NTE
NTE


2N3906

Silicon PNP Transistor


2N3906 Datasheet PDF
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2N3905 & 2N3906
Silicon PNP Transistor
General Purpose
TO92 Type Package
Absolute Maximum Ratings:
CollectorEmitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
CollectorBase Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V
EmitterBase Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V
Continuous Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA
Total
DDeveircaeteDAisbsoipvaeti2o5n5(CTA.
=
..
+255C),
.......
.P.D.
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. . 625mW
5.0mW/5C
Total Device Dissipation (TA = +605C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mW
Total
DDeveircaeteDAisbsoipvaeti2o5n5(CTC.
=
..
.+.2.5.5.C.).,.P. D. .
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. . . . 1.5W
12mW/5C
Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 555 to +1505C
Thermal Resistance, Junction to Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 83.35C/W
Thermal Resistance, Junction to Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2005C/W
Electrical Characteristics: (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
OFF Characteristics
CollectorEmitter Breakdown Voltage
CollectorBase Breakdown Voltage
EmitterBase Breakdown Voltage
Collector Cutoff Current
Base Cutoff Current
ON Characteristics (Note 1)
V(BR)CEO
V(BR)CBO
V(BR)EBO
ICEX
IBL
IC = 1mA, IB = 0, Note 1
IC = 105 A, IE = 0
IE = 105 A, IC = 0
VCE = 30V, VEB = 3V
VCE = 30V, VEB = 3V
DC Current Gain
2N3905
hFE VCE = 1V, IC = 0.1mA
2N3906
2N3905
2N3906
VCE = 1V, IC = 1mA
Min Typ Max Unit
40 − −
40 − −
5−−
− − 50
− − 50
V
V
V
nA
nA
30
60
40
80
2N3905
2N3906
2N3905
2N3906
2N3905
2N3906
VCE = 1V, IC = 10mA
VCE = 1V, IC = 50mA
VCE = 1V, IC = 100mA
50 150
100 300
30 − −
60 − −
15 − −
30 − −
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.
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2N3906 Datasheet PDF
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Electrical Characteristics (Cont’d): (TA = +255C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
ON Characteristics (Cont’d) (Note 1)
CollectorEmitter Saturation Voltage
BaseEmitter Saturation Voltage
SmallSignal Characteristics
VCE(sat)
VBE(sat)
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
IC = 10mA, IB = 1mA
IC = 50mA, IB = 5mA
− − 0.25
− − 0.4
0.65 0.85
− − 0.95
V
V
V
V
Current GainBandwidth Product
2N3905
2N3906
fT IC = 10mA, VCE = 20V, f = 100MHz 200 − − MHz
250 − − MHz
Output Capacitance
Input Capacitance
Input Impedance
2N3905
2N3906
Cobo
Cibo
hie
VCB = 5V, IE = 0, f = 1MHz
VCB = 0.5V, IC = 0, f = 100kHz
IC = 1mA, VCE = 10V, f = 1kHz
− − 4.5 pF
− − 10.0 pF
0.5 8.0
2.0 12
k3
k3
Voltage Feedback Ratio
2N3905
2N3906
hre IC = 1mA, VCE = 10V, f = 1kHz
0.1 5.0 x 104
0.1 10 x 104
SmallSignal Current Gain
2N3905
2N3906
hfe IC = 1mA, VCE = 10V, f = 1kHz
50 200
100 400
Output Admittance
2N3905
2N3906
hoe IC = 1mA, VCE = 10V, f = 1kHz
1.0 40 5 mhos
3.0 60 5 mhos
Noise Figure
2N3905
NF IfC==101H00z5tAo,1V5C.7Ek=Hz5V, RS = 1k3 ,
− − 5.0 db
2N3906
− − 4.0 db
Switching Characteristics
Delay Time
Rise Time
Storage Time
2N3905
2N3906
td
tr
VIBC1C==1m3VA, VEB = 0.5V, IC = 10mA,
ts VIBC1C==IB32V=, I1Cm=A10mA,
− − 35 ns
− − 35 ns
− − 200 ns
− − 225 ns
Fall Time
2N3905
tf
− − 60 ns
2N3906
− − 75 ns
Note 1. Pulse Test: Pulse Width 3 3005 s, Duty Cycle 3 2%.


2N3906 Datasheet PDF
No Preview Available !

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.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.021 (.445) Dia Max
.100 (2.54)
EBC
.050 (1.27)
.105 (2.67) Max
.205 (5.2) Max
.165
(4.2)
Max
.105 (2.67) Max




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