Infineon Technologies Electronic Components Datasheet


K06N60

Fast IGBT


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SKP06N60
SKA06N60
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled
Diode
75% lower Eoff compared to previous generation
combined with low conduction losses
Short circuit withstand time – 10 s
Designed for: Motor controls, Inverter
NPT-Technology for 600V applications offers:
- very tight parameter distribution
- high ruggedness, temperature stable behaviour
- parallel switching capability
Very soft, fast recovery anti-parallel Emitter Controlled
Diode
PG-TO-220-3-1
(TO-220AB)
Isolated TO-220, 2.5kV, 60s
Pb-free lead plating; RoHS compliant
Qualified according to JEDEC1 for target applications
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
C
G
E
PG-TO-220-3-31 / -111
(FullPAK)
Type
SKP06N60
SKA06N60
VCE IC VCE(sat) Tj Marking Package
600V
6A
2.3V
150C K06N60 PG-TO-220-3-1
600V
5A
2.3V
150C K06N60 PG-TO-220-3-31 / -111
1 J-STD-020 and JESD-022
1
Rev. 2.4 12.06.2013


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Maximum Ratings
Parameter
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area VCE 600V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2
VGE = 15V, VCC 600V, Tj 150C
Power dissipation
TC = 25C
Mounting Torque, Screw: M2.5 (Fullpak), M3 (TO220)3
Operating junction and storage temperature
Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s
SKP06N60
SKA06N60
Symbol
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
M
Tj , Tstg
Ts
Value
Unit
SKP06N60 SKA06N60
600 600 V
A
12 9
6.9 5.0
24 24
24 24
12 12
66
24 24
20 20 V
s
10 10
W
68 32
0.6 0.5 Nm
-55...+150 -55...+150 C
260 260 °C
2 Allowed number of short circuits: <1000; time between short circuits: >1s.
3 Maximum mounting processes: 3
2
Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol Conditions
Max. Value
Unit
SKP06N60 SKA06N60
RthJC
RthJCD
RthJA
PG-TO-220-3-1
PG-TO220-3-31 /-111
1.85
3.5
62
3.9 K/W
5.0
65
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Symbol
Conditions
min.
Value
Typ.
Unit
max.
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
IGES
gfs
VGE=0V, IC=500A
VGE = 15V, IC=6A
Tj=25C
Tj=150C
VGE=0V, IF=6A
Tj=25C
Tj=150C
IC=250A,VCE=VGE
VCE=600V,VGE=0V
Tj=25C
Tj=150C
VCE=0V,VGE=20V
VCE=20V, IC=6A
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Ciss
Coss
Crss
QGate
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current2)
LE
IC(SC)
VCE=25V,
VGE=0V,
f=1MHz
VCC=480V, IC=6A
VGE=15V
VGE=15V,tSC10s
VCC 600V,
Tj 150C
600
1.7
-
1.2
-
3
-
-
-
-
-
-
-
-
-
-
-
2.0
2.3
1.4
1.25
4
-
-
-
4.2
350
38
23
32
7
60
-V
2.4
2.8
1.8
1.65
5
A
20
700
100 nA
-S
420 pF
46
28
42 nC
- nH
-A
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
3
Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,
R G =50,
L1) =180nH,
C1) =250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=200V, IF=6A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
25
18
220
54
0.110
0.105
0.215
30
22
264
65
0.127
0.137
0.263
ns
mJ
200 - ns
17 -
183 -
200 - nC
2.8 - A
180 - A/s
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
tS
tF
Qrr
Irrm
dirr/dt
Tj=150C
VCC=400V,IC=6A,
VGE=0/15V,
RG=50,
L1)=180nH,
C1)=250pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=200V, IF=6A,
diF/dt=200A/s
min.
-
-
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
Unit
max.
24
17
248
70
0.167
0.153
0.320
29
20
298
84
0.192
0.199
0.391
ns
mJ
290 - ns
27 -
263 -
500 - nC
5.0 - A
200 - A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
4 Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
SKP06N60
Ic
30A SKA06N60
20A
TC=80°C
TC=110°C
10A
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 400V,
VGE = 0/+15V, RG = 50)
tp=2s
10A 15s
50s
1A 200s
0.1A
1V
SKP06N60
SKA06N60
10V 100V
1ms
DC
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C, Tj 150C)
80W
SKP06N60
60W
40W
SKA06N60
20W
0W
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150C)
SKP06N60
10A
SKA06N60
5A
0A
25°C 50°C 75°C 100°C 125°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
5 Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
20A 20A
15A
VGE=20V
10A 15V
13V
11V
9V
5A 7V
5V
15A
VGE=20V
15V
13V
10A 11V
9V
7V
5V
5A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25C)
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150C)
20A
18A Tj=+25°C
16A -55°C
+150°C
14A
12A
10A
8A
6A
4A
2A
0A
0V 2V 4V 6V 8V 10V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 10V)
4.0V
3.5V
IC = 12A
3.0V
2.5V
IC = 6A
2.0V
1.5V
1.0V
-50°C 0°C 50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
6 Rev. 2.4 12.06.2013


