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2N3904 Datasheet PDF
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2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
October 2011
2N3904
EB C
TO-92
MMBT3904
C
SOT-23
Mark:1A
E
B
PZT3904
C
SOT-223
E
C
B
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to +150
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
2N3904
Max.
*MMBT3904 **PZT3904
Units
PD
Total Device Dissipation
Derate above 25°C
625
350
1,000
mW
5.0 2.8 8.0 mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125 °C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
1
www.fairchildsemi.com
http://www.Datasheet4U.com


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Electrical Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
OFF CHARACTERISTICS
V(BR)CEO Collector-Emitter Breakdown Voltage
V(BR)CBO Collector-Base Breakdown Voltage
V(BR)EBO Emitter-Base Breakdown Voltage
IBL Base Cutoff Current
ICEX
Collector Cutoff Current
ON CHARACTERISTICS*
IC = 1.0mA, IB = 0
IC = 10μA, IE = 0
IE = 10μA, IC = 0
VCE = 30V, VEB = 3V
VCE = 30V, VEB = 3V
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
IC = 0.1mA, VCE = 1.0V
IC = 1.0mA, VCE = 1.0V
IC = 10mA, VCE = 1.0V
IC = 50mA, VCE = 1.0V
IC = 100mA, VCE = 1.0V
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
IC = 10mA, IB = 1.0mA
IC = 50mA, IB = 5.0mA
fT
Current Gain - Bandwidth Product
IC = 10mA, VCE = 20V,
f = 100MHz
Cobo
Output Capacitance
VCB = 5.0V, IE = 0,
f = 1.0MHz
Cibo Input Capacitance
VEB = 0.5V, IC = 0,
f = 1.0MHz
NF Noise Figure
IC = 100μA, VCE = 5.0V,
RS = 1.0kΩ,
f = 10Hz to 15.7kHz
SWITCHING CHARACTERISTICS
td Delay Time
tr Rise Time
ts Storage Time
tf Fall Time
VCC = 3.0V, VBE = 0.5V
IC = 10mA, IB1 = 1.0mA
VCC = 3.0V, IC = 10mA,
IB1 = IB2 = 1.0mA
* Pulse Test: Pulse Width 300μs, Duty Cycle 2.0%
Min.
40
60
6.0
40
70
100
60
30
0.65
300
Max.
50
50
Units
V
V
V
nA
nA
300
0.2 V
0.3 V
0.85 V
0.95 V
MHz
4.0 pF
8.0 pF
5.0 dB
35 ns
35 ns
200 ns
50 ns
Ordering Information
Part Number
2N3904BU
2N3904TA
2N3904TAR
2N3904TF
2N3904TFR
MMBT3904
MMBT3904_D87Z
PZT3904
Marking
2N3904
2N3904
2N3904
2N3904
2N3904
1A
1A
3904
Package
TO-92
TO-92
TO-92
TO-92
TO-92
SOT-23
SOT-23
SOT-223
Packing Method
BULK
AMMO
AMMO
TAPE REEL
TAPE REEL
TAPE REEL
TAPE REEL
TAPE REEL
Pack Qty
10000
2000
2000
2000
2000
3000
10000
2500
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
2
www.fairchildsemi.com


2N3904 Datasheet PDF
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Typical Performance Characteristics
Typical Pulsed Current Gain
vs Collector Current
500
V CE = 5V
400
125 °C
300
25 °C
200
100 - 40 °C
0
0.1 1 10 100
I C - COLLECTOR CURRENT (mA)
Collector-Emitter Saturation
Voltage vs Collector Current
0.15 ββ = 10
0.1
125 °C
0.05
0.1
25 °C
- 40 °C
1 10
I C - COLLECTOR CURRENT (mA)
100
Base-Emitter Saturation
Voltage vs Collector Current
1 ββ = 10
0.8 - 40 °C
0.6
25 °C
0.4
125 °C
0.1 1 10
I C - COLLECTOR CURRENT (mA)
100
Collector-Cutoff Current
vs Ambient Temperature
500
100
V = 30V
CB
10
1
0.1
25 50 75 100 125 150
TA - AMBIENT TEMPERATURE (°C)
Base-Emitter ON Voltage vs
Collector Current
1
VCE = 5V
0.8 - 40 °C
25 °C
0.6
125 °C
0.4
0.2
0.1
1 10
I C - COLLECTOR CURRENT (mA)
100
10
5
4
3
2
1
0.1
Capacitance vs
Reverse Bias Voltage
f = 1.0 MHz
C ibo
C obo
1 10
REVERSE BIAS VOLTAGE (V)
100
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
3
www.fairchildsemi.com


