Rohm Semiconductor Electronic Components Datasheet


2N3904

NPN General Purpose Transistor


2N3904 Datasheet PDF
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Transistors
UMT3904 / SST3904 / MMST3904 / 2N3904
NPN General Purpose Transistor
UMT3904 / SST3904 / MMST3904 / 2N3904
!Features
1) BVCEO > 40V (IC = 1mA)
2) Complements the UMT3906 / SST3906 / MMST3906
/ 2N3906.
!Package, marking and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit
(pieces)
UMT3904
UMT3
R1A
T106
SST3904
SST3
R1A
T116
MMST3904
SMT3
R1A
T146
2N3904
TO-92
-
T93
3000
3000
3000
3000
!Absolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VCBO
VCEO
VEBO
IC
UMT3904,
Collector SST3904,
power
MMST3904
dissipation SST3904, MMST3904
PC
2N3904
Junction temperature
Tj
Storage temperature
Tstg
* When mounted on a 7 x 5 x 0.6 mm ceramic board.
Limits
60
40
6
0.2
0.2
0.35
0.625
150
55~+150
Unit
V
V
V
A
W
W*
W
°C
°C
!External dimensions (Units : mm)
UMT3904
ROHM : UMT3
EIAJ : SC-70
2.0±0.2
1.3±0.1
0.65 0.65
(1) (2)
0.9±0.1
0.2 0.7±0.1
0~0.1
(3)
0.3
+0.1
0
0.15±0.05
All terminals have same dimensions
SST3904
ROHM : SST3
MMST3904
ROHM : SMT3
EIAJ : SC-59
2N3904
2.9±0.2
1.9±0.2
0.95 0.95
0.95
+0.2
0.1
0.45±0.1
(1) (2)
(3)
0~0.1
0.2Min.
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have same dimensions
2.9±0.2
1.9±0.2
0.95 0.95
(1) (2)
1.1
+0.2
0.1
0.8±0.1
0~0.1
(3)
0.4
+0.1
0.05
0.15
+0.1
0.06
All terminals have same dimensions
4.8±0.2
3.7±0.2
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
0.5
+0.15
0.05
(1)
(2)
(3)
2.5
+0.3
0.1
5
0.45±0.1
2.3
(1) Emitter
(2) Base
(3) Collector
!Electrical characteristics (Ta = 25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Symbol
BVCBO
BVCEO
BVEBO
ICES
IEBO
VCE(sat)
Base-emitter saturation voltage
VBE(sat)
DC current transfer ratio
Transition frequency
Collector output capacitance
Emitter input capacitance
Delay time
Rise time
Storage time
Fall time
hFE
fT
Cob
Cib
td
tr
tstg
tf
Min.
60
40
6
-
-
-
-
0.65
-
40
70
100
60
30
300
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
~
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.2
0.3
0.85
0.95
-
-
300
-
-
-
4
8
35
35
200
50
Unit
V
V
V
nA
nA
V
V
-
MHz
pF
pF
ns
ns
ns
ns
Conditions
IC = 10µA
IC = 1mA
IE = 10µA
VCB = 30V
VEB = 3V
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
IC/IB = 10mA/1mA
IC/IB = 50mA/5mA
VCE = 1V , IC = 0.1mA
VCE = 1V , IC = 1mA
VCE = 1V , IC = 10mA
VCE = 1V , IC = 50mA
VCE = 1V , IC = 100mA
VCE = 20V , IE = 10mA, f = 100MHz
VCB = 10V , f = 100kHz
VEB = 0.5V , f = 100kHz
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
VCC = 3V , VBE(OFF) = 0.5V , IC = 10mA , IB1 = 1mA
VCC = 3V , IC = 10mA , IB1 = IB2 = 1mA
VCC = 3V , IC = 10mA , IB1 = IB2 = 1mA


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Transistors
!Electrical characteristic curves
10
40
Ta=25°C
35
8
30
6 25
20
4 15
10
2
5.0
IB=0µA
0
0 10 20
COLLECTOR-EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter output
characteristics
UMT3904 / SST3904 / MMST3904 / 2N3904
Ta=25°C
IC / IB=10
0.3
0.2
0.1
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC (mA)
Fig.2 Collector-emitter saturation
voltage vs. collector current
500
Ta=25°C
VCE=1V 3V 5V 10V
100
10
5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.3 DC current gain vs. collector current ( Ι )
500
Ta=125°C
Ta=25°C
100
Ta=55°C
VCE=5V
10
5
0.1 1.0 10 100 1000
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector current ( ΙΙ )


