13N60AF

SEMICONDUCTOR 13N60 Series RRooHHSS Nell High Power Products N-Channel Power MOSFET 13A, 600Volts DESCRIPTION The Nell 13N60 is a three-terminal silicon device with current conduction capability of 13A, fast switching speed, low on-state resistance, breakdown voltage rating of 600V, and max. threshold voltage of 4 volts. They are designed for use in applications such as switched mode power supplies. DC to DC converters, PWM motor controls, bridge circuits and general purpose switching applications. FEATURES RDS(ON) = 0.26Ω @ VGS = 10V Ultra low gate charge(40nC max.) Low reverse transfer capacitance (CRSS = 3pF typical) Fast switching capability 100% avalanche energy specified Improved dv/dt capability 150°C operation temperature D GDS TO-220AB (13N60A) GDS TO-220F (13N60AF) D (Drain) PRODUCT SUMMARY ID (A) VDSS (V) RDS(ON) (Ω) QG(nC) max. 13 600 0.26 @ VGS = 10V 40 G (Gate) S (Source) ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified) SYMBOL PARAMETER TEST CONDITIONS VDSS Drain to Source voltage TJ=25°C to 150°C VDGR Drain to Gate voltage RGS=20KΩ VGS Gate to Source voltage ID Continuous Drain Current TC=25°C TC=100°C IDM Pulsed Drain current(Note 1) IAR Avalanche current(Note 1) EAR Repetitive avalanche energy(Note 1) lAR=4.3A,RGS=50Ω, VGS=10V EAS dv/dt PD Single pulse avalanche energy (Note 2) MOSFET dv/dt ruggedness Peak diode recovery dv/dt (Note 3) Total power dissipation (Derate above 25°C) lAS=4.3A TC=25°C TO-220AB TO-220F ...