1N5822

CREAT BY ART 3A, 20V - 40V Schottky Barrier Rectifiers 1N5820 - 1N5822 Taiwan Semiconductor FEATURES - Low forward voltage drop - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 MECHANICAL DATA Case: DO-201AD Molding compound, UL flammability classification rating 94V-0 Part no. with suffix "H" means AEC-Q101 qualified Packing code with suffix "G" means green compound (halogen-free) Terminal: Pure tin plated leads, solderable per JESD22-B102 Meet JESD 201 class 2 whisker test Polarity: Indicated by cathode band Weight: 1.10g (approximately) DO-201AD MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted) PARAMETER SYMBOL 1N5820 1N5821 1N5822 Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current VRRM 20 30 40 VRMS 14 21 28 VDC 20 30 40 IF(AV) 3 Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load IFSM 70 Maximum instantaneous forward voltage (Note 1) @3A VF 0.475 0.500 0.525 Maximum reverse current @ rated VR TJ=25°C TJ=100°C Typical Junction Capacitance (Note 2) Typical thermal resistance Operating junction temperature range Storage temperature range Note 1: Pulse test with PW=300 μs, 1% duty cycle Note 2: Measure at 1 MHz and Applied Reverse Voltage of 4.0 V D.C. IR CJ RθJ...