2N2222A Datasheet PDF
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DESCRIPTION
The 2N2218A, 2N2219A, 2N2221A and 2N2222A
are silicon planar epitaxial NPN transistors in Jedec
TO-39 (for 2N2218A and 2N2219A) and in Jedec
TO-18 (for 2N2221A and 2N2222A) metal cases.
They are designed for high-speed switching appli-
cations at collector currents up to 500 mA, and fea-
ture useful current gain over a wide range of collec-
tor current, low leakage currents and low saturation
voltages.
2N2218A/2N2219A approved to CECC
50002-100, 2N2221A/2N2222A approved to
CECC 50002-101 available on request.
2N2218A-2N2219A
2N2221A-2N2222A
HIGH SPEED SWITCHES
TO-39
TO-18
INTERNA L SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RAT INGS
Symbol
V CB O
VCE O
V EBO
IC
Pto t
T st g
Tj
Parameter
Collector-base Voltage (IE =0 )
Collector-emitter Voltage (IB =0 )
Emitter-base Voltage (IC =0 )
Collector Current
Total Power Dissipation at T amb 25 °C
for 2N2218 A and 2N2 219A
for 2N2221 A and 2N2 222A
at T ca s e 25 °C
for 2N2218 A and 2N2 219A
for 2N2221 A and 2N2 222A
Storage Temperature
Junction Temperature
January 1989
V al ue
75
40
6
0.8
0.8
0.5
3
1.8
– 65 to 200
175
Unit
V
V
V
A
W
W
W
W
°C
°C
1/8
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2N2222A Datasheet PDF
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2N 2218A-2N2219A-2N2221A-2N2222A
THERMAL DATA
R th j- c as e Thermal Resistance Junction-case
Rth j-amb Thermal Resistance Junction-ambient
2N2218A
2N2219A
Max 50 °C/W
Max 187.5 °C/W
2N2221A
2N2222A
83.3 °C/W
300 °C/W
ELECTRICAL CHARACTERISTICS (T amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cutoff Current
(IE = 0)
VCB = 60 V
VCB =6 0 V
T amb = 150 °C
I CE X
Collector Cutoff Current
(VBE =– 3 V)
VCE =6 0 V
I EB O
Emitter Cutoff Current
(IC =0 )
VEB =3 V
IBEX Base Cutoff Current
(VBE =– 3 V)
VCE =6 0 V
V( BR) CBO Collector-base Breakdown
Voltage (IE =0 )
IC =1 0 µA7
V(BR) CEO * Collector-emitter Breakdown
Voltage (IB =0 )
IC =1 0 mA
V( BR) EBO Emittter-base Breakdown
Voltage (IC =0 )
IE =1 0 µA6
VCE (s at )* Collector-emitter Saturation
Voltage
IC =1 50 mA
IC =5 00 mA
IB =1 5 mA
IB =5 0 mA
VB E (s at )* Base-emitter Saturation
Voltage
IC =1 50 mA
IC =5 00 mA
IB =1 5 mA
IB =5 0 mA
h FE *
DC Current Gain
for 2N2218A and 2N2221A
IC = 0.1 mA
VCE =1 0 V
IC =1 mA
IC =1 0 mA
IC =1 50 mA
VCE =1 0 V
VCE =1 0 V
VCE =1 0 V
I C =5 00 mA VCE =1 0 V
I C =1 50 mA VCE =1 V
IC =1 0 mA
VCE =1 0 V
T amb =– 55 °C
h FE * DC Current Gain
for 2N2219A and 2N2222A
IC = 0.1 mA
IC =1 mA
VCE =1 0 V
VCE =1 0 V
IC =1 0 mA
VCE =1 0 V
IC =1 50 mA
IC =5 00 mA
IC =1 50 mA
VCE =1 0 V
VCE =1 0 V
VCE =1 V
IC =1 0 mA
VCE =1 0 V
T amb =– 55 °C
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Min.
5
40
0.6
20
25
35
40
25
20
15
35
50
75
100
40
50
35
Typ.
Max.
10
10
10
10
20
0.3
1
1.2
2
120
300
Unit
nA
µA
nA
nA
nA
V
V
V
V
V
V
V
2/8


