K07N120 Datasheet PDF
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SKW07N120
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Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
Lower Eoff compared to previous generation
Short circuit withstand time – 10 µs
Designed for:
- Motor controls
- Inverter
- SMPS
NPT-Technology offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-247-3-1
(TO-247AC)
Type
SKW07N120
VCE
1200V
IC
8A
Eoff
0.7mJ
Tj
150°C
Marking Package
K07N120 PG-TO-247-3-21
Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25°C
TC = 100°C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150°C
Diode forward current
TC = 25°C
TC = 100°C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, 100V VCC 1200V, Tj 150°C
Power dissipation
TC = 25°C
Operating junction and storage temperature
Soldering temperature,
wavesoldering, 1.6mm (0.063 in.) from case for 10s
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj , Tstg
Ts
Value
1200
16.5
7.9
27
27
Unit
V
A
13
7
27
±20
10
125
-55...+150
260
V
µs
W
°C
1 J-STD-020 and JESD-022
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
1
Rev. 2_1 Apr 06


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SKW07N120
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1
2.5
40
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current1)
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
Ciss
Coss
Crss
QGate
LE
IC(SC)
VGE=0V, IC=500µA
VGE = 15V, IC=8A
Tj=25°C
Tj=150°C
VGE=0V, IF=7A
Tj=25°C
Tj=150°C
IC=350µA,VCE=VGE
VCE=1200V,VGE=0V
Tj=25°C
Tj=150°C
VCE=0V,VGE=20V
VCE=20V, IC=8A
VCE=25V,
VGE=0V,
f=1MHz
VCC=960V, IC=8A
VGE=15V
VGE=15V,tSC10µs
100VVCC1200V,
Tj 150°C
min.
1200
2.5
-
-
3
-
-
-
-
-
-
-
-
-
Value
typ.
-
3.1
3.7
2.0
1.75
4
-
-
-
6
720
90
40
70
13
75
Unit
max.
-V
3.6
4.3
2.4
5
µA
100
400
100 nA
-S
870 pF
110
50
90 nC
- nH
-A
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
Power Semiconductors
2
Rev. 2_1 Apr 06


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SKW07N120
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Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25°C,
VCC=800V,IC=8A,
VGE=15V/0V,
RG=47,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25°C,
VR=800V, IF=8A,
diF/dt=400A/µs
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
27
29
440
21
0.6
0.4
1.0
60
0.3
9
400
Unit
max.
35 ns
38
570
27
0.8 mJ
0.55
1.35
ns
µC
A
A/µs
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
min.
Value
typ.
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=150°C
VCC=800V,
IC=8A,
VGE=15V/0V,
RG=47,
Lσ1)=180nH,
Cσ1)=40pF
Energy losses include
“tail” and diode
reverse recovery.
-
-
-
-
-
-
-
30
26
490
30
1.0
0.7
1.7
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tF
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150°C
VR=800V, IF=8A,
diF/dt=500A/µs
- 170
-
-
- 1.1
- 15
- 110
1) Leakage inductance Lσ and stray capacity Cσ due to dynamic test circuit in figure E.
Unit
max.
36 ns
31
590
36
1.2 mJ
0.9
2.1
ns
µC
A
A/µs
Power Semiconductors
3
Rev. 2_1 Apr 06


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35A
Ic
30A
25A
20A TC=80°C
15A
TC=110°C
10A
5A Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 47)
150W
125W
100W
75W
50W
25W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150°C)
SKW07N120
tp=5µs
15µs
10A
50µs
200µs
1A
1ms
0.1A
DC
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 150°C)
20A
15A
10A
5A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
Power Semiconductors
4
Rev. 2_1 Apr 06


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25A
SKW07N120
25A
20A
VGE=17V
15A 15V
13V
11V
9V
10A 7V
20A
VGE=17V
15V
15A 13V
11V
9V
10A 7V
5A 5A
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
0A
0V 1V 2V 3V 4V 5V 6V 7V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
25A
20A
15A
TJ=+150°C
TJ=+25°C
10A TJ=-40°C
5A
0A
3V 5V 7V 9V 11V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
6V
IC=16A
5V
4V IC=8A
3V IC=4A
2V
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
Power Semiconductors
5
Rev. 2_1 Apr 06