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td(off)
100ns
t
f
SKP06N60
SKA06N60
td(off)
100ns
tf
td(on)
tr
10ns
0A 3A 6A 9A 12A 15A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 50,
Dynamic test circuit in Figure E)
td(on)
tr
10ns
0
50
100
150
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)
5.5V
5.0V
4.5V
4.0V
3.5V
3.0V
max.
typ.
2.5V
m in.
2.0V
-50°C 0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.25mA)
7 Rev. 2.4 12.06.2013


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0.8mJ
*) Eon and Ets include losses
due to diode recovery.
0.6mJ
Ets*
0.4mJ
0.2mJ
Eon*
E off
SKP06N60
SKA06N60
0.6mJ
*) Eon and Ets include losses
due to diode recovery.
Ets*
0.4mJ
0.2mJ
E o ff
E*
on
0.0mJ
0A 3A 6A 9A 12A 15A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, RG = 50,
Dynamic test circuit in Figure E)
0.4mJ
*) Eon and Ets include losses
due to diode recovery.
0.3mJ
Ets*
0.0mJ
0
50
100
150
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, Tj = 150C, VCE = 400V,
VGE = 0/+15V, IC = 6A,
Dynamic test circuit in Figure E)
0.2mJ
0.1mJ
Eon*
Eoff
0.0mJ
0°C
50°C
100°C
150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 400V, VGE = 0/+15V,
IC = 6A, RG = 50,
Dynamic test circuit in Figure E)
8 Rev. 2.4 12.06.2013


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25V
20V
120V
480V
15V
10V
5V
0V
0nC
15nC
30nC
QGE, GATE CHARGE
Figure 16. Typical gate charge
(IC = 6A)
45nC
25s
SKP06N60
SKA06N60
1nF
C iss
100pF
Coss
C
rss
10pF
0V
10V 20V 30V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 17. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
100A
20s
80A
15s
60A
10s
40A
5s 20A
0s
10V 11V 12V 13V 14V 15V
VGE, GATE-EMITTER VOLTAGE
Figure 18. Short circuit withstand time as a
function of gate-emitter voltage
(VCE = 600V, start at Tj = 25C)
0A
10V 12V 14V 16V 18V 20V
VGE, GATE-EMITTER VOLTAGE
Figure 19. Typical short circuit collector
current as a function of gate-emitter voltage
(VCE 600V, Tj = 150C)
9 Rev. 2.4 12.06.2013