2N2222A Datasheet PDF
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2N 221 8A -2N221 9A -2N222 1A -2N222 2A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
hfe
Parameter
Small Signal Current Gain
fT Transition Frequency
C EBO
C CB O
Re( hi e)
NF
Emitter-base Capacitance
Collector-base Capacitance
Real Part of Input
Impedance
Noise Figure
h ie **
Input Impedance
h re ** Reverse Voltage Ratio
h oe ** Output Admittance
t d * **
Delay Time
t r* **
t s* **
Rise Time
Storage Time
tf*** Fall Time
r bb ’C b’ c Feedback Time Constant
** f = 1 kHz
*** see test circuit.
Test Conditions
I C = 1 mA
f = 1 kHz
VCE = 10 V
for 2N2218A and 2N2221A
for 2N2219A and 2N2222A
IC = 10 mA
VCE = 10 V
f = 1 kHz
for 2N2218A and 2N2221A
for 2N2219A and 2N2222A
I C = 20 mA
VCE =2 0 V
f = 100 MHz
for 2N2218A and 2N2221A
for 2N2219A and 2N2222A
I C =0
f = 100 kHz
VEB = 0.5 V
I E =0
f = 100 kHz
VCB =1 0 V
IC =2 0 mA
f = 300 MHz
VCE =2 0 V
IC =1 00 µA
R 9 =1 k
VCE =1 0 V
f = 1 kHz
IC =1 mA
for 2N2218A
for 2N2219A
IC =1 0 mA
for 2N2218A
for 2N2219A
VCE =1 0 V
and 2N2221A
and 2N2222A
VCE =1 0 V
and 2N2221A
and 2N2222A
IC =1 mA
for 2N2218A
for 2N2219A
IC =1 0 mA
for 2N2218A
for 2N2219A
VCE =1 0 V
and 2N2221A
and 2N2222A
VCE =1 0 V
and 2N2221A
and 2N2222A
IC =1 mA
for 2N2218A
for 2N2219A
IC =1 0 mA
for 2N2218A
for 2N2219A
VCE =1 0 V
and 2N2221A
and 2N2222A
VCE =1 0 V
and 2N2221A
and 2N2222A
IC =1 50 mA
I B1 =1 5 mA
VCC =3 0 V
VBB = – 0.5 V
IC =1 50 mA
I B1 =1 5 mA
VCC =3 0 V
VBB = – 0.5 V
I C =1 50 mA VCC =3 0 V
I B1 = –I B2 =1 5 mA
I C =1 50 mA VCC =3 0 V
I B1 = –I B2 =1 5 mA
IC =2 0 mA
f = 31.8 MHz
VCE = 20 V
Min.
30
50
50
75
250
300
1
2
0.2
0.25
3
5
10
25
Typ. Max. Unit
150
300
300
375
MHz
MHz
25 pF
8 pF
60
4d B
3.5
8
1
1.25
5x10–4
8x10–4
2.5x10–4
4x10–4
15 µS
35 µS
100 µS
200 µS
10 ns
25 ns
225 ns
60 ns
150 ps
3/8


2N2222A Datasheet PDF
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2N2218A-2N2219A-2N2221A-2N2222A
Normalized DC Current Gain.
Collector-emitter Saturation Voltage.
Contours of Constant Narrow Band Noise Figure.
Switching Time vs. Collector Current.
4/8


2N2222A Datasheet PDF
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Test Circuit fot td, tr.
2N 221 8A -2N2219A-2N2221A-2N2222A
PULSE GENERATOR :
tr 20 ns
PW 200 ns
ZIN =5 0
Test Circuit fot td,t r.
TO OSCILLOSCOPE :
tr 5.0 ns
ZIN < 100 K
CIN 12 pF
PULSE GENERATOR :
PW 10 µst
ZIN =5 0
TC 5.0 ns
TO OSCILLOSCOPE :
r <5 .0 ns
ZIN > 100 K
CIN 12 pF
5/8


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2N2218A-2N2219A-2N2221A-2N2222A
TO-18 MECHANICAL DATA
DIM.
A
B
D
E
F
G
H
I
L
MIN.
2.54
45o
mm
TYP.
12.7
MAX.
0.49
5.3
4.9
5.8
1.2
1.16
MIN.
0.100
45o
inch
TYP.
0.500
MAX.
0.019
0.208
0.193
0.228
0.047
0.045
G
I
H
L
6/8
DA
C
0016043


2N2222A Datasheet PDF
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2N2218A-2N2219A-2N2221A-2N2222A
DIM.
A
B
D
E
F
G
H
I
L
MIN.
12.7
5.08
TO39 MECHANICAL DATA
mm
TYP.
MAX.
MIN.
0.500
0.49
6.6
8.5
9.4
0.200
1.2
0.9
45o (typ.)
inch
TYP.
MAX.
0.019
0.260
0.334
0.370
0.047
0.035
G
I
H
L
DA
P008B
7/8


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2N2218A-2N2219A-2N2221A-2N2222A
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
© 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands -
Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A
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