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td(off)
100ns
tf
td(on)
tr
10ns
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 ,
dynamic test circuit in Fig.E )
100ns
td(off)
td(on)
tf
tr
10ns
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7,
dynamic test circuit in Fig.E )
SKW07N120
000ns
td(off)
100ns
td(on)
tf
tr
10ns
0
20406080100
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
6V
5V
4V max.
3V typ.
2V min.
1V
0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.3mA)
Power Semiconductors
6
Rev. 2_1 Apr 06


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5mJ
*) Eon and Ets include losses
due to diode recovery.
4mJ
3mJ
2mJ
Ets*
Eon*
Eoff
1mJ
0mJ
0A 5A 10A 15A 20A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 4 7 ,
dynamic test circuit in Fig.E )
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
1.5mJ
Ets*
1.0mJ
0.5mJ
Eon*
Eoff
0.0mJ
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 8A, RG = 4 7,
dynamic test circuit in Fig.E )
SKW07N120
2.5mJ
2.0mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
1.5mJ
1.0mJ
Eon*
Eoff
0.5mJ
0.0mJ
020406080100
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, IC = 8A,
dynamic test circuit in Fig.E )
100K/W
D=0.5
0.2
0.1
10-1K/W
0.05
0.02
0.01
10-2K/W
R,(K/W)
0.1020
0.40493
0.26391
0.22904
R1
τ, (s)
0.77957
0.21098
0.01247
0.00092
R2
10-3K/W
1µs
single pulse C1=τ1/ R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
Power Semiconductors
7
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20V
15V
SKW07N120
1nF
Ciss
10V UCE=960V
5V
0V
0nC 20nC 40nC 60nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC = 8A)
80nC
100pF
Coss
Crss
0V 10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
30µs
25µs
20µs
15µs
10µs
5µs
0µs
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 1200V, start at Tj = 25°C)
150A
100A
50A
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V VCE 1200V, TC = 25°C, Tj 150°C)
Power Semiconductors
8
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350ns
300ns
250ns
200ns
IF=7A
150ns
100ns
50ns
IF=3.5A
0ns
200A/µs
400A/µs
600A/µs
800A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
25A
20A IF=7A
15A
10A IF=3.5A
5A
0A
200A/µs
400A/µs
600A/µs
800A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
SKW07N120
1.50µC
1.25µC
1.00µC
IF=7A
0.75µC
0.50µC
IF=3.5A
0.25µC
0.00µC
200A/µs
400A/µs
600A/µs
800A/µs
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
300A/µs
200A/µs
100A/µs
IF=3.5A
IF=7A
0A/µs
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 800V, Tj = 150°C,
dynamic test circuit in Fig.E )
Power Semiconductors
9
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20A
15A
TJ=150°C
10A
TJ=25°C
5A
0A
0V 1V 2V 3V 4V
VF, FORWARD VOLTAGE
Figure 25. Typical diode forward current as
a function of forward voltage
SKW07N120
3.0V
2.5V
IF=14A
2.0V
1.5V
IF=7A
IF=3.5A
1.0V
0.5V
0.0V
0°C
40°C
80°C
120°C
Tj, JUNCTION TEMPERATURE
Figure 26. Typical diode forward voltage as
a function of junction temperature
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
R,(K/W)
0.75885
0.88470
0.85670
τ, (s)
0.09354
0.00543
0.00042
R1 R2
single pulse
C1=τ1/R1 C2=τ2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
Power Semiconductors
10
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PG-TO247-3-21
SKW07N120
Power Semiconductors
11
Rev. 2_1 Apr 06


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Figure A. Definition of switching times
SKW07N120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
Q
S
Q
F
10% I
rrm
t
di /dt
90% I r r
rrm
V
R
Figure C. Definition of diodes
switching characteristics
τr11
Tj (t)
p(t) r1
τ2
r2
r2
τrnn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance Lσ =180nH,
and stray capacity Cσ =40pF.
Power Semiconductors
12
Rev. 2_1 Apr 06


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SKW07N120
Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of
that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
Power Semiconductors
13
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