N-Channel Power MOSFET
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 13A, 600Volts
DESCRIPTION
The Nel...
Description
SEMICONDUCTOR
13N60 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET 13A, 600Volts
DESCRIPTION
The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications.
FEATURES
RDS(ON) = 0.26Ω @ VGS = 10V
Ultra low gate charge(40nC max.)
Low reverse transfer capacitance (CRSS = 3pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability 150°C operation temperature
D
GDS
TO-220AB (13N60A)
GDS
TO-220F (13N60AF)
D (Drain)
PRODUCT SUMMARY
ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max.
13 600 0.26 @ VGS = 10V 40
G (Gate)
S (Source)
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
Drain to Source voltage
TJ=25°C to 150°C
VDGR
Drain to Gate voltage
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
TC=25°C TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
lAR=4.3A,RGS=50Ω, VGS=10V
EAS dv/dt PD
Single pulse avalanche energy (Note 2) MOSFET dv/dt ruggedness Peak diode recovery dv/dt (Note 3)
Total power dissipation (Derate above 25°C)
lAS=4.3A
TC=25°C
TO-220AB TO-220F
...
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