Fairchild Semiconductor Electronic Components Datasheet



Q0765R

FSQ0765R


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June 2008
FSQ0565R, FSQ0765R
Green-Mode Fairchild Power Switch (FPS™) for
Quasi-Resonant Operation - Low EMI and High Efficiency
Features
„ Optimized for Quasi-Resonant Converter (QRC)
„ Low EMI through Variable Frequency Control and AVS
(Alternating Valley Switching)
„ High-Efficiency through Minimum Voltage Switching
„ Narrow Frequency Variation Range over Wide Load
and Input Voltage Variation
„ Advanced Burst-Mode Operation for Low Standby
Power Consumption
„ Simple Scheme for Sync Voltage Detection
„ Pulse-by-Pulse Current Limit
„ Various Protection functions: Overload Protection
(OLP), Over-Voltage Protection (OVP), Abnormal
Over-Current Protection (AOCP), Internal Thermal
Shutdown (TSD) with Hysteresis, Output Short
Protection (OSP)
„ Under-Voltage Lockout (UVLO) with Hysteresis
„ Internal Start-up Circuit
„ Internal High-Voltage Sense FET (650V)
„ Built-in Soft-Start (17.5ms)
Applications
„ Power Supply for LCD TV and Monitor, VCR, SVR,
STB, and DVD & DVD Recorder
„ Adapter
Related Resourses
Visit: http://www.fairchildsemi.com/apnotes/ for:
„ AN-4134: Design Guidelines for Offline Forward
Converters Using Fairchild Power Switch (FPS)
„ AN-4137: Design Guidelines for Offline Flyback
Converters Using Fairchild Power Switch (FPS)
„ AN-4140: Transformer Design Consideration for
Offline Flyback Converters Using Fairchild Power
Switch (FPS)
„ AN-4141: Troubleshooting and Design Tips for
Fairchild Power Switch (FPS) Flyback Applications
„ AN-4145: Electromagnetic Compatibility for Power
Converters
„ AN-4147: Design Guidelines for RCD Snubber of
Flyback
„ AN-4148: Audible Noise Reduction Techniques for
Fairchild Power Switch Fairchild Power Switch(FPS™)
Applications
„ AN-4150: Design Guidelines for Flyback Converters
Using FSQ-Series Fairchild Power Switch (FPS)
Description
A Quasi-Resonant Converter (QRC) generally shows
lower EMI and higher power conversion efficiency than a
conventional hard-switched converter with a fixed
switching frequency. The FSQ-series is an integrated
Pulse-Width Modulation (PWM) controller and
SenseFET specifically designed for quasi-resonant
operation and Alternating Valley Switching (AVS). The
PWM controller includes an integrated fixed-frequency
oscillator, Under-Voltage Lockout (UVLO), Leading-
Edge Blanking (LEB), optimized gate driver, internal soft-
start, temperature-compensated precise current sources
for a loop compensation, and self-protection circuitry.
Compared with a discrete MOSFET and PWM controller
solution, the FSQ-series can reduce total cost,
component count, size, and weight; while simultaneously
increasing efficiency, productivity, and system reliability.
This device provides a basic platform for cost-effective
designs of quasi-resonant switching flyback converters.
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
www.fairchildsemi.com
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Ordering Information
Product
Number
PKG.(5)
Maximum Output Power(1)
Operating Current RDS(ON)
230VAC±15%(2)
Temp.
Limit
Max.
Adapter(3)
Open
Frame(4)
85-265VAC
Adapter(3)
Open
Frame(4)
Replaces
Devices
FSQ0565R TO-220F-6L -40 to +85°C 3.0A
2.2Ω
70W
80W
41W
60W
FSCM0565R
FSDM0565RB
FSQ0765R TO-220F-6L -40 to +85°C 3.5A
1.6Ω
80W
90W
48W
70W
FSCM0765R
FSDM0765RB
Notes:
1. The junction temperature can limit the maximum output power.
2. 230VAC or 100/115VAC with doubler.
3. Typical continuous power in a non-ventilated enclosed adapter measured at 50°C ambient temperature.
4. Maximum practical continuous power in an open-frame design at 50°C ambient.
5. These parts are RoHS compliant.
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
2
www.fairchildsemi.com
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Application Diagram
AC
IN
Sync
PWM
FB VCC
Vstr Drain
GND
VO
FSQ0765R Rev.00
Figure 1. Typical Flyback Application
Internal Block Diagram
Sync
5
AVS
FB
4
0.35/0.55
VCC
Vref
VBurst
Idelay
IFB
3R
tON < tOSP
after SS
R
Soft-
Start
PWM
Vstr VCC Drain
6 31
OSC
Vref
VCC good
8V/12V
LEB
250ns
SQ
RQ
Gate
driver
VOSP
VSD
VOVP
LPF
TSD
LPF
SQ
RQ
AOCP
VOCP
(1.1V)
2
GND
VCC good
Figure 2. Internal Block Diagram
FSQ0765R Rev.00
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
3
www.fairchildsemi.com
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Pin Configuration
FSQ0765R Rev.00
6. Vstr
5. Sync
4. FB
3. VCC
2. GND
1. Drain
Figure 3. Pin Configuration (Top View)
Pin Definitions
Pin # Name
1 Drain
2 GND
3 VCC
4 FB
5 Sync
6 Vstr
Description
SenseFET drain. High-voltage power SenseFET drain connection.
