NXP Semiconductors Electronic Components Datasheet



J108

N-channel silicon junction FETs


J108 Datasheet PDF
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DISCRETE SEMICONDUCTORS
DATA SHEET
J108; J109; J110
N-channel silicon junction FETs
Product specification
Supersedes data of April 1995
File under Discrete Semiconductors, SC07
1996 Jul 30


J108 Datasheet PDF
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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
FEATURES
High speed switching
Interchangeability of drain and source connections
Low RDSon at zero gate voltage (<8 for J108).
APPLICATIONS
Analog switches
Choppers and commutators.
DESCRIPTION
N-channel symmetrical silicon junction field-effect
transistors in a TO-92 package.
CAUTION
The device is supplied in an antistatic package. The
gate-source input must be protected against static
discharge during transport or handling.
PINNING - TO-92
PIN SYMBOL
1g
2s
3d
DESCRIPTION
gate
source
drain
1
handbook, halfpage2
3
g
MAM197
d
s
Fig.1 Simplified outline and symbol.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
VDS
VGSoff
drain-source voltage
gate-source cut-off voltage
J108
J109
J110
IDSS drain current
J108
J109
J110
Ptot total power dissipation
CONDITIONS
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 5 V
up to Tamb = 50 °C
MIN. MAX. UNIT
− ±25 V
3 10
2 6
0.5 4
V
V
V
80
mA
40
mA
10
mA
400 mW
1996 Jul 30
2


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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
VDS
VGSO
VGDO
IG
Ptot
Tstg
Tj
drain-source voltage
gate-source voltage
gate-drain voltage
forward gate current (DC)
total power dissipation
storage temperature
operating junction temperature
open drain
open source
up to Tamb = 50 °C
MIN.
65
MAX.
±25
25
25
50
400
150
150
UNIT
V
V
V
mA
mW
°C
°C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-a
thermal resistance from junction to ambient
VALUE
250
UNIT
K/W
STATIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
V(BR)GSS
VGSoff
IDSS
IGSS
IDSX
RDSon
gate-source breakdown voltage
gate-source cut-off voltage
J108
J109
J110
drain current
J108
J109
J110
gate leakage current
drain-source cut-off current
drain-source on-state resistance
J108
J109
J110
CONDITIONS
IG = 1 µA; VDS = 0
ID = 1 µA; VDS = 5 V
VGS = 0; VDS = 15 V
VGS = 15 V; VDS = 0
VGS = 10 V; VDS = 5 V
VGS = 0; VDS = 100 mV
MIN.
3
2
0.5
80
40
10
TYP.
MAX.
25
10
6
4
UNIT
V
V
V
V
V
mA
mA
mA
3 nA
3 nA
8
12
18
1996 Jul 30
3


J108 Datasheet PDF
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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
DYNAMIC CHARACTERISTICS
Tj = 25 °C; unless otherwise specified.
SYMBOL
PARAMETER
Cis input capacitance
Crs reverse transfer capacitance
Switching times; see Fig.2
CONDITIONS
VDS = 0; VGS = 10 V; f = 1 MHz
VDS = 0; VGS = 0; f = 1 MHz;
Tamb = 25 °C
VDS = 0; VGS = 10 V; f = 1 MHz
td delay time
ton turn-on time
ts storage time
toff turn-off time
note 1
Note
1. Test conditions for switching times are as follows:
VDD = 1.5 V; VGS = 0 to VGSoff (all types)
VGSoff = 12 V; RL = 100 (J108)
VGSoff = 7 V; RL = 100 (J109)
VGSoff = 5 V; RL = 100 (J110).
TYP.
15
50
MAX.
30
85
UNIT
pF
pF
8 15 pF
2 ns
4 ns
4 ns
6 ns
handbook, halfpage
VDD
50
0.1 µF
10 nF
10 µF
RL
DUT
SAMPLING
SCOPE
50
50
MGE773
Fig.2 Switching circuit.
1996 Jul 30
4


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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
handbook, full pagewidth
VGS = 0 V
Vi
VGS off
10%
90%
90%
Vo
10%
toff
ts tf
ton
td
tr
MGE774
Fig.3 Input and output waveforms.
1996 Jul 30
5


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Philips Semiconductors
N-channel silicon junction FETs
PACKAGE OUTLINE
Product specification
J108; J109; J110
andbook, full pagewidth
4.2 max
1.7
1.4
4.8
max
2.54
1
2
3
0.66
0.56
0.40
min
5.2 max
12.7 min
0.48
0.40
2.0 max (1)
MBC014 - 1
Dimensions in mm.
(1) Terminal dimensions in this zone are uncontrolled.
Fig.4 TO-92 (SOT54).
1996 Jul 30
6


J108 Datasheet PDF
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Philips Semiconductors
N-channel silicon junction FETs
Product specification
J108; J109; J110
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1996 Jul 30
7




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