2N2222A Datasheet PDF
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2N2219A
® 2N2222A
HIGH SPEED SWITCHES
PRELIMINARY DATA
DESCRIPTION
The 2N2219A and 2N2222A are silicon Planar
Epitaxial NPN transistors in Jedec TO-39 (for
2N2219A) and in Jedec TO-18 (for 2N2222A)
)metal case. They are designed for high speed
t(sswitching application at collector current up to
c500mA, and feature useful current gain over a
uwide range of collector current, low leakage
Prodcurrents and low saturation voltage.
TO-18
TO-39
- ObsoleteINTERNAL SCHEMATIC DIAGRAM
solete Product(s)ABSOLUTE MAXIMUM RATINGS
ObSymbol
Parameter
Value
Unit
VCBO Collector-Base Voltage (IE = 0)
75 V
VCEO Collector-Emitter Voltage (IB = 0)
40 V
VEBO Emitter-Base Voltage (IC = 0)
6V
IC Collector Current
0.6 A
ICM Collector Peak Current (tp < 5 ms)
Ptot Total Dissipation at Tamb 25 oC
for 2N2219A
for 2N2222A
at TC 25 oC
for 2N2219A
for 2N2222A
Tstg Storage Temperature
Tj Max. Operating Junction Temperature
0.8
0.8
0.5
3
1.8
-65 to 175
175
A
W
W
W
W
oC
oC
February 2003
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2N2219A / 2N2222A
THERMAL DATA
Rthj-case Thermal Resistance Junction-Case
Rthj-amb Thermal Resistance Junction-Ambient
Max
Max
TO-39
50
187.5
TO-18
83.3
300
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 60 V
VCB = 60 V Tj = 150 oC
10 nA
10 µA
ICEX Collector Cut-off
Current (VBE = -3V)
t(s)IBEX Base Cut-off Current
(VBE = -3V)
ucIEBO
Emitter Cut-off Current
(IC = 0)
rodV(BR)CBO Collector-Base
Breakdown Voltage
P(IE = 0)
teV(BR)CEOCollector-Emitter
leBreakdown Voltage
(IB = 0)
ObsoV(BR)EBO
Emitter-Base
Breakdown Voltage
(IC = 0)
-VCE(sat)Collector-Emitter
)Saturation Voltage
t(sVBE(sat)Base-Emitter
cSaturation Voltage
uhFEDC Current Gain
solete ProdhfeSmall Signal Current
Ob Gain
VCE = 60 V
VCE = 60 V
VEB = 3 V
IC = 10 µA
IC = 10 mA
IE = 10 µA
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
IC = 150 mA IB = 15 mA
IC = 500 mA IB = 50 mA
IC = 0.1 mA
IC = 1 mA
IC = 10 mA
IC = 150 mA
IC = 500 mA
IC = 150 mA
IC = 10 mA
Tamb = -55 oC
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 10 V
VCE = 1 V
VCE = 10 V
IC = 1 mA VCE = 10 V f = 1KHz
IC = 10 mA VCE = 10 V f = 1KHz
75
40
6
0.6
35
50
75
100
40
50
35
50
75
10 nA
20 nA
10 nA
V
V
V
0.3 V
1V
1.2 V
2V
300
300
375
fT Transition Frequency IC = 20 mA VCE = 20 V
300 MHz
f = 100 MHz
CEBO
Emitter-Base
Capacitance
IC = 0 VEB = 0.5 V f = 100KHz
25 pF
CCBO
Collector-Base
Capacitance
IE = 0 VCB = 10 V f = 100 KHz
8 pF
Re(hie) Real Part of Input
Impedance
IC = 20 mA
f = 300MHz
* Pulsed: Pulse duration = 300 µs, duty cycle 1 %
VCE = 20 V
60
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2N2219A / 2N2222A
ELECTRICAL CHARACTERISTICS (continued)
Symbol
Parameter
Test Conditions
Min. Typ. Max. Unit
NF Noise Figure
IC = 0.1 mA VCE = 10 V
f = 1KHz Rg = 1K
hie Input Impedance
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
hre Reverse Voltage Ratio IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
4 dB
2
0.25
8
1.25
8
4
k
k
10-4
10-4
hoe Output Admittance
IC = 1 mA VCE = 10 V
IC = 10 mA VCE = 10 V
5 35 µS
25 200 µS
td∗∗ Delay Time
VCC = 30 V IC = 150 mA
IB1 = 15 mA VBB = -0.5 V
t(s)tr∗∗ Rise Time
VCC = 30 V IC = 150 mA
IB1 = 15 mA VBB = -0.5 V
ducts∗∗ Storage Time
VCC = 30 V IC = 150 mA
IB1 = -IB2 = 15 mA
rotf∗∗ Fall Time
VCC = 30 V IC = 150 mA
IB1 = -IB2 = 15 mA
Prbb’ Cb’c Feedback Time
teConstant
IC = 20 mA VCE = 20 V
f = 31.8MHz
lePulsed: Pulse duration = 300 µs, duty cycle 1 %
Obsolete Product(s) - Obso∗∗See testcircuit
10 ns
25 ns
225 ns
60 ns
150 ps
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2N2219A / 2N2222A
Test Circuit fot td, tr.
olete Product(s)PULSE GENERATOR :
str 20 ns
bPW 200 ns
ZIN = 50
Obsolete Product(s) - OTest Circuit fot td, tr.
TO OSCILLOSCOPE
tr 5.0 ns
ZIN < 100 K
CIN 12 pF
PULSE GENERATOR :
PW 10 µs
ZIN = 50
TC 5.0 ns
TO OSCILLOSCOPE :
tr < 5.0 ns
ZIN > 100 K
CIN 12 pF
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2N2219A / 2N2222A
TO-18 MECHANICAL DATA
DIM.
MIN.
mm
TYP.
MAX.
MIN.
inch
TYP.
MAX.
A 12.7
0.500
B 0.49 0.019
)D
ct(sE
duF
ProG 2.54
leteH
soI
- ObL 45o
lete Product(s)G
soI
Ob H
5.3
4.9
5.8
0.100
1.2
1.16
45o
0.208
0.193
0.228
0.047
0.045
DA
L
C
0016043
5/7


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2N2219A / 2N2222A
TO-39 MECHANICAL DATA
DIM.
MIN.
mm
TYP.
MAX.
MIN.
inch
TYP.
MAX.
A 12.7
0.500
B 0.49 0.019
)D
ct(sE
duF
ProG 5.08
leteH
soI
- ObL
lete Product(s)G
bsoI
OH
6.6
8.5
9.4
0.200
1.2
0.9
45o (typ.)
0.260
0.334
0.370
0.047
0.035
DA
L
P008B
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2N2219A / 2N2222A
Obsolete Product(s) - Obsolete Product(s)
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
The ST logo is a trademark of STMicroelectronics
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved
STMicroelectronics GROUP OF COMPANIES
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