2N3904 Datasheet PDF
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SEME
LAB
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
2N3904
GENERAL PURPOSE
NPN TRANSISTOR
FOR HIGH RELIABILITY
APPLICATIONS
FEATURES
• SILICON PLANAR EPITAXIAL NPN
TRANSISTOR
• CECC SCREENING OPTIONS
• HIGH SPEED SATURATED SWITCHING
31
2
TO-18 METAL PACKAGE
PIN 1 – Emitter PIN 2 – Base PIN 3 – Collector
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)
VCBO
Collector – Base Voltage
60V
VCEO
Collector – Emitter Voltage
40V
VEBO
Emitter – Base Voltage
6V
IC Collector Current
200mA
PD Total Device Dissipation @ TA =25°C
350mW
Derate above 25°C
3.33mW / °C
RqJA
TSTG , TJ
Thermal Resistance Junction – Ambient
Operating and Storage Temperature Range
300°C/W
–55 to +175°C
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim. 7/00


2N3904 Datasheet PDF
No Preview Available !

Click to Download PDF File

SEME
LAB
2N3904
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
V(BR)CEO*
V(BR)CBO
V(BR)EBO
Collector Emitter Breakdown Voltage IC = 1mA
mCollector Base Breakdown Voltage IC = 10 A
Emitter Base Breakdown Voltage
IE = 10mA
IB = 0
IE = 0
IC = 0
IBL Base Cut-off Current
VCE = 30V
ICEX
Collector Emitter Cut-off Current
VEB = 3V
VCE(sat)
Collector Emitter Saturation Voltage IC = 10mA
IC = 50mA
IB = 1mA
IB = 5mA
VBE(sat)* Base Emitter Saturation Voltage
IC = 10mA
IC = 50mA
IB = 1mA
IB = 5mA
IC = 0.1mA
IC = 1mA
hFE* DC Current Gain
VCE = 1V
IC = 10mA
IC = 50mA
* Pulse Test: tp £ 300ms, d £ 2%.
IC = 100mA
Min.
40
60
6
0.65
40
70
100
60
30
SMALL SIGNAL CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
ft
Current Gain Bandwidth Product
VCE = 20V IC = 10mA
f = 100MHz
Cob Output Capacitance
VCB = 5V
f = 1MHz
IE = 0
Cib Input Capacitance
VBE = 0.5V
f = 1MHz
IC = 0
hie Input Impedance
hoe Output Admittance
hre Voltage Feedback Ratio
hfe Small Signal Current Gain
NF Noise Figure
VCE = 10V
IC = 1mA
f = 1kHz
VCE = 5V
f = 1kHz
IC = 100mA
RS = 1kW
Min.
300
1
1
0.5
100
SWITCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Parameter
Test Conditions
td Delay Time
VCC = 3V
VBE = 0.5V
tr Rise Time
IC = 10mA IB1 = 1mA
ts Storage Time
VCC = 3V
VBE = 0.5V
tf Fall Time
IB1 = IB2 = 1mA
Min.
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Typ.
Typ.
Typ.
Max. Unit
V
50
nA
50
0.2
V
0.3
0.85
V
0.95
300
Max. Unit
MHz
4 pF
8 pF
10 kW
40 mhmos
8 x 10-4
400
5 dB
Max.
35
35
200
50
Unit
ns
Prelim. 7/00



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