Fairchild Semiconductor Electronic Components Datasheet



Q0165R

FSQ0165R


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

September 2007
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311
Green Mode Fairchild Power Switch (FPS™) for
Valley Switching Converter - Low EMI and High Efficiency
Features
„ Optimized for Valley Switching (VSC)
„ Low EMI through Variable Frequency Control and
Inherent Frequency Modulation
„ High-Efficiency through Minimum Voltage Switching
„ Narrow Frequency Variation Range over Wide Load
and Input Voltage Variation
„ Advanced Burst-Mode Operation for Low Standby
Power Consumption
„ Pulse-by-Pulse Current Limit
„ Various Protection Functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD)
„ Under-Voltage Lockout (UVLO) with Hysteresis
„ Internal Start-up Circuit
„ Internal High-Voltage SenseFET (650V)
„ Built-in Soft-Start (15ms)
Applications
„ Power Supply for DVP Player and DVD Recorder,
Set-Top Box
„ Adapter
„ Auxiliary Power Supply for PC, LCD TV, and PDP TV
Description
A Valley Switching Converter generally shows lower EMI
and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ-series is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for valley switching
operation with minimal external components. The PWM
controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout, Leading Edge
Blanking (LEB), optimized gate driver, internal soft-start,
temperature-compensated precise current sources for
loop compensation, and self-protection circuitry.
Compared with discrete MOSFET and PWM controller
solutions, the FSQ-series reduces total cost, component
count, size and weight; while simultaneously increasing
efficiency, productivity, and system reliability. This device
provides a basic platform that is well suited for cost-
effective designs of valley switching fly-back converters.
Related Application Notes
„ AN-4137, AN-4141, AN-4147, AN-4150 (Flyback)
„ AN-4134 (Forward)
FPSTM is a trademark of Fairchild Semiconductor Corporation.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Ordering Information
Product
Number(5)
PKG.
Operating
Temp.
Cur-
rent
Limit
FSQ311
FSQ311L
8-DIP
-40 to +85C
8-LSOP
0.6A
FSQ321
FSQ321L
8-DIP
-40 to +85°C 0.6A
8-LSOP
FSQ0165RN 8-DIP
-40 to +85°C 0.9A
FSQ0165RL 8-LSOP
FSQ0265RN 8-DIP
-40 to +85°C 1.2A
FSQ0265RL 8-LSOP
FSQ0365RN 8-DIP
-40 to +85°C 1.5A
FSQ0365RL 8-LSOP
RDS(ON)
Max.
Maximum Output Power(1)
230VAC±15%(2)
85-265VAC
Adapter(3) Open-Frame(4) Adapter(3) Open-Frame(4)
19Ω 7W 10W 6W 8W
Replaces
Devices
FSDL321
FSDM311
19Ω 8W
12W
7W
10W
FSDL321
FSDM311
10Ω 10W
15W
9W
13W
FSDL0165RN
6Ω 14W
4.5Ω
17.5W
20W
25W
11W
13W
16W
19W
FSDM0265RN
FSDM0265RNB
FSDM0365RN
FSDM0365RNB
Notes:
1. The junction temperature can limit the maximum output power.
2. 230VAC or 100/115VAC with doubler. The maximum power with CCM operation.
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
4. Maximum practical continuous power in an open-frame design at 50°C ambient.
5. Pb-free package per JEDEC J-STD-020B.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
2
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Circuit
AC
IN
Vstr
Drain
Sync
PWM
GND
Vfb Vcc
VO
FSQ0365RN Rev.00
Figure 1. Typical Flyback Application
Internal Block Diagram
Vfb
3
Sync
4
0.7V/0.2V
+
0.35/0.55
VCC
Vref
VBurst
-
Idelay
IFB
3R
R
Soft-
Start
+
-
PWM
Vstr
5
Vcc Drain
2 678
OSC
Vref
VCC good
+
-
8V/12V
LEB
200ns
SQ
RQ
Gate
driver
6V
VSD
Sync
6V
Vovp
TSD
2.5μs time
delay
VCC good
SQ
RQ
AOCP
Figure 2. Functional Block Diagram
VOCP
(1.1V)
1
GND
FSQ0365RN Rev.00
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
3
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Pin Configuration
GND
Vcc
Vfb
Sync
8-DIP
8-VLSOP
D
D
D
Vstr
FSQ0365RN Rev.01
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin # Name
Description
1 GND SenseFET source terminal on primary side and internal control ground.
Positive supply voltage input. Although connected to an auxiliary transformer winding, current
2
Vcc
is supplied from pin 5 (Vstr) via an internal switch during startup (see Internal Block Diagram
Section). It is not until VCC reaches the UVLO upper threshold (12V) that the internal start-up
switch opens and device power is supplied via the auxiliary transformer winding.
The feedback voltage pin is the non-inverting input to the PWM comparator. It has a 0.9mA
current source connected internally while a capacitor and optocoupler are typically connected
3 Vfb externally. There is a time delay while charging external capacitor Cfb from 3V to 6V using an
internal 5μA current source. This time delay prevents false triggering under transient condi-
tions but still allows the protection mechanism to operate under true overload conditions.
This pin is internally connected to the sync-detect comparator for valley switching. Typically the
4
Sync
voltage of the auxiliary winding is used as Sync input voltage and external resistors and capac-
itor are needed to make time delay to match valley point. The threshold of the internal sync
comparator is 0.7V/0.2V.
This pin is connected to the rectified AC line voltage source. At start-up the internal switch sup-
5 Vstr plies internal bias and charges an external storage capacitor placed between the Vcc pin and
ground. Once the Vcc reaches 12V, the internal switch is opened.
6,7,8
Drain
The drain pins are designed to connect directly to the primary lead of the transformer and are
capable of switching a maximum of 700V. Minimizing the length of the trace connecting these
pins to the transformer will decrease leakage inductance.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
4
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Characteristic
Min.
Max.
Unit
VSTR
VDS
VCC
VFB
VSync
Vstr Pin Voltage
Drain Pin Voltage
Supply Voltage
Feedback Voltage Range
Sync Pin Voltage Range
FSQ0365
500
650
-0.3
-0.3
20
9.0
9.0
12
V
V
V
V
V
IDM Drain Current Pulsed(6)
FSQ0265
FSQ0165
8
A
4
FSQ321/311
1.5
FSQ0365
230
EAS
Single Pulsed Avalanche Energy(7)
FSQ0265
FSQ0165
140
mJ
50
FSQ321/311
10
PD
TJ
TA
TSTG
ESD
Total Power Dissipation
Recommended Operating Junction Temperature
Operating Ambient Temperature
Storage Temperature
Human Body Model(8)
Machine Model(8)
1.5
-40 Internally limited
-40 85
-55 150
CLASS1 C
CLASS B
W
°C
°C
°C
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=51mH, starting TJ=25°C.
8. Meets JEDEC standards JESD22-A114 and JESD22-A115.
Thermal Impedance
Symbol
Parameter
8-DIP(9)
θJA(10)
θJC(11)
θJT(12)
Junction-to-Ambient Thermal Resistance
Junction-to-Case Thermal Resistance
Junction-to-Top Thermal Resistance
Notes:
9. All items are tested with the standards JESD 51-2 and 51-10 (DIP).
10. Free-standing, with no heat-sink, under natural convection.
11. Infinite cooling condition - refer to the SEMI G30-88.
12. Measured on the package top surface.
Value
80
20
35
Unit
°C/W
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
5
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
SenseFET Section
BVDSS
IDSS
Drain Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
FSQ0365
RDS(ON)
Drain-Source On-State
Resistance(13)
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
CSS Input Capacitance
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
COSS Output Capacitance
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
CRSS
Reverse Transfer
Capacitance
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
td(on)
Turn-On Delay Time
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
tr Rise Time
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
td(off)
Turn-Off Delay Time
FSQ0265
FSQ0165
FSQ321/311
FSQ0365
tf Fall Time
FSQ0265
FSQ0165
