Siemens Electronic Components Datasheet


Q-62702-G66

GaAs MMIC (Variable gain amplifier MMIC-Amplifier for mobile communication Typical Gain Control range over 50dB)


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CGY 121 A
GaAs MMIC
Preliminary Datasheet
l Variable gain amplifier
(MMIC-Amplifier) for mobile communication
l Typical Gain Control range over 50dB
l Positive Control Voltage
l 50input and output matched
l Low power consumption
l Operating voltage range: 2.7 to 6 V
l Frequency range 800 MHz ... 2.5 GHz
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Vcontrol
6
RF-in; -Vg
RF-GND
4
5
1
Vd2; RF-out
2
RF-GND
3
Vd1
Type
CGY 121 A
Marking
Y9S
Ordering code
(taped)
Q-62702-G66
Package1)
MW-6
Maximum ratings
Characteristics
Drain voltage
Neg. supply voltage
Pos. control voltage
Channel temperature
Storage temperature range
Total power dissipation (TS < 81°C) 2)
Symbol
VD
VG
Vcon
TCh
Tstg
Ptot
Thermal resistance
Characteristics
Channel-soldering point (GND)
Symbol
RthChS
1) Dimensions see page 9.
2) Please care for sufficient heat dissipation on the pcb!
*) Pin-out changed compared to CGY120: 180° rotation
max. Value
8
-8
4
150
-55...+150
550
max. Value
125
Unit
V
V
V
°C
°C
mW
Unit
K/W
Siemens Aktiengesellschaft
Semiconductor Group
1
1
23.06.98
HL HF PE GaAs1
1998-11-01


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CGY 121 A
Functional block diagram:
Pin / -VG(4)
Vcon (6)
Control
Circuit
VD1 (3)
VD2 (1)
Pout (1)
GND (2, 5)
Pin #
1
2
3
4
5
6
Name Configuration
VD2 / Drain voltage 2nd stage / RF-0utput
Pout
RF-Gnd
VD1 Drain voltage 1st stage
VG / Pin Negative voltage at current control circuit (-4V) / RF-Input
RF-Gnd
Vcontrol Positive voltage for gain control (0V....3V)
Siemens Aktiengesellschaft
Semiconductor Group
2
2
23.06.98
HL HF PE GaAs1
1998-11-01


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CGY 121 A
Electrical characteristics
(TA = 25°C, f = 900 MHz, Vg = -4V, RS = RL = 50 unless otherwise specified)
Characteristics
Symbol min typ max
Power Gain
Vd=3V; I=45mA; Vcon=3V
G 17 19 -
Input return loss
Vd=3V; I=45mA; Vcon=3V
RLin
-
11
-
Output return loss
Vd=3V; I=45mA; Vcon=3V
RLout
-
10
-
Gain Control Range
Vcon=3 V ... 0V; Vd=3V; I=45mA
dG 48 53
-
1dB gain compression
Vd=3V; I=45mA; Vcon=3V
P1dB
-
14
-
Unit
dB
dB
dB
dB
dBm
Electrical characteristics
(TA = 25°C ,f = 1800 MHz, Vg=-4V, RS = RL = 50 unless otherwise specified)
Characteristics
Symbol min typ max
Power Gain
Vd=3V; I=45mA; Vcon=3V
G
15.5
17.5
-
Input return loss
Vd=3V; I=45mA; Vcon=3V
RLin
-
10
-
Output return loss
Vd=3V; I=45mA; Vcon=3V
RLout
-
8.5
-
Gain Control Range
Vcon=3 V ... 0V; Vd=3V; I=45mA
dG 48 53
-
1dB gain compression
Vd=3V; I=45mA; Vcon=3V
P1dB
-
14
-
Unit
dB
dB
dB
dB
dBm
DC characteristics
Characteristics
Gate current (Pin 4)
Vg=-4V
Control current (Pin 6)
Vg=-4V; Vcon=0V...3V
Supply current
Vg = -4V; Vcon = 3V
Symbol min
typ
max
Unit
Ig - 1.0 - mA
Ic - 0.5 - mA
Id - 45 - mA
Siemens Aktiengesellschaft
Semiconductor Group
3
3
23.06.98
HL HF PE GaAs1
1998-11-01


