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IGA03N120H2
HighSpeed 2-Technology
Designed for:
- TV – Horizontal Line Deflection
2nd generation HighSpeed-Technology
for 1200V applications offers:
- loss reduction in resonant circuits
- temperature stable behavior
- parallel switching capability
- tight parameter distribution
- Eoff optimized for IC =3A
- simple Gate-Control
C
G
E
P-TO220-3-31
(FullPAK)
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
P-TO220-3-34
(FullPAK)
Type
VCE
IC
Eoff
Tj,max
Marking
Package
Ordering Code
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-31 Q67040-S4648
IGA03N120H2 1200V 3A 0.15mJ 150°C G03H1202 P-TO-220-3-34 Q67040-S4654
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DataSheet4U.comVC E
Triangular collector peak current (VGS = 15V)
ICpk
TC = 100°C, f = 32kHz
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
ICpuls
-
VCE 1200V, Tj 150°C
Gate-emitter voltage
VGE
Power dissipation
Ptot
TC = 25°C
Operating junction and storage temperature
Soldering temperature, 1.6mm (0.063 in.) from case for 10s
Tj , Tstg
-
Value
1200
8.2
9
9
±20
29
-40...+150
260
Unit
V
A
V
W
°C
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Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJA
Conditions
P-TO-220-3-31
P-TO-220-3-34
Max. Value
4.3
64
Unit
K/W
Electrical Characteristic, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
Internal emitter inductance
measured 5mm (0.197 in.) from case
V(BR)CES VGE=0V, IC=300µA
VCE(sat) VGE = 15V, IC=3A
Tj=25°C
Tj=150°C
VGE = 10V, IC=3A,
Tj=25°C
VGE(th) IC=90µA,VCE=VGE
I C E S DataSVhCeEe=t41U2.0c0oVm, V G E = 0V
Tj=25°C
Tj=150°C
IGES
VCE=0V,VGE=20V
gfs VCE=20V, IC=3A
Ciss
Coss
Crss
QGate
LE
VCE=25V
VGE=0V
f=1MHz
VCC=960V, IC=3A
VGE=15V
P-TO-220-3-31
min.
1200
-
-
-
2.1
-
-
-
-
-
-
-
-
-
Value
Unit
Typ. max.
- -V
2.2 2.8
2.5 -
2.4 -
3 3.9
µA
- 20
- 80
- 100 nA
2 -S
205 - pF
24 -
7-
8.6 - nC
7 - nH
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Switching Characteristic, Inductive Load, at Tj=25 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Tj=25°C
VCC=800V, IC=3A
VGE=0V/15V
RG=82
L σ 1) = 1 8 0 n H
Cσ1)=40pF
Energy losses include
“tail” and diode 2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.2
5.2
281
29
0.14
0.15
0.29
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Characteristic, Inductive Load, at Tj=150 °C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
td(on)
Tj=150°C
tr VCC=800V, IC=3A
td(of
tf
Eon
Eoff
f
)DataSVRhGGeE=e=8t402UV./c1o5mV
Lσ1)=180nH
Cσ1)=40pF
Energy losses
include
E t s “tail” and diode2)
reverse recovery.
min.
-
-
-
-
-
-
-
Value
Typ.
9.4
6.7
340
63
0.22
0.26
0.48
Unit
max.
- ns
-
-
-
- mJ
-
-
Switching Energy ZVT, Inductive Load
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-off energy
Eoff VCC=800V, IC=3A
VGE=0V/15V
RG=82, Cr1)=4nF
Tj=25°C
Tj=150°C
min.
-
-
Value
typ.
0.05
0.09
Unit
max.
mJ
-
-
DataShee
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2
)
)
Leakage inductance Lσ and stray capacity Cσ due
Commutation diode from device IKP03N120H2
to
dynamic
test
circuit
in
figure
E
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12A
Ic
10A
8A
6A TC=25°C
4A TC=100°C
2A Ic
10A
1A
0,1A
t p = 1 0 µs
2 0 µs
5 0 µs
1 0 0 µs
1ms
100ms
DC
0A
10Hz 100Hz 1kHz 10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150°C, D = 0.5, VCE = 800V,
VGE = +15V/0V, RG = 82)
0,01A 1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25°C, Tj 150°C)
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30W
8A
20W
10W
6A
4A
2A
0W
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(Tj 150°C)
0A
25°C 50°C 75°C 100°C 125°C 150°C
TC, CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(VGE 15V, Tj 150°C)
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10A
10A
8A
VGE=15V
12V
6A
10V
8V
4A 6V
8A
VGE=15V
6A 12V
10V
8V
4A 6V
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristics
(Tj = 25°C)
2A
0A
0V 1V 2V 3V 4V 5V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristics
(Tj = 150°C)
12A DataSheet4U.co3mV
10A
8A Tj=+150°C
T =+25°C
6A j
IC=6A
IC=3A
2V
IC=1.5A
4A 1V
2A
0A
3V 5V 7V 9V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(VCE = 20V)
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(VGE = 15V)
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1000ns
100ns
td(off)
tf
10ns
td(on)
1000ns
td(off)
100ns
10ns
tf
td(on)
1ns
0A
tr
2A
4A
1ns
0
tr
50
100
150
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 9. Typical switching times as a
Figure 10. Typical switching times as a
function of collector current
function of gate resistor
(inductive load, Tj = 150°C,
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E)
dynamic test circuit in Fig.E)
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1000ns
td(off)
100ns
tf
10ns
td(on)
tr
1ns
25°C 50°C 75°C 100°C 125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82,
dynamic test circuit in Fig.E)
DataSheet4U.com
5V
4V
3V max.
typ.