FSQ321/311
Control Section
tON.MAX1
tON.MAX2
tB1
tB2
Maximum On Time1
Maximum On Time2
Blanking Time1
Blanking Time2
All but Q321
Q321
All but Q321
Q321
Condition
VCC = 0V, ID = 100µA
VDS = 560V
TJ = 25°C, ID = 0.5A
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 25V, f = 1MHz
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
TJ = 25°C
TJ = 25°C
Min. Typ. Max. Unit
650
100
3.5 4.5
5.0 6.0
8.0 10.0
14.0 19.0
315
550
250
162
47
38
25
18
9.0
17.0
10.0
3.8
11.2
20.0
12.0
9.5
34
15
4
19
28.2
55.0
30.0
33.0
32
25
10
42
V
µA
Ω
pF
pF
pF
ns
ns
ns
ns
10.5 12.0 13.5
6.35 7.06 7.77
13.2 15.0 16.8
7.5 8.2
µs
µs
µs
µs
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
6
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Symbol
Parameter
tW Detection Time Window
fS1 Initial Switching Freq.1 All but Q321
fS2 Initial Switching Freq.2
Q321
ΔfS Switching Frequency Variation(14)
IFB Feedback Source Current
DMIN
Minimum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
tS/S1
Internal Soft-Start Time1 All but Q321
tS/S2
Internal Soft-Start Time2
Q321
Burst Mode Section
VBURH
VBURL Burst-Mode Voltage
VBUR(HYS)
Protection Section
FSQ0365
FSQ0265
ILIM Peak Current Limit
FSQ0165
FSQ321
FSQ311
VSD Shutdown Feedback Voltage
IDELAY
tLEB
Shutdown Delay Current
Leading-Edge Blanking Time(14)
VOVP Over-Voltage Protection
tOVP
TSD
Over-Voltage Protection Blanking Time
Thermal Shutdown Temperature(14)
Sync Section
VSH
VSL
tSync
Sync Threshold Voltage
Sync Delay Time(14)(16)
Total Device Section
IOP Oper. Supply Current (Control Part Only)
ISTART Start Current
ICH
VSTR
Start-up Charging Current
Minimum VSTR Supply Voltage
Condition
TJ = 25°C, Vsync = 0V
-25°C < TJ < 85°C
VFB = 0V
VFB = 0V
After turn-on
With free-running frequency
With free-running frequency
TJ = 25°C, tPD = 200ns(15)
TJ = 25°C, di/dt = 240mA/µs
TJ = 25°C, di/dt = 200mA/µs
TJ = 25°C, di/dt = 175mA/µs
TJ = 25°C, di/dt = 125mA/µs
TJ = 25°C, di/dt = 112mA/µs
VCC = 15V
VFB = 5V
VCC = 15V, VFB = 2V
VCC = 15V
VCC = VSTART - 0.1V
(before VCC reaches VSTART)
VCC = 0V, VSTR = min. 40V
Notes:
13. Pulse test: Pulse-Width=300μs, duty=2%
14. Though guaranteed, it is not 100% tested in production.
15. Propagation delay in the control IC.
16. Includes gate turn-on time.
Min. Typ. Max. Unit
3.0 µs
50.5 55.6 61.7 kHz
84.0 89.3 95.2 kHz
±5 ±10 %
700 900 1100 µA
0%
11 12 13 V
789V
15 ms
10 ms
0.45 0.55 0.65
0.25 0.35 0.45
200
V
V
mV
1.32 1.50 1.68
1.06 1.20 1.34
0.8 0.9 1.0
0.53 0.60 0.67
0.53 0.60 0.67
5.5 6.0 6.5
456
200
5.5 6.0 6.5
234
125 140 155
A
V
µA
ns
V
µs
°C
0.55 0.70 0.85
0.14 0.20 0.26
300
V
V
ns
1 3 5 mA
270 360 450 µA
0.65 0.85 1.00 mA
26 V
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
7
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Comparison Between FSDM0x65RNB and FSQ-Series
Function
Operation method
EMI reduction
FSDM0x65RNB
Constant frequency
PWM
Frequency
modulation
Burst-mode operation Fixed burst peak
Protection
FSQ-Series
FSQ-Series Advantages
Valley switching
operation
„ Improved efficiency by valley switching
„ Reduced EMI noise
Valley switching &
inherent frequency
modulation
„ Reduce EMI noise by two ways
„ Improved standby power by valley switch-
ing also in burst-mode
Advanced burst-mode „ Because the current peak during burst
operation is dependent on VFB, it is easier
to solve audible noise
AOCP
„ Improved reliability through precise abnor-
mal over-current protection
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
8
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Performance Characteristics
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 4. Operating Supply Current (IOP) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 5. UVLO Start Threshold Voltage (VSTART)
vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 6. UVLO Stop Threshold Voltage (VSTOP)
vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 7. Start-up Charging Current (ICH) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 8. Initial Switching Frequency (fS) vs. TA
Figure 9. Maximum On Time (tON.MAX) vs. TA
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
9
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25 50 75 100 125
Temperature [°C]
Figure 10. Blanking Time (tB) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 11. Feedback Source Current (IFB) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25 50 75 100 125
Temperature [°C]
Figure 12. Shutdown Delay Current (IDELAY) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 13. Burst-Mode High Threshold Voltage
(Vburh) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25 0 25 50 75 100 125
Temperature [°C]
Figure 14. Burst-Mode Low Threshold Voltage
(Vburl) vs. TA
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
10
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 15. Peak Current Limit (ILIM) vs. TA
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25 50 75 100 125
Temperature [°C]
Figure 16. Sync High Threshold Voltage (VSH) vs. TA
Figure 17. Sync Low Threshold Voltage (VSL) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0 25 50 75 100 125
Temperature [°C]
Figure 18. Shutdown Feedback Voltage (VSD) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-25
0
25 50 75 100 125
Temperature [°C]
Figure 19. Over-Voltage Protection (VOP) vs. TA
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
11
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Functional Description
1. Startup: At startup, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (Ca) connected to the Vcc pin, as
illustrated in Figure 20. When VCC reaches 12V, the FPS
begins switching and the internal high-voltage current
source is disabled. The FPS continues its normal
switching operation and the power is supplied from the
auxiliary transformer winding unless VCC goes below the
stop voltage of 8V.
VDC
Ca
VCC
2
5 Vstr
8V/12V
FSQ0365RN Rev.00
VCC good
ICH
Vref
Internal
Bias
Figure 20. Start-up Circuit
2. Feedback Control: FPS employs current mode
control, as shown in Figure 21. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the RSENSE resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
thus pulling down the feedback voltage and reducing the
duty cycle. This event typically happens when the input
voltage is increased or the output load is decreased.
2.2 Leading Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the Rsense
resistor would lead to incorrect feedback operation in the
current mode PWM control. To counter this effect, the
FPS employs a leading edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(tLEB) after the SenseFET is turned on.
VCC
Idelay
Vref
IFB
VO
VFB
3
OSC
FOD817A
D1 D2
CB 3R
KA431
+
VFB* R
-
SenseFET
Gate
driver
FSQ0365RN Rev. 00
VSD
OLP
Rsense
Figure 21. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a valley
switching technique to minimize the switching noise and
loss. The basic waveforms of the valley switching
converter are shown in Figure 22. To minimize the
MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, as shown in Figure 22. The minimum drain
voltage is indirectly detected by monitoring the VCC
winding voltage, as shown in Figure 22.
Vds
VDC
VRO
VRO
Vsync
tF
Vovp (6V)
2.1 Pulse-by-Pulse Current Limit: Because current
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 21. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
thus clamping VFB*. Therefore, the peak value of the
current through the SenseFET is limited.
0.7V
MOSFET Gate
0.2V
300ns Delay
ON ON
FSQ0365RN Rev.00
Figure 22. Valley Resonant Switching Waveforms
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
12
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

