Micro Commercial Components
Micro Commercial Components


2N3906

PNP General Purpose Amplifier


2N3906 Datasheet PDF
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MCC
  omponents
21201 Itasca Street Chatsworth

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$ %    !"#
2N3906
Features
Through Hole Package
Capable of 600mWatts of Power Dissipation
Pin Configuration
Bottom View
CB E
Electrical Characteristics @ 25°C Unless Otherwise Specified
Symbol
Parameter
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown Voltage*
40
Vdc
(IC=1.0mAdc, IB=0)
V(BR)CBO
Collector-Base Breakdown Voltage
40
Vdc
(IC=10µAdc, IE=0)
V(BR)EBO
Emitter-Base Breakdown Voltage
5.0
Vdc
(IE=10µAdc, IC=0)
IBL Base Cutoff Current
50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ICEX Collector Cutoff Current
50 nAdc
(VCE=30Vdc, VBE=3.0Vdc)
ON CHARACTERISTICS
hFE
VCE(sat)
VBE(sat)
DC Current Gain*
(IC=0.1mAdc, VCE=1.0Vdc)
(IC=1.0mAdc, VCE=1.0Vdc)
(IC=10mAdc, VCE=1.0Vdc)
(IC=50mAdc, VCE=1.0Vdc)
(IC=100mAdc, VCE=1.0Vdc)
Collector-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
Base-Emitter Saturation Voltage
(IC=10mAdc, IB=1.0mAdc)
(IC=50mAdc, IB=5.0mAdc)
60
80
100
60
30
0.65
300
0.25
0.4
0.85
0.95
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
fT Current Gain-Bandwidth Product
(IC=10mAdc, VCE=20Vdc, f=100MHz)
250
MHz
Cobo Output Capacitance
(VCB=5.0Vdec, IE=0, f=100MHz)
4.5 pF
Cibo Input Capacitance
(VBE=0.5Vdc, IC=0, f=100kHz)
10.0 pF
NF Noise Figure
(IC=100µAdc, VCE=5.0Vdc, RS=1.0k
4.0 dB
f=10Hz to 15.7kHz)
SWITCHING CHARACTERISTICS
td
Delay Time
(VCC=3.0Vdc, VBE=0.5Vdc
tr
Rise Time
IC=10mAdc, IB1=1.0mAdc)
ts Storage Time (VCC=3.0Vdc, IC=10mAdc
tf
Fall Time
IB1=IB2=1.0mAdc)
*Pulse Width 300µs, Duty Cycle 2.0%
35 ns
35 ns
225 ns
75 ns
PNP General
Purpose Amplifier
TO-92
A
E
B
C
D
G
DIMENSIONS
INCHES
DIM MIN
MAX
A .175 .185
B .175 .185
C .500
---
D .016 .020
E .135 .145
G .095 .105
MM
MIN
4.45
4.46
12.7
0.41
3.43
2.42
MAX
4.70
4.70
---
0.63
3.68
2.67
NOTE
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2N3906 Datasheet PDF
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2N3906
DC Current Gain vs Collector Current
220
VCE = 1.0V
200
160
hFE
120
80
40
0.1 1 10 100
IC (mA)
Collector-Emitter Saturation
Volatge vs Collector Current
0.6
IC/IB = 10
0.5 TA = 25°C
0.4
VCE(SAT) - (V) 0.3
0.2
0.1
0
1.0 10 100 1000
IC - (mA)
Collector-Base Diode Reverse
Current vs Temperature
100
VCB = 20V
10
ICBO - (mA)
1.0
0.1
0
25 50 75 100 125 150
TJ - (°C)
MCC
Base-Emitter ON Voltage vs
Collector Current
1.2
VCE = 5.0V
1.0 TA = 25°C
0.8
VBE(ON) - (V)
0.6
0.4 TA = 100°C
0.2
0
0.1 1.0
10
IC - (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1.4
IC/IB = 10
TA = 25°C
1.2
1.0
VBE(SAT) - (V) 0.8
0.6
0.4
0.2
1.0
10 100
IC - (mA)
1000
Common Base Open Circuit Input and
Output Capacitance vs Reverse Bias Voltage
1.0 COBO
TA = 25°C
TO-92
8
6
pF
4
2
0
0.1
CIBO
1.0
Volts - (V)
10
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2N3906 Datasheet PDF
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2N3906
Maximum Power Dissipation vs
Ambient Temperature
800
600
PD(MAX) - (mW)
400
TO-92
200
SOT-23
0
0 50 100 150
TA - (°C)
Contours of Constant Gain
Bandwidth Product (fT)
24
200
20
16
VCE - (V) 12
8
4
0
0.1 1.0 10 100
IC - (mA)
*100MHz increments from 100
to 700, 750 and 800MHz
Noise Figure vs
Frequency
6
5
VCE = 5.0V
4
NF - (dB) 3
IC = 100µA RS = 200
2
1
0
0.1
IC = 1.0mA RS = 200
IC = 100µA RS = 2.0k
1.0 10 100
f - (kHz)
MCC
Noise Figure vs
Source Resistance
12
10
VCE = 5.0V
f = 1.0kHz
NF - (dB)
8 IC = 1.0mA
6
IC = 100µA
4
2
0
0.1 1.0 10 100
RS - (k)
Current Gain
1000
VCE = 10V
f = 1.0kHz
hfe 100
10
0.1
1.0
IC - (mA)
10
Switching Times vs
Collector Current
1000
IB1 = IB2 = IC/10
100
T - (ns)
ts
tf
10
1.0
1.0
10
IC - (mA)
tr
td
100
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2N3906 Datasheet PDF
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2N3906
Input Impedance
10
VCE = 10V
f = 1.0kHz
hie - (k)
1.0
MCC
Output Admittance
1000
VCE = 10V
f = 1.0kHz
hoe - (µΩ)
100
0.1
0.1
1.0
IC - (mA)
10
10
0.1
1.0
IC - (mA)
10
Voltage Feedback Ratio
100
hfe - (X10-4)
10
1.0
0.1
1.0
IC - (mA)
Turn On and Turn Off Times vs
Collector Current
1000
100
toff
T - (ns)
10
ton
ton IB1 = IC/10
VBE(OFF) = 0.5V
toff IB1 = IB2 = IC/10
1.0
10 1.0 10 100
IC - (mA)
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