Ground. This pin is the control ground and the SenseFET source.
Power Supply. This pin is the positive supply input. This pin provides internal operating cur-
rent for both start-up and steady-state operation.
Feedback. This pin is internally connected to the inverting input of the PWM comparator. The
collector of an opto-coupler is typically tied to this pin. For stable operation, a capacitor should
be placed between this pin and GND. If the voltage of this pin reaches 6V, the overload pro-
tection triggers, which shuts down the FPS.
Sync. This pin is internally connected to the sync-detect comparator for quasi-resonant switch-
ing. In normal quasi-resonant operation, the threshold of the sync comparator is 1.2V/1.0V.
Start-up. This pin is connected directly, or through a resistor, to the high-voltage DC link. At
start-up, the internal high-voltage current source supplies internal bias and charges the exter-
nal capacitor connected to the VCC pin. Once VCC reaches 12V, the internal current source is
disabled. It is not recommended to connect Vstr and Drain together.
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
4
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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. TA = 25°C, unless otherwise specified.
Symbol
Parameter
Min.
Max.
Unit
Vstr
VDS
VCC
VFB
VSync
IDM
Vstr Pin Voltage
Drain Pin Voltage
Supply Voltage
Feedback Voltage Range
Sync Pin Voltage
Drain Current Pulsed
FSQ0565R
FSQ0765R
500
650
20
-0.3 13
-0.3 13
11
14.4
V
V
V
V
V
A
A
FSQ0565R TC = 25°C
ID
Continuous Drain Current(6)
FSQ0765R
TC = 100°C
TC = 25°C
TC = 100°C
2.8
A
1.7
3.6
A
2.28
EAS
Single Pulsed Avalanche
Energy(7)
FSQ0565R
FSQ0765R
190 mJ
570 mJ
PD Total Power Dissipation(Tc=25oC)
45 W
TJ Operating Junction Temperature
-40
Internally
limited
°C
TA
TSTG
ESD
Operating Ambient Temperature
Storage Temperature
Electrostatic Discharge Capability, Human Body Model
Electrostatic Discharge Capability, Charged Device Model
-40 +85
-55 +150
2.0
2.0
°C
°C
kV
kV
Notes:
6. Repetitive rating: Pulse width limited by maximum junction temperature.
7. L=14mH, starting TJ=25°C.
Thermal Impedance
TA = 25°C unless otherwise specified.
Symbol
θJA
θJC
Parameter
Junction-to-Ambient Thermal Resistance(8)
Junction-to-Case Thermal Resistance(9)
Notes:
8. Free standing with no heat-sink under natural convection.
9. Infinite cooling condition - refer to the SEMI G30-88.
Package
TO-220F-6L
Value
50
2.8
Unit
°C/W
°C/W
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
5
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Electrical Characteristics
TA = 25°C unless otherwise specified.
Symbol
Parameter
SENSEFET SECTION
BVDSS
IDSS
RDS(ON)
Drain Source Breakdown Voltage
Zero-Gate-Voltage Drain Current
Drain-Source On-State FSQ0565R
Resistance
FSQ0765R
COSS Output Capacitance
FSQ0565R
FSQ0765R
td(on)
Turn-On Delay Time
FSQ0565R
FSQ0765R
tr Rise Time
FSQ0565R
FSQ0765R
td(off)
Turn-Off Delay Time
FSQ0565R
FSQ0765R
tf Fall Time
FSQ0565R
FSQ0765R
CONTROL SECTION
tON.MAX
tB
tW
fS
ΔfS
tAVS
VAVS
Maximum On Time
Blanking Time
Detection Time Window
Initial Switching Frequency
Switching Frequency Variation(11)
AVS Triggering
Threshold(9)
On Time
Feedback
Voltage
tSW Switching Time Variance by AVS(11)
IFB Feedback Source Current
DMIN
Minimum Duty Cycle
VSTART
VSTOP
UVLO Threshold Voltage
tS/S Internal Soft-Start Time
BURST-MODE SECTION
VBURH
VBURL
Hysteresis
Burst-Mode Voltages
Condition
VCC = 0V, ID = 100µA
VDS = 560V
TJ = 25°C, ID = 0.5A
TJ = 25°C, ID = 0.5A
VGS = 0V, VDS = 25V, f = 1MHz
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
VDD = 350V, ID = 25mA
TJ = 25°C
TJ = 25°C, Vsync = 5V
TJ = 25°C, Vsync = 0V
-25°C < TJ < 85°C
at VIN = 240VDC, Lm = 360μH
(AVS triggered when VAVS>spec
& tAVS<spec.)