4. Protection Circuits: The FSQ-series has several
self-protective functions, such as Overload Protection
(OLP), Abnormal Over-Current protection (AOCP), Over-
Voltage Protection (OVP), and Thermal Shutdown
(TSD). All the protections are implemented as auto-
restart mode. Once the fault condition is detected,
switching is terminated and the SenseFET remains off.
This causes VCC to fall. When VCC falls down to the
Under-Voltage Lockout (UVLO) stop voltage of 8V, the
protection is reset and start-up circuit charges VCC
capacitor. When the VCC reaches the start voltage of
12V, the FSQ-series resumes normal operation. If the
fault condition is not removed, the SenseFET remains off
and VCC drops to stop voltage again. In this manner, the
auto-restart can alternately enable and disable the
switching of the power SenseFET until the fault condition
is eliminated. Because these protection circuits are fully
integrated into the IC without external components, the
reliability is improved without increasing cost.
VDS
Power
on
Fault
occurs
Fault
removed
voltage. If the output consumes more than this maximum
power, the output voltage (VO) decreases below the set
voltage. This reduces the current through the opto-
coupler LED, which also reduces the opto-coupler
transistor current, thus increasing the feedback voltage
(VFB). If VFB exceeds 2.8V, D1 is blocked and the 5µA
current source starts to charge CB slowly up to VCC. In
this condition, VFB continues increasing until it reaches
6V, when the switching operation is terminated, as
shown in Figure 24. The delay time for shutdown is the
time required to charge CB from 2.8V to 6V with 5µA. A
20 ~ 50ms delay time is typical for most applications.
VFB
6.0V
FSQ0365RN Rev.00
Overload protection
2.8V
t12= CFB*(6.0-2.8)/Idelay
t1
Figure 24. Overload Protection
t2 t
VCC
12V
8V
Normal
FSQ0365RN Rev. 00 operation
Fault
situation
t
Normal
operation
Figure 23. Auto Restart Protection Waveforms
4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding its normal level due to an
unexpected abnormal event. In this situation, the
protection circuit should trigger to protect the SMPS.
However, even when the SMPS is in the normal
operation, the overload protection circuit can be
triggered during the load transition. To avoid this
undesired operation, the overload protection circuit is
designed to trigger only after a specified time to
determine whether it is a transient situation or a true
overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current
through the Sense FET is limited, and therefore the
maximum input power is restricted with a given input
4.2 Abnormal Over-Current Protection (AOCP): When
the secondary rectifier diodes or the transformer pins are
shorted, a steep current with extremely high-di/dt can
flow through the SenseFET during the LEB time. Even
though the FSQ-series has OLP (Overload Protection), it
is not enough to protect the FSQ-series in that abnormal
case, since severe current stress is imposed on the
SenseFET until OLP triggers. The FSQ-series has an
internal AOCP (Abnormal Over-Current Protection)
circuit as shown in Figure 25. When the gate turn-on
signal is applied to the power SenseFET, the AOCP
block is enabled and monitors the current through the
sensing resistor. The voltage across the resistor is
compared with a preset AOCP level. If the sensing
resistor voltage is greater than the AOCP level, the set
signal is applied to the latch, resulting in the shutdown of
the SMPS.
3R
OSC
PWM
LEB
200ns
SQ
RQ
R
Gate
driver
AOCP
FSQ0365RN Rev.00
Rsense
VOCP
1
GND
Figure 25. Abnormal Over-Current Protection
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
13
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