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CGY 121 A
Application Circuit
f = 900 MHz
Vd
C3 R2
R3
C4
L1
3
L2
Input
4 CGY121 1
Output
50 Ohm C1
6
2,5
C2 50 Ohm
R1
C5
Vg GND
Vcontrol
C1
R1
C5
C3
L1 R2
L2
C2 R3
C4
Siemens Aktiengesellschaft
Semiconductor Group
4
4
23.06.98
HL HF PE GaAs1
1998-11-01


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CGY 121 A
Parts List
Frequency
C1, C2 (Siemens Size 0603)
C3, C4 (Siemens Size 0603)
C5 (Siemens Size 0603)
L1 (Coilcraft 0805CS-150XKBC)
L2 (Coilcraft 0805CS-270XMBC)
R1 (Siemens B 54102-A1271-J60)
R2 (Siemens B 54102-A1120-J60)
R3
Application Circuit
f = 1900 MHz
900 MHz
22 pF
100 nF
47 nF
15 nH
27 nH
270 Ohm
12 Ohm
6.8 Ohm
0603
0603
0603
0805
0805
0805
0805
0805
Vd
C6
Input
50 Ohm C1
R1
C3 R2
3
4 CGY121 1
6
2,5
R3
C4
L1
Output
C2 50 Ohm
C5
Vg GND
Vcontrol
Siemens Aktiengesellschaft
Semiconductor Group
5
5
23.06.98
HL HF PE GaAs1
1998-11-01


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CGY 121 A
Parts List
Frequency
C1, C2 (Siemens size 0603)
C3, C4 (Siemens size 0603)
C5 (Siemens size 0603)
C6 (Siemens size 0603)
L1 (Coilcraft 0805CS-150XKBC)
R1 (Siemens B 54102-A1271-J60)
R2 (Siemens B 54102-A1120-J60)
R3
1900 MHz
12 pF
100 nF
47 nF
1.2 pF
15 nH
270 Ohm
12 Ohm
2.7 Ohm
0603
0603
0603
0603
0805
0805
0805
0805
Siemens Aktiengesellschaft
Semiconductor Group
6
6
23.06.98
HL HF PE GaAs1
1998-11-01


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CGY 121 A
Gain vs. Vcontrol
Operating Conditions : Vd=3V, Vg=-4V, f = 1.9GHz, Pin=-10dBm
30
20
10
0
-10
-20
Gain [dB] -20° C
-30 Gain [dB] +25° C
Gain [dB] +70° C
-40
0 0,5 1 1,5 2 2,5 3 3,5
Vcontrol [V]
Total Power Dissipation Ptot = f(Ts)
Ptotmax in mW
700
600 Ptotmax
500
81°C
400
300
200
100
0
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140 150
Soldering Point Temperature Ts in °C
Siemens Aktiengesellschaft
Semiconductor Group
7
7
23.06.98
HL HF PE GaAs1
1998-11-01


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Semiconductor Device Outline MW-6
CGY 121 A
Published by Siemens AG, Bereich Halbleiter, Marketing-Kommunikation,
Balanstraße 73, D-81541 München.
copyright Siemens AG 1997. All Rights Reserved.
As far as patents or other rights of third parties are concerned, liability is only assumed for
components per se, not for applications, processes and cirucits implemented within
components or assemblies.
The information describes the type of component and shall not be considered as assured
characteristics.
Terms of delivery and rights to change design reserved.
For questions on technology, delivery, and prices please contact the Offices of
Semiconductor Group in Germany or the Siemens Companies and Representatives
worldwide (see address list).
Due to technical requirements components may contain dangerous substances. For
information on the type in question please contact your nearest Siemens Office,
Semiconductor Group.
Siemens AG is an approved CECC manufacturer.
Siemens Aktiengesellschaft
Semiconductor Group
8
8
23.06.98
HL HF PE GaAs1
1998-11-01




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