Fairchild Semiconductor Electronic Components Datasheet



2N3906

PNP General Purpose Amplifier


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April 2014
2N3906 / MMBT3906 / PZT3906
PNP General-Purpose Amplifier
Description
This device is designed for general-purpose amplifier
and switching applications at collector currents of 10 mA
to 100 mA.
2N3906
EBC
TO-92
MMBT3906
C
SOT-23
Mark:2A
E
B
PZT3906
C
SOT-223
E
C
B
Ordering Information
Part Number
2N3906BU
2N3906TA
2N3906TAR
2N3906TF
2N3906TFR
MMBT3906
PZT3906
Marking
2N3906
2N3906
2N3906
2N3906
2N3906
2A
3906
Package
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
TO-92 3L
SOT-23 3L
SOT-223 4L
Packing Method
Bulk
Ammo
Ammo
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Pack Quantity
10000
2000
2000
2000
2000
3000
2500
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
1
www.fairchildsemi.com


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Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VCEO
VCBO
VEBO
IC
TJ, TSTG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
-40
-40
-5.0
-200
-55 to +150
V
V
V
mA
°C
Note:
1. These ratings are based on a maximum junction temperature of 150°C.
These are steady-state limits. Fairchild Semiconductor should be consulted on applications involving pulsed
or low-duty cycle operations.
Thermal Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
PD
RθJC
RθJA
Parameter
Total Device Dissipation
Derate Above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
2N3906(3)
625
5.0
83.3
200
Maximum
MMBT3906(2)
350
2.8
PZT3906(3)
1,000
8.0
357 125
Unit
mW
mW/°C
°C/W
°C/W
Notes:
2. Device is mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
3. PCB size: FR-4, 76 mm x 114 mm x 1.57 mm (3.0 inch x 4.5 inch x 0.062 inch) with minimum land pattern size.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
2
www.fairchildsemi.com


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Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
OFF CHARACTERISTICS
Conditions
V(BR)CEO
Collector-Emitter Breakdown
Voltage(4)
IC = -1.0 mA, IB = 0
V(BR)CBO Collector-Base Breakdown Voltage IC = -10 μA, IE = 0
V(BR)EBO Emitter-Base Breakdown Voltage IE = -10 μA, IC = 0
IBL Base Cut-Off Current
VCE = -30 V, VBE = 3.0 V
ICEX Collector Cut-Off Current
VCE = -30 V, VBE = 3.0 V
ON CHARACTERISTICS
hFE DC Current Gain(4)
VCE(sat)
Collector-Emitter Saturation
Voltage
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = -0.1 mA, VCE = -1.0 V
IC = -1.0 mA, VCE = -1.0 V
IC = -10 mA, VCE = -1.0 V
IC = -50 mA, VCE = -1.0 V
IC = -100 mA, VCE = -1.0V
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
IC = -10 mA, IB = -1.0 mA
IC = -50 mA, IB = -5.0 mA
fT
Current Gain - Bandwidth Product
IC = -10 mA, VCE = -20 V,
f = 100 MHz
Cobo Output Capacitance
VCB = -5.0 V, IE = 0,
f = 100 kHz
Cibo Input Capacitance
NF Noise Figure
VEB = -0.5 V, IC = 0,
f = 100 kHz
IC = -100 μA, VCE = -5.0 V,
RS = 1.0 kΩ,
f = 10 Hz to 15.7 kHz
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = -3.0 V, VBE = -0.5 V
IC = -10 mA, IB1 = -1.0 mA
VCC = -3.0 V, IC = -10 mA,
IB1 = IB2 = -1.0 mA
Note:
4. Pulse test: pulse width 300 μs, duty cycle 2.0%.
Min.
-40
-40
-5.0
60
80
100
60
30
-0.65
250
Max. Unit
V
V
V
-50 nA
-50 nA
300
-0.25
-0.40
-0.85
-0.95
V
V
MHz
4.5 pF
10.0 pF
4.0 dB
35 ns
35 ns
225 ns
75 ns
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
3
www.fairchildsemi.com