4.3 Over-Voltage Protection (OVP): If the secondary
side feedback circuit malfunctions or a solder defect
causes an opening in the feedback path, the current
through the opto-coupler transistor becomes almost
zero. Then, VFB climbs up in a similar manner to the
overload situation, forcing the preset maximum current
to be supplied to the SMPS until the overload protection
triggers. Because more energy than required is provided
to the output, the output voltage may exceed the rated
voltage before the overload protection triggers, resulting
in the breakdown of the devices in the secondary side.
To prevent this situation, an OVP circuit is employed. In
general, the peak voltage of the sync signal is
proportional to the output voltage and the FSQ-series
uses a sync signal instead of directly monitoring the
output voltage. If the sync signal exceeds 6V, an OVP is
triggered, shutting down the SMPS. To avoid undesired
triggering of OVP during normal operation, the peak
voltage of the sync signal should be designed below 6V.
VO
VOset
VFB
0.55V
0.35V
IDS
VDS
4.4 Thermal Shutdown (TSD): The SenseFET and the
control IC are built in one package. This makes it easy
for the control IC to detect the abnormal over
temperature of the SenseFET. If the temperature
exceeds ~150°C, the thermal shutdown triggers.
FSQ0365RN Rev.00
Switching
Switching
t1 disabled t2 t3 disabled t4
time
Figure 26. Waveforms of Burst Operation
5. Soft-Start: The FPS has an internal soft-start circuit
that increases PWM comparator inverting input voltage
with the SenseFET current slowly after it starts up. The
typical soft-start time is 15ms, The pulse width to the
power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased with the intention of
smoothly establishing the required output voltage. This
mode helps prevent transformer saturation and reduces
stress on the secondary diode during startup.
6. Burst Operation: To minimize power dissipation in
standby mode, the FPS enters burst-mode operation. As
the load decreases, the feedback voltage decreases. As
shown in Figure 26, the device automatically enters
burst-mode when the feedback voltage drops below
VBURL (350mV). At this point, switching stops and the
output voltages start to drop at a rate dependent on
standby current load. This causes the feedback voltage
to rise. Once it passes VBURH (550mV), switching
resumes. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
7. Switching Frequency Limit: To minimize switching
loss and EMI (Electromagnetic Interference), the
MOSFET turns on when the drain voltage reaches its
minimum value in valley switching operation. However,
this causes switching frequency to increases at light load
conditions. As the load decreases, the peak drain current
diminishes and the switching frequency increases. This
results in severe switching losses at light-load condition,
as well as intermittent switching and audible noise.
Because of these problems, the valley switching
converter topology has limitations in a wide range of
applications.
To overcome this problem, FSQ-series employs a
frequency-limit function, as shown in Figures 27 and 28.
Once the SenseFET is turned on, the next turn-on is
prohibited during the blanking time (tB). After the
blanking time, the controller finds the valley within the
detection time window (tW) and turns on the MOSFET, as
shown in Figures 27 and 28 (Cases A, B, and C). If no
valley is found during tW, the internal SenseFET is forced
to turn on at the end of tW (Case D). Therefore, our
devices have a minimum switching frequency of 55kHz
and a maximum switching frequency of 67kHz, as shown
in Figure 28.
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
14
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

