Comset Semiconductor
Comset Semiconductor


2N2222

(2N222x/A) Switching Silicon Transistors


2N2222 Datasheet PDF
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NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
SWITCHING SILICON TRANSISTORS
The 2N2221-A and 2N2222-A are NPN transistors mounted in TO-18 metal case .
They are designed for high-speed switching applications and feature useful current
gain over a wide range of collector current, low leakage currents and low saturation
voltages.
Compliance to RoHS
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
VCEO
VCBO
VEBO
IC
PD
TJ
TStg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature range
www.DataSheet.net/
Tamb = 25°
Tcase= 25°
Value
2N2221 2N2221A
2N2222 2N2222A
30 40
60 75
56
800
0.5
1.8
175
-65 to +200
Unit
V
V
V
mA
W
°C
°C
THERMAL CHARACTERISTICS
Symbol
Ratings
RthJ-a
Thermal Resistance, Junction to ambient in free air
RthJ-c
Thermal Resistance, Junction to case
Value
50
187.5
Unit
°C/W
°C/W
1|4
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2N2222 Datasheet PDF
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NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
ICBO
IEBO
ICEX
VCEO
VCBO
VEBO
Collector Cutoff
Current
Emitter Cutoff
Current
Collector Cutoff
Current
Collector Emitter
Breakdown
Voltage (*)
Collector Base
Breakdown
Voltage
Emitter Base
Breakdown
Voltage
hFE
DC Current Gain
(*)
Test Condition(s)
VCB= 50 V Tj= 25°C 2N2221-2N2222
IE= 0
Tj= 150°C 2N2221-2N2222
VCB= 60 V Tj= 25°C 2N2221A-2N2222A
IE= 0
Tj= 150°C 2N2221A-2N2222A
VBE= 3.0 V, IC=0
2N2221-2N2222
2N2221A-2N2222A
Min Typ Mx
- - 10
- - 10
- - 10
- - 10
- - 10
Unit
nA
µA
nA
µA
nA
VCE= 60 V, -VBE= 3V 2N2221A-2N2222A - - 10 nA
IC= 10 mA, IB= 0
2N2221-2N2222
30 - -
V
2N2221A-2N2222A 40 - -
IC= 10 µA, IE= 0
2N2221-2N2222
2N2221A-2N2222A
www.DataSheet.net/
60
75
-
-
-
-
V
IE= 10 µA, IC= 0
2N2221-2N2222
5- -
V
2N2221A-2N2222A 6 - -
IC=0.1 mA, VCE=10 V
IC=1 mA, VCE=10 V
IC=10 mA, VCE=10 V
IC=10 mA, VCE=10 V
Tamb = -55°C
IC=150 mA, VCE=1 V
IC=150 mA, VCE=10 V
IC=500 mA, VCE=10 V
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221A
2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221-2N2221A
2N2222-2N2222A
2N2221
2N2221A
2N2222
2N2222A
20 - -
35 - -
25 - -
50 - -
35 - -
75 - -
15 - -
35 - -
20 - -
50 - -
40 - 120
100 - 300
20 - -
25
30 - -
40
-
16/10/2012
COMSET SEMICONDUCTORS
2|4
Datasheet pdf - http://www.DataSheet4U.co.kr/


2N2222 Datasheet PDF
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NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
VCE(SAT)
VBE(SAT)
fT
hfe
td
tr
ts
tf
rb,CC
Ratings
Collector-Emitter
saturation Voltage
(*)
Base-Emitter
saturation Voltage
(*)
Transition
frequency
Small signal
current gain
Delay time
Rise time
Storage time
Fall time
Feedback time
constant
Test Condition(s)
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
IC=150 mA, IB=15 mA
IC=500 mA, IB=50 mA
IC=20 mA, VCE=20 V
f= 100MHz
IC=1 mA, VCE=10 V
f= 1kHz
I =10 mA, V =10 VC
CE
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f= 1kHz
IC=150 mA, IB =15 mA
-VBB=0.5 V, VCC=30 V
IC=150 mA, IB =15 mA
-VBB=0.5 V, VCC=30 V
IC=150 mA, VCC=30 V
IB1 = -IB2 =15 mA
IC=150 mA, VCC=30 V
IB1 = -IB2 =15 mA
IC=20 mA, VCE=20 V
f= 31.8MHz
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N2222
2N2221A-2N2222A
2N2221-2N22218A
2N2222
2N2222A
2N2221A
2N2222A
2N2221A
2N2222A
2N2221A
2N2222A
2N2221A
2N2222A
2N2221A
2N2222A
2N2221A
2N2222A
2N2221A
2N2212A
Min Typ Mx
- - 0.4
- - 0.3
- - 1.6
- -1
- - 1.3
0.6 - 1.2
- - 2.6
- -2
250 - -
300 - -
30 - 150
50 - 300
50 - 300
75 - 375
- - 10
- - 25
- - 225
- - 60
- - 150
Unit
V
V
MHz
-
ns
ns
ns
ns
ps
(*) Pulse conditions : tp < 300 µs, δ =2%
16/10/2012
COMSET SEMICONDUCTORS
3|4
Datasheet pdf - http://www.DataSheet4U.co.kr/


2N2222 Datasheet PDF
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NPN 2N2221 – 2N2221A
2N2222 – 2N2222A
MECHANICAL DATA CASE TO-18
DIMENSIONS (mm)
min max
A 12.7 -
B - 0.49
C 0.9 -
D - 5.3
E - 4.9
F - 5.8
G 2.54 -
H - 1.2
I - 1.16
L 45° -
Pin 1 :
Pin 2 :
Pin 3 :
Case :
emitter
base
Collector
Collector
www.DataSheet.net/
Revised August 2012
         
 
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any and
all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as critical
components in life support devices or systems.
 
 
www.comsetsemi.com
info@comsetsemi.com
16/10/2012
COMSET SEMICONDUCTORS
4|4
Datasheet pdf - http://www.DataSheet4U.co.kr/




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