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2N3906
General Purpose
Transistors
PNP Silicon
Features
PbFree Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Total Device Dissipation @ TA = 25°C
Derate above 25°C
VCEO
VCBO
VEBO
IC
PD
40 Vdc
40 Vdc
5.0 Vdc
200 mAdc
625 mW
5.0 mW/°C
Total Power Dissipation @ TA = 60°C PD 250 mW
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
1.5 W
12 mW/°C
Operating and Storage Junction
Temperature Range
TJ, Tstg 55 to +150
°C
THERMAL CHARACTERISTICS (Note 1)
Characteristic
Symbol
Max
Unit
Thermal Resistance, JunctiontoAmbient RqJA 200 °C/W
Thermal Resistance, JunctiontoCase
RqJC
83.3
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Indicates Data in addition to JEDEC Requirements.
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COLLECTOR
3
2
BASE
1
EMITTER
TO92
CASE 29
STYLE 1
123
STRAIGHT LEAD
BULK PACK
12 3
BENT LEAD
TAPE & REEL
AMMO PACK
MARKING DIAGRAM
2N
3906
ALYWG
G
A = Assembly Location
L = Wafer Lot
Y = Year
W = Work Week
G = PbFree Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
© Semiconductor Components Industries, LLC, 2010
February, 2010 Rev. 4
1
Publication Order Number:
2N3906/D


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2N3906
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector Emitter Breakdown Voltage (Note 2)
Collector Base Breakdown Voltage
Emitter Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
ON CHARACTERISTICS (Note 2)
(IC = 1.0 mAdc, IB = 0)
(IC = 10 mAdc, IE = 0)
(IE = 10 mAdc, IC = 0)
(VCE = 30 Vdc, VEB = 3.0 Vdc)
(VCE = 30 Vdc, VEB = 3.0 Vdc)
DC Current Gain
Collector Emitter Saturation Voltage
(IC = 0.1 mAdc, VCE = 1.0 Vdc)
(IC = 1.0 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, VCE = 1.0 Vdc)
(IC = 50 mAdc, VCE = 1.0 Vdc)
(IC = 100 mAdc, VCE = 1.0 Vdc)
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc
Base Emitter Saturation Voltage
(IC = 10 mAdc, IB = 1.0 mAdc)
(IC = 50 mAdc, IB = 5.0 mAdc)
SMALLSIGNAL CHARACTERISTICS
Current Gain Bandwidth Product
(IC = 10 mAdc, VCE = 20 Vdc, f = 100 MHz)
Output Capacitance
(VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, f = 1.0 MHz)
Input Impedance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Voltage Feedback Ratio
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
SmallSignal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Output Admittance
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1.0 kHz)
Noise Figure
(IC = 100 mAdc, VCE = 5.0 Vdc, RS = 1.0 kW, f = 1.0 kHz)
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
(VCC = 3.0 Vdc, VBE = 0.5 Vdc,
IC = 10 mAdc, IB1 = 1.0 mAdc)
Storage Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
Fall Time
(VCC = 3.0 Vdc, IC = 10 mAdc, IB1 = IB2 = 1.0 mAdc)
2. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2%.
Symbol
V(BR)CEO
V(BR)CBO
V(BR)EBO
IBL
ICEX
hFE
VCE(sat)
VBE(sat)
fT
Cobo
Cibo
hie
hre
hfe
hoe
NF
td
tr
ts
tf
Min
40
40
5.0
60
80
100
60
30
0.65
250
2.0
0.1
100
3.0
Max Unit
Vdc
Vdc
Vdc
50 nAdc
50 nAdc
−−
300
0.25 Vdc
0.4
0.85 Vdc
0.95
MHz
4.5 pF
10 pF
12 kW
10 X 104
400
60 mmhos
4.0 dB
35 ns
35 ns
225 ns
75 ns
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2N3906
ORDERING INFORMATION
Device
Package
Shipping
2N3906
TO92
5000 Units / Bulk
2N3906G
TO92
(PbFree)
5000 Units / Bulk
2N3906RL1
TO92
2000 / Tape & Reel
2N3906RL1G
TO92
(PbFree)
2000 / Tape & Reel
2N3906RLRA
TO92
2000 / Tape & Reel
2N3906RLRAG
TO92
(PbFree)
2000 / Tape & Reel
2N3906RLRM
TO92
2000 / Tape & Ammo Box
2N3906RLRMG
TO92
(PbFree)
2000 / Tape & Ammo Box
2N3906RLRP
TO92
2000 / Tape & Ammo Box
2N3906RLRPG
TO92
(PbFree)
2000 / Tape & Ammo Box
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3V
+0.5 V
< 1 ns
10 k
275
10.6 V
300 ns
DUTY CYCLE = 2%
CS < 4 pF*
* Total shunt capacitance of test jig and connectors
Figure 1. Delay and Rise Time Equivalent Test Circuit
+9.1 V
< 1 ns
3V
275
10 k
0
1N916
CS < 4 pF*
10 < t1 < 500 ms
DUTY CYCLE = 2%
t1
10.9 V
* Total shunt capacitance of test jig and connectors
Figure 2. Storage and Fall Time Equivalent Test Circuit
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2N3906
TYPICAL TRANSIENT CHARACTERISTICS
10
7.0
5.0 Cobo
Cibo
3.0
2.0
1.0
0.1
0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10
REVERSE BIAS (VOLTS)
Figure 3. Capacitance
20 30 40
TJ = 25°C
TJ = 125°C
5000
3000 VCC = 40 V
2000 IC/IB = 10
1000
700
500
300
200
100
70
50
1.0
QT
QA
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Charge Data
200
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 10
tr @ VCC = 3.0 V
15 V
40 V
td @ VOB = 0 V
2.0 V
2.0 3.0 5.0 7.0 10
20 30 50 70 100 200
IC, COLLECTOR CURRENT (mA)
Figure 5. Turn On Time
500
300
200
100
70
50
30
20
10
7
5
1.0
IC/IB = 20
VCC = 40 V
IB1 = IB2
IC/IB = 10
2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (mA)
Figure 6. Fall Time
200
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2N3906
TYPICAL AUDIO SMALLSIGNAL CHARACTERISTICS
NOISE FIGURE VARIATIONS
(VCE = 5.0 Vdc, TA = 25°C, Bandwidth = 1.0 Hz)
5.0
SOURCE RESISTANCE = 200 W
IC = 1.0 mA
4.0
SOURCE RESISTANCE = 200 W
IC = 0.5 mA
3.0
SOURCE RESISTANCE = 2.0 k
IC = 50 mA
2.0
1.0 SOURCE RESISTANCE = 2.0 k
IC = 100 mA
0
0.1 0.2 0.4
1.0 2.0 4.0 10 20 40
f, FREQUENCY (kHz)
Figure 7.