tsmax=18μs
IDS
tB=15μs
ts
IDS
tB=15μs
ts
IDS
A
IDS
B
67kHz
59kHz
55kHz
When the resonant period is 2μs
A
BC
Constant
frequency
D
Burst
mode
FSQ0365RN Rev. 00
PO
Figure 28. Switching Frequency Range
IDS
tB=15μs
ts
IDS
C
IDS IDS
tB=15μs
D
tW=3μs
tsmax=18μs
FSQ0365RN Rev. 00
Figure 27. Valley Switching with Limited Frequency
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
15
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Application Circuit of FSQ0365RN
Application FPS Device
DVD Player
Power Supply
FSQ0365RN
Input Voltage
Range
85-265VAC
Rated Output Power
19W
Output Voltage
(Max. Current)
5.1V (1.0A)
3.4V (1.0A)
12V (0.4A)
16V (0.3A)
Features
„ High efficiency ( >77% at universal input)
„ Low standby mode power consumption (<1W at 230VAC input and 0.5W load)
„ Reduce EMI noise through Valley Switching operation
„ Enhanced system reliability through various protection functions
„ Internal soft-start (15ms)
Key Design Notes
„ The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of
OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms).
„ The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input
voltage can be adjusted.
„ The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pul-
sating noises and to improved surge immunity.
1. Schematic
RT101
5D-9
C103
33μF
400V
2
1
BD101
Bridge
3
Diode
4
C102
100nF,275VAC
R105
100k
LF101
40mH
C101
100nF
275VAC
TNR
10D471K
AC IN
F101
FUSE
R102
56k
C105
47nF
50V
C104
10nF
630V
R108
62
D101
1N 4007
IC101
FSQ0365RN
5 Vstr
4
Sync
Drain 8
Drain 7
Drain 6
3 FB
Vcc 2
GND
1
C106 C107
100nF 22μF
SMD 50V
D102
1N 4004
R103
5
R104
12k
ZD101
1N4746A
C110
33pF
50V
T101
EER2828
C209
47pF
1
11
D201
UF4003
C210
2 47pF
L201
C201
470μF
35V
L202
C202
470μF
35V
3
10 D202
C203
C204
UF4003
470μF
470μF
35V 35V
12
L203
6
C205
4
D203
SB360
1000μF
10V
5
9
L204
D204
SB360
C207
1000μF
10V
16V, 0.3A
12V, 0.4A
5.1V, 1A
C206
1000μF
10V
C208
1000μF
10V
3.4V, 1A
C302
3.3nF
8
R201
510
R202
1k
IC202
FOD817A
IC201
KA431
R204 C209
20k100nF
R205
6k
R203
6.2k
FSQ0365RN Rev:00
Figure 29. Demo Circuit of FSQ0365RN
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
16
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