Sync = 500kHz sine input
VFB = 1.2V, tON = 4.0µs
VFB = 0V
VFB = 0V
After turn-on
With free-running frequency
TJ = 25°C, tPD = 200ns(10)
Min. Typ. Max. Unit
650
300
1.76 2.20
1.3 1.6
78
125
22
22
52
70
95
105
50
65
V
µA
Ω
pF
ns
ns
ns
ns
8.8 10.0 11.2 µs
13.5 15.0 16.5 µs
6.0 µs
59.6 66.7 75.8 kHz
±5 ±10 %
4.0 µs
1.2 V
13.5 20.5 µs
700 900 1100 µA
0%
11 12 13 V
789V
17.5 ms
0.45 0.55 0.65
0.25 0.35 0.45
200
V
V
mV
Continued on the following page...
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
6
www.fairchildsemi.com
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Electrical Characteristics (Continued)
TA = 25°C unless otherwise specified.
Symbol
Parameter
Condition
PROTECTION SECTION
ILIMIT
VSD
IDELAY
tLEB
tOSP
VOSP
tOSP_FB
TSD
Hys
Peak Current
Limit
FSQ0565R
FSQ0765R
Shutdown Feedback Voltage
Shutdown Delay Current
Leading-Edge Blanking Time(11)
TJ = 25°C, di/dt = 370mA/µs
TJ = 25°C, di/dt = 460mA/µs
VCC = 15V
VFB = 5V
Output Short
Protection(9)
Threshold Time
Threshold Feedback
Voltage
Feedback Blanking Time
TJ = 25°C
OSP triggered when tON<tOSP ,
VFB>VOSP & lasts longer than
tOSP_FB
Thermal
Shutdown Temperature
Shutdown(9) Hysteresis
SYNC SECTION
VSH1
VSL1
tsync
VSH2
VSL2
Sync Threshold Voltage 1
Sync Delay Time(11)(12)
Sync Threshold Voltage 2
VCLAMP Low Clamp Voltage
VOVP
tOVP
Over-Voltage Threshold Voltage
Protection Blanking Time(11)
TOTAL DEVICE SECTION
VCC = 15V, VFB = 2V
VCC = 15V, VFB = 2V
ISYNC_MAX = 800µA
ISYNC_MIN = 50µA
VCC = 15V, VFB = 2V
IOP
Operating Supply Current
(Control Part Only)
VCC = 13V
ISTART
ICH
Start Current
Start-up Charging Current
VCC = 10V
(before VCC reaches VSTART)
VCC = 0V, VSTR = mininmum
50V
VSTR Minimum VSTR Supply Voltage
Min. Typ. Max. Unit
2.64 3.00 3.36
3.08 3.50 3.92
5.5 6.0 6.5
456
250
1.2 1.4
A
V
µA
ns
µs
1.8 2.0
V
2 2.5 3.0
125 140 155
60
µs
°C
1.0 1.2 1.4
0.8 1.0 1.2
230
4.3 4.7 5.1
4.0 4.4 4.8
0.0 0.4 0.8
7.4 8 9.6
1.0 1.7 2.4
V
ns
V
V
V
µs
1 3 5 mA
350 450 550 µA
0.65 0.85 1.00 mA
26 V
Notes:
10. Propagation delay in the control IC.
11. Guaranteed by design, but not tested in production.
12. Includes gate turn-on time.
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
7
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Comparison Between FSDM0x65RNB and FSQ-Series
Function
Operation Method
EMI Reduction
Hybrid Control
Burst-Mode
Operation
Strong Protections
TSD
FSDM0x65RE
Constant
Frequency PWM
Frequency
Modulation
Burst-Mode
Operation
OLP, OVP
145°C without
Hysteresis
FSQ-Series
FSQ-Series Advantages
„ Improved efficiency by valley switching
Quasi-Resonant
Operation
„ Reduced EMI noise
„ Reduced components to detect valley point
„ Valley Switching
Reduce EMI Noise „ Inherent Frequency Modulation
„ Alternate Valley Switching
CCM or AVS
Based on Load „ Improves efficiency by introducing hybrid control
and Input Condition
Advanced
Burst-Mode
Operation
„ Improved standby power by AVS in burst-mode
OLP, OVP,
AOCP, OSP
„ Improved reliability through precise AOCP
„ Improved reliability through precise OSP
140°C with 60°C „ Stable and reliable TSD operation
Hysteresis „ Converter temperature range
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
8
www.fairchildsemi.com
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Typical Performance Characteristics
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 4. Operating Supply Current (IOP) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 5. UVLO Start Threshold Voltage
(VSTART) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 6. UVLO Stop Threshold Voltage
(VSTOP) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Figure 7. Start-up Charging Current (ICH) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 8. Initial Switching Frequency (fS) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 9. Maximum On Time (tON.MAX) vs. TA
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
9
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Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 10. Blanking Time (tB) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 11. Feedback Source Current (IFB) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 12. Shutdown Delay Current (IDELAY) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 13. Burst-Mode High Threshold Voltage
(Vburh) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 14. Burst-Mode Low Threshold Voltage
(Vburl) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 15. Peak Current Limit (ILIM) vs. TA
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
10
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Typical Performance Characteristics (Continued)
These characteristic graphs are normalized at TA= 25°C.