2N3904 Datasheet PDF
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Typical Performance Characteristics (continued)
Noise Figure vs Frequency
12
I C = 1.0 mA
10 R S = 200ΩΩ
I C = 50 μμAA
8 R S = 1.0 kkΩΩ
V CE = 5.0V
I C = 0.5 mA
6 R S = 200ΩΩ
4
2 I C = 100 μμAA, R S = 500 ΩΩ
0
0.1 1
10 100
f - FREQUENCY (kHz)
Current Gain and Phase Angle
vs Frequency
50
45 h fe
40
35
30
25 θθ
20
15
10 V CE = 40V
5 I C = 10 mA
0
1 10 100
f - FREQUENCY (MHz)
0
20
40
60
80
100
120
140
160
180
1000
Noise Figure vs Source Resistance
12
I C = 1.0 mA
10
I C = 5.0 mA
8
I C= 50 μμAA
6
4 I C= 100 μμAA
2
0
0.1 1 10 100
R S - SOURCE RESISTANCE ((kkΩΩ) )
Power Dissipation vs
Ambient Temperature
1
0.75
TO-92
SOT-223
0.5
SOT-23
0.25
0
0 25 50 75 100 125 150
TEMPERATURE (oC)
Turn-On Time vs Collector Current
500
IB1 = IB2 =
Ic
10
40V
100 15V
t r @ V CC = 3.0V
2.0V
10
t d @ VCB = 0V
5
1 10
100
I C - COLLECTOR CURRENT (mA)
Rise Time vs Collector Current
500
VCC = 40V
IB1 = IB2 =
Ic
10
100
T J = 125°C
T J = 25°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
4
www.fairchildsemi.com


2N3904 Datasheet PDF
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Typical Performance Characteristics (continued)
Storage Time vs Collector Current
500
T J = 25°C
IB1 = IB2=
Ic
10
100
T J = 125°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
Current Gain
500
VCE = 10 V
f = 1.0 kHz
T A = 25oC
100
Fall Time vs Collector Current
500
IB1 = IB2 =
Ic
10
T J = 125°C
VCC = 40V
100
T J = 25°C
10
5
1 10 100
I C - COLLECTOR CURRENT (mA)
Output Admittance
100 VCE = 10 V
f = 1.0 kHz
T A = 25oC
10
10
0.1
1
I C - COLLECTOR CURRENT (mA)
10
1
0.1 1 10
I C - COLLECTOR CURRENT (mA)
Input Impedance
100
VCE = 10 V
f = 1.0 kHz
T A = 25oC
10
1
0.1
0.1
1
I C - COLLECTOR CURRENT (mA)
10
Voltage Feedback Ratio
10 VCE = 10 V
f = 1.0 kHz
7 T A = 25oC
5
4
3
2
1
0.1 1 10
I C- COLLECTOR CURRENT (mA)
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
5
www.fairchildsemi.com


2N3904 Datasheet PDF
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Test Circuits
3.0 V
330000nnss
Duty Cycle == 2%
0
- 0.5 V
<< 11..00nnss
10.6 V
10 KkΩΩ
275 ΩΩ
C1 << 4.0ppFF
FIGURE 1: Delay and Rise Time Equivalent Test Circuit
10 <<t1t<1 <50050μ0s μs
Duty Cycle = 2%
0
t1
- 9.1 V
10.9 V
<< 11..00nnss
10 KkΩΩ
1N916
3.0 V
275 ΩΩ
C < 44..00ppFF
1
FIGURE 2: Storage and Fall Time Equivalent Test Circuit
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
6
www.fairchildsemi.com


2N3904 Datasheet PDF
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Formative / In Design
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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I57
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www.fairchildsemi.com



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