2. Transformer
EER2828
1
Np/2
Np/2 2
3
Na 4
5
12
11
N16V
10N12V
9 N3.4V
8
7
6 N5.1V
6mm
Np/2
N16V
N12V
Na
N5.1V
N3.4V
Np/2
3mm
FSQ0365RN Rev: 00
Figure 30. Transformer Schematic Diagram of FSQ0365RN
3. Winding Specification
No Pin (sf)
Wire
Np/2
32
0.25φ × 1
Insulation: Polyester Tape t = 0.050mm, 2 Layers
N3.4V
98
0.33φ × 2
Insulation: Polyester Tape t = 0.050mm, 2 Layers
N5V 6 9
0.33φ × 1
Insulation: Polyester Tape t = 0.050mm, 2 Layers
Na 4 5
0.25φ × 1
Insulation: Polyester Tape t = 0.050mm, 2 Layers
N12V
10 12
0.33φ × 3
Insulation: Polyester Tape t = 0.050mm, 3 Layers
N16V
11 12
0.33φ × 3
Insulation: Polyester Tape t = 0.050mm, 2 Layers
Np/2
21
0.25φ × 1
Insulation: Polyester Tape t = 0.050mm, 2 Layers
Turns
50
Winding Method
Center Solenoid Winding
4 Center Solenoid Winding
2 Center Solenoid Winding
16 Center Solenoid Winding
14 Center Solenoid Winding
18 Center Solenoid Winding
50 Center Solenoid Winding
4. Electrical Characteristics
Inductance
Leakage
5. Core & Bobbin
„ Core: EER2828 (Ae=86.66mm2)
„ Bobbin: EER2828
Pin
1-3
1-3
Specification
1.4mH ± 10%
25µH Max.
Remarks
100kHz, 1V
Short all other pins
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
17
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