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 16. Sync High Threshold Voltage 1
(VSH1) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 17. Sync Low Threshold Voltage 1
(VSL1) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 18. Shutdown Feedback Voltage (VSD) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 19. Over-Voltage Protection (VOV) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20
0 20 40 60
Temperature [°C]
80 100 120
Figure 20. Sync High Threshold Voltage 2
(VSH2) vs. TA
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40 -20 0 20 40 60 80 100 120
Temperature [°C]
Figure 21. Sync Low Threshold Voltage 2
(VSL2) vs. TA
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
11
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Functional Description
1. Start-up: At start-up, an internal high-voltage current
source supplies the internal bias and charges the
external capacitor (Ca) connected to the VCC pin, as
illustrated in Figure 22. When VCC reaches 12V, the
FPS™ begins switching and the internal high-voltage
current source is disabled. The FPS continues its normal
switching operation and the power is supplied from the
auxiliary transformer winding unless VCC goes below the
stop voltage of 8V.
VDC
Ca
VCC
3
6 Vstr
8V/12V
FSQ0765R Rev.00
VCC good
ICH
Vref
Internal
Bias
Figure 22. Start-up Circuit
2. Feedback Control: FPS employs current-mode
control, as shown in Figure 23. An opto-coupler (such as
the FOD817A) and shunt regulator (such as the KA431)
are typically used to implement the feedback network.
Comparing the feedback voltage with the voltage across
the Rsense resistor makes it possible to control the
switching duty cycle. When the reference pin voltage of
the shunt regulator exceeds the internal reference
voltage of 2.5V, the opto-coupler LED current increases,
pulling down the feedback voltage and reducing the duty
cycle. This typically happens when the input voltage is
increased or the output load is decreased.
2.1 Pulse-by-Pulse Current Limit: Because current-
mode control is employed, the peak current through the
SenseFET is limited by the inverting input of PWM
comparator (VFB*), as shown in Figure 23. Assuming
that the 0.9mA current source flows only through the
internal resistor (3R + R = 2.8k), the cathode voltage of
diode D2 is about 2.5V. Since D1 is blocked when the
feedback voltage (VFB) exceeds 2.5V, the maximum
voltage of the cathode of D2 is clamped at this voltage,
clamping VFB*. Therefore, the peak value of the current
through the SenseFET is limited.
2.2 Leading-Edge Blanking (LEB): At the instant the
internal SenseFET is turned on, a high-current spike
usually occurs through the SenseFET, caused by
primary-side capacitance and secondary-side rectifier
reverse recovery. Excessive voltage across the Rsense
resistor would lead to incorrect feedback operation in the
current-mode PWM control. To counter this effect, the
FPS employs a leading-edge blanking (LEB) circuit. This
circuit inhibits the PWM comparator for a short time
(tLEB) after the SenseFET is turned on.
VCC
Idelay
Vref
IFB
VO
VFB
4
OSC
FOD817A
D1 D2
CB 3R
KA431
+
VFB* R
-
SenseFET
Gate
driver
FSQ0765R Rev. 00
VSD
OLP
Rsense
Figure 23. Pulse-Width-Modulation (PWM) Circuit
3. Synchronization: The FSQ-series employs a quasi-
resonant switching technique to minimize the switching
noise and loss. The basic waveforms of the quasi-
resonant converter are shown in Figure 24. To minimize
the MOSFET's switching loss, the MOSFET should be
turned on when the drain voltage reaches its minimum
value, which is indirectly detected by monitoring the VCC
winding voltage, as shown in Figure 24.
Vds
VDC
VRO
VRO
Vsync
tF
Vovp (8V)
1.2V
MOSFET Gate
1.0V
230ns Delay
ON ON
FSQ0765R Rev.00
Figure 24. Quasi-Resonant Switching Waveforms
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
12
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The switching frequency is the combination of blank time
(tB) and detection time window (tW). In case of a heavy
load, the sync voltage remains flat after tB and waits for
valley detection during tW. This leads to a low switching
frequency not suitable for heavy loads. To correct this
drawback, additional timing is used. The timing
conditions are described in Figures 25, 26, and 27. When
the Vsync remains flat higher than 4.4V at the end of tB
that is tX, the next switching cycle starts after internal
delay time from tX. In the second case, the next switching
occurs on the valley when the Vsync goes below 4.4V
within tB. Once Vsync detects the first valley within tB, the
other switching cycle follows classical QRC operation.
