS 40 510 Ta=25℃ 500 IF=100mA n=30pcs 490 480 AVE:491.2mV 470 460 VF DISPERSION MAP REVERSE CURRENT:IR(nA) 1000 900 800 700 600 500 400 300 200 100 0...