6. Demo Board Part List
Part
R102
R103
R104
R105
R106
R107
R108
R201
R202
R203
R204
R205
C101
C102
C103
C104
C105
C106
C107
C110
C201
C202
C203
C204
C205
C206
C207
C208
C209
Value
Note
Resistor
56kΩ
1W
5Ω 1/2W
12kΩ
1/4W
100kΩ
1/4W
6.2kΩ
1/4W
6.2kΩ
1/4W
62Ω 1W
510Ω
1/4W
1kΩ 1/4W
6.2kΩ
1/4W
20kΩ
1/4W
6kΩ 1/4W
Capacitor
100nF/275VAC
100nF/275VAC
33µF/400V
Box Capacitor
Box Capacitor
Electrolytic Capacitor
10nF/630V
Film Capacitor
47nF/50V
Mono Capacitor
100nF/50V
SMD (1206)
22µF/50V
Electrolytic Capacitor
33pF/50V
Ceramic Capacitor
470µF/35V
Electrolytic Capacitor
470µF/35V
Electrolytic Capacitor
470µF/35V
Electrolytic Capacitor
470µF/35V
Electrolytic Capacitor
1000µF/10V
Electrolytic Capacitor
1000µF/10V
Electrolytic Capacitor
1000µF/10V
Electrolytic Capacitor
1000µF/10V
Electrolytic Capacitor
100nF /50V
Ceramic Capacitor
Part
L201
L202
L203
L204
D101
D102
ZD101
D103
D201
D202
D203
D204
Value
Inductor
10µH
10µH
4.9µH
4.9µH
Diode
IN4007
IN4004
1N4746A
1N4148
UF4003
UF4003
SB360
SB360
Note
IC101
IC201
IC202
Fuse
RT101
BD101
LF101
T101
TNR
IC
FSQ0365RN
FPS™
KA431 (TL431)
Voltage reference
FOD817A
Opto-coupler
Fuse
2A/250V
NTC
5D-9
Bridge Diode
2KBP06M2N257
Bridge Diode
Line Filter
40mH
Transformer
Varistor
10D471K
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
18
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Application Circuit of FSQ311
Application FPS Device
DVD Player
Power Supply
FSQ311
Input Voltage
Range
85-265VAC
Rated Output Power
8W
Output Voltage
(Max. Current)
5.1V (0.9A)
3.3V (0.9A)
12V (0.03A)
16V (0.03A)
Features
„ High efficiency ( >70% at universal input)
„ Low standby mode power consumption (<1W at 230VAC input and 0.5W load)
„ Reduce EMI noise through Valley Switching operation
„ Enhanced system reliability through various protection functions
„ Internal soft-start (15ms)
Key Design Notes
„ The delay time for overload protection is designed to be about 30ms with C107 of 47nF. If faster/slower triggering of
OLP is required, C107 can be changed to a smaller/larger value (eg. 100nF for 60ms).
„ The input voltage of Vsync must be higher than -0.3V. By proper voltage sharing by R106 & R107 resistors, the input
voltage can be adjusted.
„ The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pul-
sating noises and to improved surge immunity.
1. Schematic
F1
FUSE
AC IN
RT1
5D-9
C6
10μF
400V
L2
660μH
C7
10μF
400V
10R02k
C1
4.7nF
1
1R50Sk5
CS5
6.8nF
680V
RS6
DS1
2001N 4007
2
3
C17
47nF
50V
U1
FSQ311
FB1
5 Vstr
8
Drain
Ferritebead
Drain 7
4
Sync
3 Vfb
6
Drain
Vcc 2
C104* C14
100nF 22μF
SMD 50V
R54*
GND
1 1Z.2Rk1
D8
1N 4004
12Rk5
ZD1
1N4746A
C18
33pF
50V
5
6
T1
EE1927
12
D1
UF4003
11
10
D4
UF4003
11
7
D7
SB360
8
9
D9
SB360
8
L1
C3
100μF
35V
C2
100μF
35V
L3
C4
100μF
35V
C5
100μF
35V
L5
C12
680μF
10V
L6
C15
680μF
10V
-12V, 0.03A
12V, 0.03A
C11
680μF
10V
5.1V, 0.9A
3.3V, 0.9A
C16
680μF
10V
* : optional components
51R06
R8
1k
U3
FOD817A
U2
TL431
6R.21k0
R8k12
C19
68nF
6Rk13
Figure 31. Demo Circuit of FSQ311
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
19
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