tB=15μs
tX
tB=15μs
tX
IDS IDS
VDS
ingnore
Vsync
4.4V
1.2V
1.0V
internal delay
FSQ0765R Rev. 00
Figure 27. After Vsync Finds First Valley
IDS
VDS
IDS
Vsync
4.4V
1.2V
1.0V
internal delay
FSQ0765R Rev. 00
Figure 25. Vsync > 4.4V at tX
tB=15μs
tX
IDS IDS
4. Protection Circuits: The FSQ-series has several
self-protective functions, such as Overload Protection
(OLP), Abnormal Over-Current Protection (AOCP),
Over-Voltage Protection (OVP), and Thermal Shutdown
(TSD). All the protections are implemented as auto-
restart mode. Once the fault condition is detected,
switching is terminated and the SenseFET remains off.
This causes VCC to fall. When VCC falls down to the
Under-Voltage Lockout (UVLO) stop voltage of 8V, the
protection is reset and the start-up circuit charges the
VCC capacitor. When the VCC reaches the start voltage
of 12V, normal operation resumes. If the fault condition is
not removed, the SenseFET remains off and VCC drops
to stop voltage again. In this manner, the auto-restart can
alternately enable and disable the switching of the power
SenseFET until the fault condition is eliminated.
Because these protection circuits are fully integrated into
the IC without external components, the reliability is
improved without increasing cost.
VDS
Power
on
Fault
occurs
Fault
removed
VDS
Vsync
4.4V
1.2V
1.0V
internal delay
FSQ0765R Rev. 00
Figure 26. Vsync < 4.4V at tX
VCC
12V
8V
Normal
Fault
FSQ0765R Rev. 00 operation situation
t
Normal
operation
Figure 28. Auto Restart Protection Waveforms
© 2008 Fairchild Semiconductor Corporation
FSQ0565R, FSQ0765R Rev. 1.0.1
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4.1 Overload Protection (OLP): Overload is defined as
the load current exceeding its normal level due to an
unexpected abnormal event. In this situation, the
protection circuit should trigger to protect the SMPS.
However, even when the SMPS is in the normal
operation, the overload protection circuit can be
triggered during the load transition. To avoid this
undesired operation, the overload protection circuit is
designed to trigger only after a specified time to
determine whether it is a transient situation or a true
overload situation. Because of the pulse-by-pulse
current limit capability, the maximum peak current
through the SenseFET is limited, and therefore the
maximum input power is restricted with a given input
voltage. If the output consumes more than this maximum
power, the output voltage (VO) decreases below the set
voltage. This reduces the current through the opto-
coupler LED, which also reduces the opto-coupler
transistor current, thus increasing the feedback voltage
(VFB). If VFB exceeds 2.5V, D1 is blocked and the 5µA
current source starts to charge CB slowly up to VCC. In
this condition, VFB continues increasing until it reaches
6V, when the switching operation is terminated, as
shown in Figure 29. The delay time for shutdown is the
time required to charge CFB from 2.5V to 6V with 5µA. A
20 ~ 50ms delay time is typical for most applications.
VFB
6.0V
FSQ0765R Rev.00
Overload protection
3R
OSC
PWM
LEB
250ns
SQ
RQ
R
Gate
driver
AOCP
FSQ0765R Rev.00
Rsense
VOCP
2
GND
Figure 30. Abnormal Over-Current Protection
4.3 Output-Short Protection (OSP): If the output is
shorted, steep current with extremely high di/dt can flow
through the SenseFET during the LEB time. Such a
steep current brings high voltage stress on drain of
SenseFET when turned off. To protect the device from
such an abnormal condition, OSP is included in the FSQ-
series. It is comprised of detecting VFB and SenseFET
turn-on time. When the VFB is higher than 2V and the
SenseFET turn-on time is lower than 1.2µs, the FPS
recognizes this condition as an abnormal error and shuts
down PWM switching until VCC reaches Vstart again. An
abnormal condition output short is shown in Figure 31.
MOSFET
Drain
Current
Rectifier
Diode Current
Turn-off delay
ILIM
VFB
2.5V
t12= CFB*(6.0-2.5)/Idelay
t1
Figure 29. Overload Protection
t2 t
4.2 Abnormal Over-Current Protection (AOCP): When
the secondary rectifier diodes or the transformer pins are
shorted, a steep current with extremely high di/dt can
flow through the SenseFET during the LEB time. Even
though the FSQ-series has overload protection, it is not
enough to protect the FSQ-series in that abnormal case,
since severe current stress is imposed on the SenseFET
until OLP triggers. The FSQ-series has an internal
AOCP circuit shown in Figure 30. When the gate turn-on
signal is applied to the power SenseFET, the AOCP
block is enabled and monitors the current through the
sensing resistor. The voltage across the resistor is
compared with a preset AOCP level. If the sensing
resistor voltage is greater than the AOCP level, the set
signal is applied to the latch, resulting in the shutdown of
the SMPS.
