General Semiconductor
General Semiconductor


2N3906

SMALL SIGNAL TRANSISTORS PNP


2N3906 Datasheet PDF
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2N3906
SMALL SIGNAL TRANSISTORS (PNP)
TO-92
0.181 (4.6)
0.142 (3.6)
max. Æ 0.022 (0.55)
0.098 (2.5)
EC
B
Dimensions in inches and (millimeters)
FEATURES
¨ PNP Silicon Epitaxial Planar Transistor for
switching and amplifier applications.
¨ As complementary type, the NPN transistor
2N3904 is recommended.
¨ On special request, this transistor is also
manufactured in the pin configuration
TO-18.
¨ This transistor is also available in the SOT-23 case with
the type designation MMBT3906.
MECHANICAL DATA
Case: TO-92 Plastic Package
Weight: approx. 0.18g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Power Dissipation at TA = 25¡C
at TC = 25¡C
Thermal Resistance Junction to Ambient Air
Junction Temperature
Storage Temperature Range
SYMBOL
ÐVCBO
ÐVCEO
ÐVEBO
ÐIC
Ptot
RqJA
Tj
TS
VALUE
40
40
5.0
200
625
1.5
250(1)
150
Ð 65 to +150
NOTES:
(1) Valid provided that leads are kept at ambient temperature.
UNIT
Volts
Volts
Volts
mA
mW
Watts
¡C/W
¡C
¡C
1/5/99


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2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Collector-Base Breakdown Voltage
at ÐIC = 10 mA, IE = 0
Collector-Emitter Breakdown Voltage
at ÐIC = 1 mA, IB = 0
Emitter-Base Breakdown Voltage
at ÐIE = 10 mA, IC = 0
Collector Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
Base Saturation Voltage
at ÐIC = 10 mA, ÐIB = 1 mA
at ÐIC = 50 mA, ÐIB = 5 mA
Collector-Emitter Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
Emitter-Base Cutoff Current
at ÐVEB = 3 V, ÐVCE = 30 V
DC Current Gain
at ÐVCE = 1 V, ÐIC = 0.1 mA
at ÐVCE = 1 V, ÐIC = 1 mA
at ÐVCE = 1 V, ÐIC = 10 mA
at ÐVCE = 1 V, ÐIC = 50 mA
at ÐVCE = 1 V, ÐIC = 100 mA
Input Impedance
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Voltage Feedback Ratio
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
Gain-Bandwidth Product
at ÐVCE = 20 V, ÐIC = 10 mA, f = 100 MHz
Collector-Base Capacitance
at ÐVCB = 5 V, f = 100 kHz
Emitter-Base Capacitance
at ÐVEB = 0.5 V, f = 100 kHz
SYMBOL
ÐV(BR)CBO
ÐV(BR)CEO
ÐV(BR)EBO
MIN.
40
40
5
ÐVCEsat
ÐVCEsat
ÐVBEsat
ÐVBEsat
ÐICEV
Ð
Ð
Ð
Ð
Ð
ÐIEBV
hFE
hFE
hFE
hFE
hFE
hie
hre
fT
CCBO
CEBO
Ð
60
80
100
60
30
1
0.5 á 10Ð4
250
Ð
Ð
MAX.
Ð
Ð
Ð
0.25
0.4
0.85
0.95
50
50
Ð
Ð
300
Ð
Ð
10
8 á 10Ð4
Ð
4.5
10
UNIT
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nA
nA
Ð
Ð
Ð
Ð
Ð
kW
Ð
MHz
pF
pF


2N3906 Datasheet PDF
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2N3906
ELECTRICAL CHARACTERISTICS
Ratings at 25¡C ambient temperature unless otherwise specified
Small Signal Current Gain
at ÐVCE = 10 V, ÐIC = 1 mA, f = 1 kHz
SYMBOL
hfe
MIN.
100
Output Admittance
at ÐVCE = 1 V, ÐIC = 1 mA, f = 1 kHz
hoe 1
Noise Figure
at ÐVCE = 5 V, ÐIC = 100 mA, RG = 1 kW,
f = 10 É 15000 Hz
NF Ð
Delay Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
td Ð
Rise Time (see Fig. 1)
at ÐIB1 = 1 mA, ÐIC = 10 mA
tr Ð
Storage Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
ts Ð
Fall Time (see Fig. 2)
at IB1 = ÐIB2 = 1 mA, ÐIC = 10 mA
tf Ð
MAX.
400
40
4
35
35
225
75
UNIT
Ð
mS
dB
ns
ns
ns
ns
Fig. 1: Test circuit for delay and rise time
* total shunt capacitance of test jig and connectors
Fig. 2: Test circuit for storage and fall time
* total shunt capacitance of test jig and connectors




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