2V
m in.
1V
0V
-50°C
0°C
50°C 100°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(IC = 0.09mA)
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1.0mJ
1) Eon and Ets include losses
due to diode recovery.
Ets1
0.7mJ
1) Eon and Ets include losses
due to diode recovery.
0.6mJ
Ets1
0.5mJ
0.5mJ
Eoff
0.4mJ
Eon1
0.0mJ
0A 2A 4A
0.3mJ Eoff
0.2mJ Eon1
050100150200250
IC, COLLECTOR CURRENT
RG, GATE RESISTOR
Figure 13. Typical switching energy losses
Figure 14. Typical switching energy losses
as a function of collector current
as a function of gate resistor
(inductive load, Tj = 150°C,
(inductive load, Tj = 150°C,
VCE = 800V, VGE = +15V/0V, RG = 82,
VCE = 800V, VGE = +15V/0V, IC = 3A,
dynamic test circuit in Fig.E )
dynamic test circuit in Fig.E )
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0.5mJ
1) Eon and Ets include losses
due to diode recovery.
0.4mJ
Ets1
0.3mJ
0.2mJ
Eoff
Eon1
0.1mJ
25°C
80°C
125°C 150°C
Tj, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load, VCE = 800V,
VGE = +15V/0V, IC = 3A, RG = 82,
dynamic test circuit in Fig.E )
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0.16mJ
IC=3A, TJ=150°C
0.12mJ
0.08mJ
IC=1A, TJ=150°C
IC=3A, TJ=25°C
0.04mJ
0.00mJ
0V/us
IC=1A, TJ=25°C
1000V/us 2000V/us 3000V/us
dv/dt, VOLTAGE SLOPE
Figure 16. Typical turn off switching energy
loss for soft switching
(dynamic test circuit in Fig. E)
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1nF
20V
100pF
C iss
C oss
10pF
C rss
0V
10V
20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 19. Typical capacitance as a
function of collector-emitter voltage
(VGE = 0V, f = 1MHz)
30V
15V UCE=240V
10V
UCE=960V
5V
0V
0nC
10nC
20nC
QGE, GATE CHARGE
Figure 18. Typical gate charge
(IC = 3A)
30nC
101K/W
D=0.5 0.1
0.2
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100K/W
10-1K/W
R,(K/W)
1,4285
1,8838
0.05
0,4057
0,4234
0.02
0,3241
0.01
0,1021
0,1340
τ, (s)
5,2404
1,7688
0,07592
0,005018
0,000595
0,000126
0,000018
10-2K/W
single pulse
R1
R2
C1=τ1/R1 C2=τ2/R2
1µs 10µs 100µs 1ms 10ms100ms 1s 10s
tP, PULSE WIDTH
Figure 17. IGBT transient thermal
impedance as a function of pulse width
(D=tP/T)
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1: Gate
2: Collector
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TO-220-3-31 (FullPAK)
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
T
dimensions
[mm]
[inch]
min max
min
max
10.37
10.63
0.4084
0.4184
15.86
16.12
0.6245
0.6345
0.65
0.78
0.0256
0.0306
2.95 typ.
0.1160 typ.
3.15 3.25 0.124 0.128
6.05
6.56
0.2384
0.2584
13.47
13.73
0.5304
0.5404
3.18 3.43 0.125 0.135
0.45
0.63
0.0177
0.0247
1.23
1.36
0.0484
0.0534
2.54 typ.
0.100 typ.
4.57
4.83
0.1800
0.1900
2.57
2.83
0.1013
0.1113
2.51
2.62
0.0990
0.1030
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TO-220-3-34 (FullPAK)
symbol
A
B
C
D
E
F
G
H
K
L
M
N
P
T
U
dimensions
[mm]
[inch]
min max
min
max
10.37
10.63
0.4084
0.4184
15.86
16.12
0.6245
0.6345
0.65
0.78
0.0256
0.0306
2.95 typ.
0.1160 typ.
3.15 3.25 0.124 0.128
6.05
6.56
0.2384
0.2584
8.28 8.79 0.326 0.346
3.18 3.43 0.125 0.135
0.45
0.63
0.0177
0.0247
1.23
1.36
0.0484
0.0534
2.54 typ.
0.100 typ.
4.57
4.83
0.1800
0.1900
2.57
2.83
0.1013
0.1113
2.51
2.62
0.0990
0.1030
5.00 typ.
0.197 typ.
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Published by
Infineon Technologies AG i Gr.,
Bereich Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office in Germany or our Infineon Technologies Representatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written
approval of Infineon Technologies, if
that life-support device or system, or
a failure
to affect
othfesusDcaahfetctayoSmohrpeeofenfeet4cntUtisv.eccnaoenmsrseoafstohnaatbdlyevbiceeeoxrpesycstetedmto.
cause the failure of
Life support devices
or
systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect
human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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