0
Minimum turn-on time
D
Vo 1.2us
output short occurs
0
Io
FSQ0765R Rev. 00
0
Figure 31. Output Short Waveforms
4.4 Over-Voltage Protection (OVP): If the secondary-
side feedback circuit malfunctions or a solder defect
causes an opening in the feedback path, the current
through the opto-coupler transistor becomes almost
zero. Then, VFB climbs up in a similar manner to the
overload situation, forcing the preset maximum current
to be supplied to the SMPS until the overload protection
triggers. Because more energy than required is provided
to the output, the output voltage may exceed the rated
voltage before the overload protection triggers, resulting
in the breakdown of the devices in the secondary side.
To prevent this situation, an OVP circuit is employed. In
general, the peak voltage of the sync signal is
proportional to the output voltage and the FSQ-series
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uses a sync signal instead of directly monitoring the
output voltage. If the sync signal exceeds 8V, an OVP is
triggered, shutting down the SMPS. To avoid undesired
triggering of OVP during normal operation, there are 2
points to be considered which is depicted in Figure 32.
One is the making the peak voltage of the sync signal
should be designed below 6V and the other is that be
sure to make the spike of sync pin as los as possible not
to get longer than tOVP by decreasing the leakage
inductance shown at VCC winding coil.
VVcc_coil &VCC
FSQ0765R Rev.00
Absolue max VCC(20V)
VCC
VVcc_coil
6. Burst Operation: To minimize power dissipation in
standby mode, the FPS enters burst-mode operation. As
the load decreases, the feedback voltage decreases. As
shown in Figure 33, the device automatically enters
burst-mode when the feedback voltage drops below
VBURL (350mV). At this point, switching stops and the
output voltages start to drop at a rate dependent on
standby current load. This causes the feedback voltage
to rise. Once it passes VBURH (550mV), switching
resumes. The feedback voltage then falls and the
process repeats. Burst-mode operation alternately
enables and disables switching of the power SenseFET,
thereby reducing switching loss in standby mode.
VO
VOset
Vsync
Improper OVP triggering
VOVP (8V)
tOVP VSH2(4.8V)
VDC
Npri
NVcc
tOVP
VFB
0.55V
0.35V
IDS
VCLAMP
Figure 32. OVP Triggering
VDS
4.5 Thermal Shutdown with Hysteresis (TSD): The
SenseFET and the control IC are built in one package.
This makes it easy for the control IC to detect the
abnormally high temperature of the SenseFET. If the
temperature exceeds approximately 140°C, the thermal
shutdown triggers IC shutdown. The IC recovers its
operation when the junction temperature decreases
60°C from TSD temperature and VCC reaches start-up
voltage (Vstart).
5. Soft-Start: The FPS has an internal soft-start circuit
that increases PWM comparator inverting input voltage
with the SenseFET current slowly after it starts up. The
typical soft-start time is 17.5ms. The pulse width to the
power switching device is progressively increased to
establish the correct working conditions for transformers,
inductors, and capacitors. The voltage on the output
capacitors is progressively increased with the intention of
smoothly establishing the required output voltage. This
mode helps prevent transformer saturation and reduces
stress on the secondary diode during start-up.
FSQ0765R Rev.00
Switching
Switching
t1 disabled t2 t3 disabled t4
time
Figure 33. Waveforms of Burst Operation
7. Switching Frequency Limit: To minimize switching
loss and Electromagnetic Interference (EMI), the
MOSFET turns on when the drain voltage reaches its
minimum value in quasi-resonant operation. However,
this causes switching frequency to increases at light load
conditions. As the load decreases or input voltage
increases, the peak drain current diminishes and the
switching frequency increases. This results in severe
switching losses at light-load condition, as well as
intermittent switching and audible noise. These problems
create limitations for the quasi-resonant converter
topology in a wide range of applications.
To overcome these problems, FSQ-series employs a
frequency-limit function, as shown in Figures 34 and 35.
Once the SenseFET is turned on, the next turn-on is
prohibited during the blanking time (tB). After the
blanking time, the controller finds the valley within the
detection time window (tW) and turns on the MOSFET, as
shown in Figures 34 and Figure 35 (Cases A, B, and C).
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If no valley is found during tW, the internal SenseFET is
forced to turn on at the end of tW (Case D). Therefore,
the devices have a minimum switching frequency of
48kHz and a maximum switching frequency of 67kHz.
tsmax=21μs
IDS
IDS
tB=15μs
ts
IDS
tB=15μs
ts
A
IDS
B
IDS
tB=15μs
ts
IDS
C
8. AVS (Alternating Valley Switching): Due to the
quasi-resonant operation with limited frequency, the
switching frequency varies depending on input voltage,
load transition, and so on. At high input voltage, the
switching on time is relatively small compared to low
input voltage. The input voltage variance is small and the
switching frequency modulation width becomes small. To
improve the EMI performance, AVS is enabled when
input voltage is high and the switching on time is small.