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Typical Performance Characteristics
250
125 °C
200
V CE = 1 .0V
150
25 °C
100
- 40 °C
50
0.1 0.2 0.5 1 2
5 10 20 50 100
I C - COLLECTOR CURRE NT (mA)
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
0.3
0.25
β = 10
0.2
0.15
25 °C
0.1
0.05
0
1
125°C
- 40 °C
10 100 200
I C - COLLECTOR CURRENT (mA)
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1 β = 10
0.8
0.6
- 40 °C
25 °C
125 °C
0.4
0.2
0
1 10 100 200
I C - COLLECTOR CURRE NT (mA)
Figure 3. Base-Emitter Saturation Voltage
vs. Collector Current
1
0.8
- 40 °C
0.6 25 °C
125 °C
0.4
0.2 VCE = 1V
0
0.1 1 10
I C - COLLECTOR CURRENT (mA)
Figure 4. Base-Emitter On Voltage vs.
Collector Current
25
100
VCB= 25V
10
1
0.1
0.01
25
50 75 100
TA - AMBIE NT TEMP ERATURE (° C)
125
Figure 5. Collector Cut-Off Current vs.
Ambient Temperature
10
8
6
4
2
0
0.1
C obo
C ibo
1
REVERSE BIAS VOLTAGE (V)
10
Figure 6. Common-Base Open Circuit Input and Out-
put Capacitance vs. Reverse Bias Voltage
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
4
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
6
V CE = 5.0V
5
4
3 I C = 100 μA, R S = 200Ω
2
I C = 1.0 mA, R S = 200Ω
1
I C = 100 μA, R S = 2.0 kΩ
0
0.1 1
10 100
f - FREQUENCY (kHz)
Figure 7. Noise Figure vs. Frequency
500
100 t s
tf
10
IB1= IB2=
Ic
10
tr
td
1
1 10
I C - COLLECTOR CURRENT (mA)
100
Figure 9. Switching Times vs. Collector Current
1
0.75
TO-92
0.5
SOT-23
0.25
SOT-223
0
0 25 50 75 100 125
TEMPERATURE (o C)
Figure 11. Power Dissipation vs.
Ambient Temperature
150
12
10
8 I C = 1.0 mA
V CE = 5.0V
f = 1.0 kHz
6
4
I C = 100 μA
2
0
0.1 1 10 100
R S - SOURCE RESISTANCE ( kΩ )
Figure 8. Noise Figure vs. Source Resistance
500
100
t on
I B1 =
Ic
10
10 VBE(OFF)= 0.5V
t off
IB1= I B2=
Ic
10
t off
t on
1
1 10 100
I - COLLECTOR CURRENT (mA)
Figure 10. Turn-On and Turn-Off Times vs.
Collector Current
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
5
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
100 10
10 1
VCE = 10 V
f = 1.0 kHz
1
0.1 1
I C- COLLECTOR CURRENT (mA)
Figure 12. Voltage Feedback Ratio
10
1000
VCE = 10 V
f = 1.0 kHz
100
10
0.1
1
I C - COLLECTOR CURRENT (mA)
Figure 14. Output Admittance
10
0.1
0.1
1
I C - COLLECTOR CURRENT (mA)
Figure 13. Input Impedance
10
1000
500
VCE = 10 V
f = 1.0 kHz
200
100
50
20
10
0.1
1
I C - COLLECTOR CURRENT (mA)
Figure 15. Current Gain
10
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
6
www.fairchildsemi.com


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Physical Dimensions
TO-92 (Bulk)
D
Figure 16. 3-LEAD, TO92, JEDEC TO-92 COMPLIANT STRAIGHT LEAD CONFIGURATION (OLD TO92AM3)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03D_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
7
www.fairchildsemi.com


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Physical Dimensions (Continued)
TO-92 (Ammo, Tape and Reel)
Figure 17. 3-LEAD, TO92, MOLDED 0.200 IN LINE SPACING LEAD FORM (J61Z OPTION)
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/ZA/ZA03F.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-ZA03F_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
8
www.fairchildsemi.com


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Physical Dimensions (Continued)
SOT-23
2.92±0.20
3
0.95
1.40
1.30+-00..1250
2.20
(0.29)
1
0.95
1.90
1.20 MAX
(0.93)
C
GAGE PLANE
0.23
0.08
0.20 MIN
(0.55)
2
0.60
0.37
0.20
AB
1.90
LAND PATTERN
RECOMMENDATION
1.00
SEE DETAIL A
0.10
0.00
0.10
C
2.40±0.30
NOTES: UNLESS OTHERWISE SPECIFIED
0.25
SEATING
PLANE
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
SCALE: 2X
Figure 18. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA03D.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA03D.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
9
www.fairchildsemi.com


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Physical Dimensions (Continued)
SOT-223 4L
Figure 19. MOLDED PACKAGE, SOT-223, 4-LEAD
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the
warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/dwg/MA/MA04A.pdf.
For current tape and reel specifications, visit Fairchild Semiconductor’s online packaging area:
http://www.fairchildsemi.com/packing_dwg/PKG-MA04A_BK.pdf.
© 2010 Fairchild Semiconductor Corporation
2N3906 / MMBT3906 / PZT3906 Rev. 1.2.2
10
www.fairchildsemi.com


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intended to be an exhaustive list of all such trademarks.
AccuPower¥
AX-CAP®*
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®
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and Better™
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®
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¥
Saving our world, 1mW/W/kW at a time™
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®*
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௝❺
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No Identification Needed
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Formative / In Design
First Production
Full Production
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Datasheet contains the design specifications for product development. Specifications may change
in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
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The datasheet is for reference information only.
Rev. I68
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