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500ns
400ns
300ns
200ns
100ns
IF = 12A
IF = 3A
IF = 6A
0ns
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s
d i F / d t , DIODE CURRENT SLOPE
Figure 20. Typical reverse recovery time as
a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
12A
10A
8A IF = 12A
6A IF = 6A
IF = 3A
4A
2A
0A
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s
d i F / d t , DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery current
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
SKP06N60
SKA06N60
1000nC
800nC
600nC
400nC
IF = 12A
IF = 6A
IF = 3A
200nC
0nC
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s
d i F / d t , DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery charge
as a function of diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
600A/s
500A/s
400A/s
300A/s
200A/s
100A/s
0A/s
50A/s 150A/s 250A/s 350A/s 450A/s 550A/s
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(VR = 200V, Tj = 125C,
Dynamic test circuit in Figure E)
10 Rev. 2.4 12.06.2013


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12A
10A
8A
6A 150°C
100°C
4A
25°C
2A -55°C
0A
0.0V
0.5V
1.0V
1.5V
2.0V
VF, FORWARD VOLTAGE
Figure 24. Typical diode forward current as
a function of forward voltage
SKP06N60
SKA06N60
2.0V
1.5V
I F = 12A
IF = 6A
1.0V
-40°C 0°C 40°C 80°C 120°C
Tj, JUNCTION TEMPERATURE
Figure 25. Typical diode forward voltage as
a function of junction temperature
D=0.5
100K/W 0.2
0.1
0.05
0.02
10-1K/W
0.01
SKP06N60
R,(K/W)
0.523
0.550
0.835
1.592
R1
, (s)
7.25*10-2
6.44*10-3
7.13*10-4
7.16*10-5
R2
single pulse
10-2K/W
1µs
C1=1/R1 C2=2/R2
10µs 100µs 1ms 10ms 100ms
1s
tp, PULSE WIDTH
Figure 26. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
101K/W
D=0.5
0.2
100K/W
0.1
0.05
0.02
10-1K/W
0.01
SKA06N60
R,(K/W)
2.852
0.654
0.665
0.828
R1
, (s)
1.887
4.64*10-2
2.88*10-3
3.83*10-4
R2
single pulse
C1=1/R1 C2=2/R2
10-2K/W
10µs 100µs 1ms 10ms 100ms 1s
10s
tp, PULSE WIDTH
Figure 27. Diode transient thermal
impedance as a function of pulse width
(D = tp / T)
11 Rev. 2.4 12.06.2013


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D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
0.02
0.01
10-2K/W
SKP06N60
R,(K/W)
0.705
0.561
0.583
, (s)
0.0341
3.74E-3
3.25E-4
R1 R2
single pulse
10-3K/W
1µs
C1=1/R1 C2=2/R2
10µs 100µs 1ms 10ms 100ms
tp, PULSE WIDTH
Figure 28. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
1s
SKP06N60
SKA06N60
101K/W
D=0.5
100K/W 0.2
0.1
0.05
10-1K/W 0.02
0.01
10-2K/W
SKA06N60
R,(K/W)
2.73
0.395
0.353
0.323
, (s)
1.83
2.93*10-2
2.46*10-3
3.45*10-4
R1 R2
10-3K/W
1µs
single pulse
10µs 100µs
C1=1/R1 C2=2/R2
1ms 10ms 100ms 1s
tp, PULSE WIDTH
Figure 29. IGBT transient thermal
impedance as a function of pulse width
(D = tp / T)
10s
12 Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
PG-TO220-3-1
13 Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
Please refer to mounting instructions
14
Rev. 2.4 12.06.2013


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Figure A. Definition of switching times
i,v
I
F
di /dt
F
I
rrm
SKP06N60
SKA06N60
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
QQ
SF
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure C. Definition of diodes
switching characteristics
1
r1
Tj (t)
p(t) r1
2
r2
r2
n
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit
Leakage inductance L=180nH
an d Stray capacity C=250pF.
15 Rev. 2.4 12.06.2013


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SKP06N60
SKA06N60
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
16 Rev. 2.4 12.06.2013




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