Internally, quasi-resonant operation is divided into two
categories; one is first valley switching and the other is
second-valley switching after blanking time. In AVS, two
successive occurrences of first-valley switching and the
other two successive occurrences of second-valley
switching is alternatively selected to maximize frequency
modulation. As depicted in Figure 35, the switching
frequency hops when the input voltage is high. The
internal timing diagram of AVS is described in Figure 36.
fs
67kHz
59kHz
53kHz
48kHz
Assume the resonant period is 2μs
AVS trigger point
Constant
frequency
CCM
Variable frequency within limited range
DCM
AVS region
1
15μs
1
17μs
1
19μs
1
21μs
IDS
tB=15μs
IDS
D
tW=6μs
DC
FSQ0765 R Rev.00
B
A
Vin
Figure 35. Switching Frequency Range
tsmax=21μs
FSQ0765R Rev. 00
Figure 34. QRC Operation with Limited Frequency
Vgate
GateX2
Vgate continued 2 pulses
1st valley switching
Vgate continued another 2 pulses
2nd valley switching
Vgate continued 2 pulses
1st valley switching
One-shot
fixed
fixed
fixed
AVS triggering 1st or 2nd is depend on GateX2 de-triggering triggering
fixed
fixed
fixed
1st or 2nd is dependent on GateX2
VDS tB
tB tB
tB tB tB
GateX2: Counting Vgate every 2 pulses independent on other signals.
FSQ0765R Rev. 00
1st valley- 2nd valley frequency modulation.
Modulation frequency is approximately 17kHz.
Figure 36. Alternating Valley Switching (AVS)
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PCB Layout Guide
Due to the combined scheme, FPS shows better noise
immunity than conventional PWM controller and
MOSFET discrete solution. Further more, internal drain
current sense eliminates the possibility of noise
generation caused by a sensing resistor. There are some
recommendations for PCB layout to enhance noise
immunity and suppress natural noise inevitable in power-
handling components.
There are typically two grounds in the conventional
SMPS: power ground and signal ground. The power
ground is the ground for primary input voltage and
power, while the signal ground is ground for PWM
controller. In FPS, those two grounds share the same
pin, GND. Normally the separate grounds do not share
the same trace and meet only at one point, the GND pin.
More, wider patterns for both grounds are good for large
currents by decreasing resistance.
Capacitors at the VCC and FB pins should be as close
as possible to the corresponding pins to avoid noise from
the switching device. Sometimes Mylar® or ceramic
capacitors with electrolytic for VCC is better for smooth
operation. The ground of these capacitors needs to
connect to the signal ground (not power ground).
The cathode of the snubber diode should be close to the
drain pin to minimize stray inductance. The Y-capacitor
between primary and secondary should be directly
connected to the power ground of DC link to maximize
surge immunity.
Because the voltage range of feedback and sync line is
small, it is affected by the noise of the drain pin. Those
traces should not draw across or close to the drain line.
When the heat sink is connected to the ground, it should
be connected to the power ground. If possible, avoid
using jumper wires for power ground and drain.
Figure 37. Recommended PCB Layout
Mylar® is a registered trademark of DuPont Teijin Films.
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Typical Application Circuit
Application
LCD Monitor
Power Supply
FPS™ Device
FSQ0565R
Input Voltage
Range
85-265VAC
Rated Output Power
46W
Output Voltage
(Maximum Current)
5.1V (2.0A)
12V (3.0A)
Features
„ Average efficiency of 25%, 50%, 75%, and 100% load conditions is higher than 80% at universal input
„ Low standby mode power consumption (<1W at 230VAC input and 0.5W load)
„ Reduce EMI noise through valley switching operation
„ Enhanced system reliability through various protection functions
„ Internal soft-start (17.5ms)
Key Design Notes
„ The delay time for overload protection is designed to be about 23ms with C105 of 33nF. If faster/slower triggering of
OLP is required, C105 can be changed to a smaller/larger value (e.g. 100nF for 70ms).
„ The input voltage of VSync must be between 4.7V and 8V just after MOSFET turn-off to guarantee hybrid control and
to avoid OVP triggering during normal operation.
„ The SMD-type 100nF capacitor must be placed as close as possible to VCC pin to avoid malfunction by abrupt pul-
sating noises and to improve surge immunity.
