N-Channel Logic Level Enhancement Mode Field Effect Transistor
Description
BSS123W — N-Channel Logic Level Enhancement Mode Field Effect Transistor
December 2015
BSS123W N-Channel Logic Level Enhancement Mode Field Effect Transistor
Features
0.17 A, 100 V, RDS(ON) = 6 Ω at VGS = 10 V RDS(ON) = 10 Ω at VGS = 4.5 V
High Density Cell Design for Low RDS(ON) Rugged and Reliable
Ultra Small Surface Mount Package
Very Low Cap...