2. Transformer
Np/2 1
Np/2 2
3
NVCC 5
6
EE1927
12
N-12V
11
10 N12V
9 N3.3V
8
7 N5V
Lp/2(0.2φ)
NVcc
(0.1~0.15φ)
Shield winding
(0.1~0.15φ)
N12V & N-12V
(0.1~0.15φ)
N3.3V
(0.2φ,3parallel)
N5V
(0.2φ,3parallel)
Shield winding
(0.1~0.15φ)
Lp/2(0.2φ)
3mm
3mm
1
2
6
12
888
888
2
3
11 11
5
10
999
777
11
11
Bottom of bobbin
Figure 32. Transformer Schematic Diagram of FSQ311
TAPE 4T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 1T
TAPE 1T
TAPE 1T
TAPE 1T
TAPE 2T
TAPE 1T
3. Winding Specification
No Pin (sf)
Wire
Np/2
32
0.2φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Shield
1 open
0.1φ × 2
Insulation: Polyester Tape t = 0.025mm, 1 Layer
N5V 7 8
0.2φ × 3
Insulation: Polyester Tape t = 0.025mm, 1 Layer
N3.3V
9→8
0.2φ × 3
Insulation: Polyester Tape t = 0.025mm, 1 Layer
N12V
N-12V
10 → 11
11 12
0.1φ × 1
0.1φ × 3
Insulation: Polyester Tape t = 0.025mm, 1 Layer
Shield
1 open
0.1φ × 2
Insulation: Polyester Tape t = 0.025mm, 2 Layers
NVCCV
56
0.1φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Np/2
21
0.2φ × 1
Insulation: Polyester Tape t = 0.025mm, 4 Layers
Turns
111
15
10
30
33
36
111
Winding Method
Solenoid Winding, 2 Layers
Shield winding
Center Solenoid Winding
Center Solenoid Winding
Solenoid Winding
Solenoid Winding
Shield winding
Center Solenoid Winding
Solenoid Winding, 2 Layers
4. Electrical Characteristics
Inductance
Leakage
Pin
1-3
1-3
Specification
2.1mH ± 10%
100µH Max.
Remarks
66kHz, 1V
Short all other pins
5. Core & Bobbin
„ Core: EE1927 (Ae=23.4mm2)
„ Bobbin: EE1927
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
20
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

6. Demo Board Part List
Part
R2
ZR1
R4
R5
R7
R11
RS5
RS6
R6
R8
R12
R10
R13
C6
C7
C17
C104
C14
C18
CS5
C2
C3
C4
C5
C11
C12
C15
C16
C19
C1
Value
Resistor
100kΩ
1.2kΩ
5Ω
12kΩ
6.2kΩ
6.2kΩ
150kΩ
200Ω
510Ω
1kΩ
8kΩ
6.2kΩ
6kΩ
Capacitor
10µF/400V
10µF/400V
47nF/50V
100nF/50V
22µF/50V
33pF/50V
6.8nF/680V
100µF/35V
100µF/35V
100µF/35V
100µF/35V
680µF/10V
680µF/10V
680µF/10V
680µF/10V
68nµF/50V
4.7nF/375VAC
Note
1/4W
1/4W
1/2W
1/4W
1/4W
1/4W
2W
1W
1/4W
1/4W
1/4W
1/4W, 1%
1/4W, 1%
Electrolytic
Electrolytic
Ceramic
SMD(1206)
Electrolytic
Ceramic
Film
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Electrolytic
Ceramic
Ceramic
Part
L2
L1
L3
L5
L6
D2,3,4,5
D8
D10
ZD1
DS1
D1
D4
D7
D9
U1
U2
U3
Fuse
RT1
T1
FB1
Value
Note
Inductor
660µH
4.7µH
4.7µH
4.7µH
4.7µH
Diode
IN4007
IN4004
1N4148
1N4746A
1N4007
UF4003
UF4003
SB360
SB360
IC
FSQ311
FPS™
KA431 (TL431)
Voltage reference
FOD817A
Opto-coupler
Fuse
2A/250V
NTC
5D-9
Transformer
EE1927
Bridge Diode
Ferrite bead
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
21
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Package Dimensions
9.83
9.00
6.67
6.096
5.08 MAX
3.683
3.20
8.255
7.61
7.62
0.33 MIN
(0.56)
2.54
3.60
3.00
0.56
0.355
1.65
1.27
7.62
0.356
0.20
NOTES: UNLESS OTHERWISE SPECIFIED
A) THIS PACKAGE CONFORMS TO
JEDEC MS-001 VARIATION BA
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH, AND TIE BAR EXTRUSIONS.
D) DIMENSIONS AND TOLERANCES PER
ASME Y14.5M-1994
E) DRAWING FILENAME AND REVSION: MKT-N08FREV2.
Figure 33. 8-Lead, Dual In-Line Package(DIP)
9.957
7.87
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
22
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Package Dimensions (Continued)
MKT-MLSOP08ArevA
Figure 34. 8-Lead, LSOP Package
© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
23
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com


Q0165R Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

© 2006 Fairchild Semiconductor Corporation
FSQ0365, FSQ0265, FSQ0165, FSQ321, FSQ311 Rev. 1.0.5
24
www.fairchildsemi.com
Free Datasheet http://www.Datasheet4U.com




Click to Download PDF File for PC





HOME