Fairchild Semiconductor Electronic Components Datasheet



J108

N-Channel Switch


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J108/J109/J110/MMBFJ108
N-Channel Switch
• This device is designed for digital switching
applications where very low on resistance is
mandatory.
• Sourced from Process 58.
3
1 TO-92
1. Drain 2. Source 3. Gate
2
1 SuperSOT-3
Marking: I8
1. Drain 2. Source 3. Gate
Absolute Maximum Ratings * TA=25°C unless otherwise noted
Symbol
Parameter
VDG Drain-Gate Voltage
VGS Gate-Source Voltage
IGF Forward Gate Current
TJ, Tstg
Operating and Storage Junction Temperature Range
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Value
25
-25
10
-55 ~ +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
mA
°C
Electrical Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
V(BR)GSS
IGSS
VGS(off)
Gate-Source Breakdwon Voltage
Gate Reverse Current
Gate-Source Cutoff Voltage
IG = -10µA, VDS = 0
VGS = -15V, VDS = 0
VGS = -15V, VDS = 0, TA = 100°C
VDS = 15V, ID = 10nA
108
109
110
On Characteristics
IDSS
Zero-Gate Voltage Drain Current * VDS = 15V, IGS = 0
108
109
110
rDS(on)
Drain-Source On Resistance
VDS 0.1V, VGS = 0
108
109
110
Small Signal Characteristics
Cdg(on)
Csg(off)
Drain Gate & Source Gate On
Capacitance
Cdg(on)
Drain-Gate Off Capacitance
Csg(off)
Source-Gate Off Capacitance
* Pulse Test: Pulse Width 300µs, Duty Cycle 2.0%
VDS = 0, VGS = 0, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
VDS = 0, VGS = -10, f = 1.0MHz
Min. Max. Units
-25
-3.0
-200
-3.0 -10
-2.0 -6.0
-0.5 -4.0
V
nA
nA
V
V
V
80 mA
40 mA
10 mA
8.0
12
18
85 pF
15 pF
15 pF
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002


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Thermal Characteristics TA=25°C unless otherwise noted
Symbol
Parameter
PD Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
* Device mounted on FR-4 PCB 1.6” × 1.6” × 0.06"
Max.
J108 - 110
*MMBFJ108
625 350
5.0 2.8
125
357 556
Units
mW
mW/°C
°C/W
°C/W
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002


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Typical Characteristics
Common Drain-Source
100
V GS = 0 V
- 2.0 V
80
- 1.0 V
- 3.0 V
60
40
20
0
0
- 4.0 V
- 5.0 V
TA = 25°C
TYP V GS(off) = - 5.0 V
0.4 0.8 1.2 1.6
VDS - DRAIN-SOURCE VOLTAGE (V)
2
Figure 1. Common Drain-Source
Parameter Interactions
100 I DSS @ VDS = 5.0V, VGS = 0 PULSED
50 r DS @ V DS = 100mV, VGS = 0
V GS(off) @ V DS = 5.0V, I D = 3.0 nA
r DS
10
5
I DSS
1,000
500
100
50
_ 0.1
_ 0.5 _ 1
_5
_
10
10
VGS (OFF) - GATE CUTOFF VOLTAGE (V)
Figure 2. Parameter Interactions
Common Drain-Source
100
f = 0.1 - 1.0 MHz
C iss (V DS = 5.0V)
10
C rss (VDS = 0 )
0 -4 -8 -12 -16 -20
V GS - GATE-SOURCE VOLTAGE (V)
Figure 3. Common Drain-Source
Common Drain-Source
50
TA = 25°C
40 TYP V GS(off) = - 0.7 V
30
V GS = 0 V
20 - 0.1 V
- 0.2 V
- 0.3 V - 0.4 V - 0.5 V
10
0
01234
VDS - DRAIN-SOURCE VOLTAGE (V)
Figure 4. Common Drain-Source
5
Normalized Drain Resistance
vs Bias Voltage
100
50
VGS(off) @ 5.0V, 10 µA
r DS
20
r DS =
1
-___V_G_S___
10 V GS(off)
5
2
1
0 0.2 0.4 0.6 0.8 1
VGS /VGS(off)- NORMALIZED GATE-SOURCE VOLTAGE (V)
Figure 5. Normalized Drain Resistance vs
Bias Voltage
©2002 Fairchild Semiconductor Corporation
Noise Voltage vs Frequency
100
50
VDG = 10V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f 1.0 kHz
10
5
I D = 10 mA
I D = 1.0 mA
1
0.01 0.03 0.1
0.5 1 2
10
f - FREQUENCY (kHz)
100
Figure 6. Noise Voltage vs Frequency
Rev. B1, November 2002


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Typical Characteristics (Continued)
Switching Turn-On Time vs
Gate-Source Cutoff Voltage
10
TA = 25°C
8 VDD = 1.5V
V GS(off)= - 12V
6
I D = 30 mA
4
I D = 10 mA
2
0
0 -2 -4 -6 -8 -10
VGGSS((ooffff)) - GATE-SOURCE CUTOFF VOLTAGE (V)
Figure 7. Switching Turn-On Time vs
Gate-Source Cutoff Voltage
Switching Turn-On Time
vs Drain Current
50
40 V GS(off) = - 8.5V
30
20
TA = 25°C
VGS(off) = - 5.5V
V GS(off) = - 3.5V
10 VDD = 1.5V
V GS(off)= - 12V
0
0 5 10 15 20
I D - DRAIN CURRENT (mA)
25
Figure 8. Switching Turn-On Time vs Drain Current
On Resistance vs Drain Current
100
50 VGS = 0
V GS(off)= - 3.0V
125°C
10
125°C
5
25°C
25°C
- 55°C
V GS(off)= - 5.0V
1
1 10 100
I D - DRAIN CURRENT (mA)
Figure 9. On Resistance vs Drain Current
Output Conductance
vs Drain Current
100
V DG = 5.0V
10V
VGS(off) 5.0V
15V
20V
- 4.0V
10V
10 15V
5.0V
10V
20V 15V
- 2.0V
20V
T A = 25°C
1
0.1
- 1.0V
f = 1.0 kHz
1 10
I D - DRAIN CURRENT (mA)
Figure 10. Output Conductance vs Drain Current
Transconductance
vs Drain Current
100
TA = 25°C
V DG = 10V
f = 1.0 kHz
TA = - 55°C
T A = 25°C
TA = 125°C
10
1
0.1
V GS(off) = - 1.0V
VGS(off) = - 3.0V
V GS(off) = - 5.0V
1
I D - DRAIN CURRENT (mA)
10
Figure 11. Transconductance vs Drain Current
700
600
500
400 S uperS O T-3
T O -92
300
200
100
0
0 25 50 75 100
o
TEMPERATURE ( C)
125
150
Figure 12. Power Dissipation vs Ambient Temperature
©2002 Fairchild Semiconductor Corporation
Rev. B1, November 2002


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Package Dimensions
TO-92
4.58
+0.25
–0.15
0.46 ±0.10
1.27TYP
[1.27 ±0.20]
1.27TYP
[1.27 ±0.20]
3.60 ±0.20
(R2.29)
0.38
+0.10
–0.05
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, November 2002


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Package Dimensions (Continued)
SuperSOT-3
©2002 Fairchild Semiconductor Corporation
Dimensions in Millimeters
Rev. B1, November 2002


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CORPORATION.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
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2. A critical component is any component of a life support
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Preliminary
No Identification Needed
Product Status
Formative or In
Design
First Production
Full Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
©2002 Fairchild Semiconductor Corporation
Rev. I1




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