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Transistors
UMT3904 / SST3904 / MMST3904 / 2N3904
500
100
10
5
0.01
Ta=25°C
VCE=5V
f=1kHz
0.1 1.0 10
COLLECTOR CURRENT : IC (mA)
Fig.5 AC current gain vs. collector current
100
1.8 Ta=25°C
IC / IB=10
1.6
1.2
0.8
0.4
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC (mA)
Fig.6 Base-emitter saturation
voltage vs. collector current
1.8
1.6
Ta=25°C
VCE=5V
1000
Ta=25°C
IC / IB=10
1000
Ta=25°C
IC / IB=10
1.2
VCC=40V
40V
0.8
100 15V
100
VCC=3V
0.4
0
0.1 1.0 10 100
COLLECTOR CURRENT : IC (mA)
Fig.7 Grounded emitter propagation
characteristics
10
1.0
10 100
COLLECTOR CURRENT : IC (mA)
Fig.8 Turn-on time vs. collector
current
10
1.0
10 100
COLLECTOR CURRENT : IC (mA)
Fig.9 Rise time vs. collector
current
1000
Ta=25°C
IC=10IB1=10IB2
1000
Ta=25°C
VCC=40V
IC/IB=10
50
Ta=25°C
f=1MHz
40V
100
15V
VCE=3V
10
1.0
10 100
COLLECTOR CURRENT : IC (mA)
Fig.10 Storage time vs. collector
current
100
10
1.0
10 100
COLLECTOR CURRENT : IC (mA)
Fig.11 Fall time vs. collector
current
10
Cib
Cob
1
0.5
0.1
1.0 10 100
REVERSE BIAS VOLTAGE (V)
Fig.12 Input / output capacitance
vs. voltage


2N3904 Datasheet PDF
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Transistors
UMT3904 / SST3904 / MMST3904 / 2N3904
100
100MHz 200MHz 400MHz 500MHz
Ta=25°C
300 MHz
10
1.0
300MHz
0.1
0.1
200MHz
100MHz
1.0 10 100
COLLECTOR CURRENT : IC (mA)
Fig.13 Gain bandwidth product
1000
Ta=25°C
VCE=5V
100
VCE=5V
f=270Hz
hoe
10
100
10
1.0
10 100
COLLECTOR CURRENT : IC (mA)
Fig.14 Gain bandwidth product
vs. collector current
hie
hre
1
0.1
0.1
hfe
Ta=25°C
IC=1mA
hie=3.84k
hfe=141
hre=5.03
×
105
hoe=5.58µS
1 10 100
COLLECTOR CURRENT : IC (mA)
Fig.15 h parameter vs. collector current
10µ VCB=25V
1µ
100n
10n
1n
100k
10k
1k
Ta=25°C
VCE=5V
f=10kHz
100k
1.0d3BdB
3.0dNBF=1.0dB
10k
1k 3.0dNBF=1.0dB
Ta=25°C
VCE=5V
f=1kHz
0.1n
0 25 50 75 100 125 150
ANBIENT TEMPERATURE : Ta (°C)
Fig.16 Noise characteristics ( Ι )
100
0.01
0.1
1
10
COLLECTOR CURRENT : IC (mA)
Fig.17 Noise characteristics ( ΙΙ )
100
0.01 0.1 1 10
COLLECTOR CURRENT : IC (mA)
Fig.18 Noise characteristics ( ΙΙΙ )
100k
10k
Ta=25°C
VCE=5V
f=10Hz
1k N5F.0=d3B.0dB
100
0.01 0.1 1 10
COLLECTOR CURRENT : IC (mA)
Fig.19 Noise characteristics ( ΙV )
12
10
8
6
4
2
0
10
Ta=25°C
VCE=5V
IC=100µA
RS=10k
100 1k
10k
FREQUENCY : f (Hz)
Fig.20 Noise vs. collector current
100k




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