1. Schematic
FSQ0765R Rev.00
BD101
2KBP06M3N257
2
1
4
C102
150nF
275VAC
LF101
34mH
R102
68k
C103
100μF
400V
3
C105
33nF
100V
R103
33k
1W
C104
4.7nF
630V
R104
20
0.5W
D101
1N 4007
FSQ0565R
6
Vstr
Drain 1
5
Sync
R105 C106 C107
100100nF 47μF
4 Vfb
Vcc 0.5W SMD 50V
3
GND
D102
2 UF 4004 R107
18k
ZD101
1N4745A
R108
12k
R101
2M
1W
RT1
5D-9
C101
150nF
275VAC
F1
FUSE
250V
2A
Optional components
T1 D201
EER3016 MBRF10H100
1 10
C201
1000μF
2 8 25V
3
L201
5μH
C202
1000μF
25V
12V, 3A
D202
MBRF1060
47
C203
1000μF
6 10V
5
C301
4.7nF
1kV
L202
5μH
C204
1000μF
10V
5V, 2A
R201
1k
IC301
FOD817A
R202
1.2k
R203
1.2k
C205
47nF
IC201
KA431
R204
4k
R205
4k
Figure 38. Demo Circuit of FSQ0565R
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2. Transformer
FSQ0765R Rev.00 EER3016
1
10 N12V/2
2
Np/2
Np/2 3
Na 4
5
9 N12V/2
8
7 N5V
6
FSQ0765R Rev.00
Lp/2
(0.4φ)
L12V/2
(T2IpWar0a.ll5eφl),
LVcc(0.2φ)
L5V
(T2IpWar0a.ll5eφl),
L12V/2
(T2IpWar0a.ll5eφl),
Lp/2
(0.4φ)
1
2
99
4
77
8
5
6
8
6
10 10
2
3
Bottom of bobbin
99
Figure 39. Transformer Schematic Diagram of FSQ0565R
TAPE 4T
TAPE 1T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 2T
TAPE 1T
3. Winding Specification
Position
Top
Bottom
No Pin (sf)
Wire
Insulation: Polyester Tape t = 0.025mm, 4 Layers
Np/2
2→1
0.4φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N12V/2
98
0.5φ × 2(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Na 4 5 0.15φ × 1
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N5V
76
0.5φ × 2(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
N12V/2
10 9
0.5φ × 2(TIW)
Insulation: Polyester Tape t = 0.025mm, 2 Layers
Np/2
32
0.4φ × 1
Turns
Winding Method
20 2-Layer Solenoid Winding
4 Center Solenoid Winding
10 Center Solenoid Winding
4 Center Solenoid Winding
5 Center Solenoid Winding
32 2-Layer Solenoid Winding
4. Electrical Characteristics
Inductance
Leakage
Pin Specification
Remarks
1-3
360µH ± 10%
100kHz, 1V
1-3
15µH Maximum
Short all other pins
5. Core & Bobbin
„ Core: EER3016 (Ae=109.7mm2)
„ Bobbin: EER3016
© 2008 Fairchild Semiconductor Corporation
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19
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6. Demo Board Part List
Part
R101
R102
R103
R104
R105
R107
R108
R201
R202
R203
R204
R205
C101
C102
C103
C104
C105
C106
C107
C201
C202
C203
C204
Value
Resistor
2MΩ
68kΩ
33kΩ
20Ω
100Ω
Note
1W
1/2W
1W
1W
optional, 1/4W
18kΩ
1/4W
12kΩ
1/4W
1kΩ 1/4W
1.2kΩ
1/4W
1.2kΩ
1/4W
5.2kΩ
1/4W
4.7kΩ
1/4W
Capacitor
150nF/275VAC
150nF/275VAC
100µF/400V
Box Capacitor
Box Capacitor
Electrolytic Capacitor
4.7nF/630V
Film Capacitor
33nF/50V
Ceramic Capacitor
100nF/50V
SMD (1206)
47µF/50V
Electrolytic Capacitor
1000µF/25V
Low ESR Electrolytic
Capacitor
1000µF/25V
Low ESR Electrolytic
Capacitor
1000µF/10V
Low ESR Electrolytic
Capacitor
1000µF/10V
Low ESR Electrolytic
Capacitor
Part
C205
C301
L201
L202
D101
D102
ZD101
D201
D202
IC101
IC201
IC202
Fuse
RT101
BD101
Value
Note
47nF/50V
Ceramic Capacitor
4.7nF/1kV
Ceramic Capacitor
Inductor
5µH 5A Rating
5µH 5A Rating
Diode
IN4007
1A, 1000V General-Purpose
Rectifier
UF4004
1A, 400V Ultrafast Rectifier
1N4745A
1W 16V Zener Diode
(optional)
MBRF10H100 10A,100V Schottky Rectifier
MBRF1060
10A,60V Schottky Rectifier
IC
FSQ0565R
FPS™
KA431 (TL431)
Voltage Reference
FOD817A
Opto-Coupler
Fuse
2A/250V
NTC
5D-9
Bridge Diode
2KBP06M2N257
Bridge Diode
Line Filter
LF101
34mH
Transformer
T1 EER3016
Ae=109.7mm2
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20
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Package Dimensions
TO-220F-6L (Forming)
MKT-TO220A06revB
Figure 40. 6-Lead, TO-220 Package
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21
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