100
12
f = 1.0 kHz
10
8
IC = 1.0 mA
IC = 0.5 mA
6
4 IC = 50 mA
2 IC = 100 mA
0
0.1 0.2
0.4 1.0 2.0 4.0 10 20
Rg, SOURCE RESISTANCE (k OHMS)
Figure 8.
40
100
300
200
100
70
50
30
0.1
20
10
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
h PARAMETERS
(VCE = 10 Vdc, f = 1.0 kHz, TA = 25°C)
100
70
50
30
20
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 9. Current Gain
5.0 7.0 10
10
7
5
0.1
10
7.0
5.0
3.0
2.0
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 10. Output Admittance
0.2 0.3 0.5 0.7 1.0
2.0 3.0
IC, COLLECTOR CURRENT (mA)
Figure 11. Input Impedance
5.0 7.0 10
1.0
0.7
0.5
0.1
0.2 0.3 0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
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2.0
1.0
0.7
0.5
0.3
0.2
0.1
0.1
2N3906
TYPICAL STATIC CHARACTERISTICS
TJ = +125°C
+25°C
- 55°C
VCE = 1.0 V
0.2 0.3
0.5 0.7 1.0
2.0 3.0
5.0 7.0 10
IC, COLLECTOR CURRENT (mA)
Figure 13. DC Current Gain
20 30
50 70 100
200
1.0
0.8
IC = 1.0 mA
0.6
10 mA
30 mA
0.4
0.2
0
0.01
0.02 0.03 0.05 0.07 0.1
0.2 0.3
0.5 0.7 1.0
IB, BASE CURRENT (mA)
Figure 14. Collector Saturation Region
TJ = 25°C
100 mA
2.0 3.0
5.0 7.0 10
1.0
TJ = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE @ VCE = 1.0 V
0.4
VCE(sat) @ IC/IB = 10
0.2
0
1.0 2.0 5.0 10
20
50 100 200
IC, COLLECTOR CURRENT (mA)
Figure 15. “ON” Voltages
1.0
0.5 qVC FOR VCE(sat)
0
- 0.5
- 1.0
- 1.5 qVB FOR VBE(sat)
+25°C TO +125°C
- 55°C TO +25°C
+25°C TO +125°C
- 55°C TO +25°C
- 2.0
0
20 40 60 80 100 120 140 160 180 200
IC, COLLECTOR CURRENT (mA)
Figure 16. Temperature Coefficients
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2N3906
PACKAGE DIMENSIONS
A
R
SEATING
PLANE
B
P
L
K
XX
H
V
G
C
1
N
N
TO92 (TO226)
CASE 2911
ISSUE AM
STRAIGHT LEAD
BULK PACK
D
J
SECTION XX
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. CONTOUR OF PACKAGE BEYOND DIMENSION R
IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P AND
BEYOND DIMENSION K MINIMUM.
INCHES
DIM MIN MAX
A 0.175 0.205
B 0.170 0.210
C 0.125 0.165
D 0.016 0.021
G 0.045 0.055
H 0.095 0.105
J 0.015 0.020
K 0.500 ---
L 0.250 ---
N 0.080 0.105
P --- 0.100
R 0.115 ---
V 0.135 ---
MILLIMETERS
MIN MAX
4.45 5.20
4.32 5.33
3.18 4.19
0.407 0.533
1.15 1.39
2.42 2.66
0.39 0.50
12.70 ---
6.35 ---
2.04 2.66
--- 2.54
2.93 ---
3.43 ---
RAB
P
T
SEATING
PLANE
K
XX
G
V
1
C
N
BENT LEAD
TAPE & REEL
AMMO PACK
D
J
SECTION XX
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. CONTOUR OF PACKAGE BEYOND
DIMENSION R IS UNCONTROLLED.
4. LEAD DIMENSION IS UNCONTROLLED IN P
AND BEYOND DIMENSION K MINIMUM.
MILLIMETERS
DIM MIN MAX
A 4.45 5.20
B 4.32 5.33
C 3.18 4.19
D 0.40 0.54
G 2.40 2.80
J 0.39 0.50
K 12.70 ---
N 2.04 2.66
P 1.50 4.00
R 2.93 ---
V 3.43 ---
STYLE 1:
PIN 1.
2.
3.
EMITTER
BASE
COLLECTOR
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
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Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
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2N3906/D





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