Fairchild Semiconductor Electronic Components Datasheet



1N4148

Small Signal Diode


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June 2015
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
Small Signal Diode
Cathode Band
DO-35
Cathode is denoted with a black band
SOD80
LL-34
THE PLACEMENT OF THE EXPANSION GAP
HAS NO RELATIONSHIP TO THE LOCATION
OF THE CATHODE TERMINAL
SOD-80 COLOR BAND MARKING
DEVICE 1ST BAND
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4448
BLACK
BLACK
BLACK
BLACK
BLACK
-1st band denotes cathode terminal
and has wider width
Ordering Information
Part Number
1N914
1N914_T50A
1N914TR
1N914ATR
1N914B
1N914BTR
1N916
1N916A
1N916B
1N4148
1N4148TA
1N4148_T26A
1N4148_T50A
1N4148TR
1N4148_T50R
1N4448
1N4448TR
FDLL914
FDLL914A
FDLL914B
FDLL4148
FDLL4148_D87Z
FDLL4448
FDLL4448_D87Z
Marking
914
914
914
914A
914B
914B
916
916A
916B
4148
4148
4148
4148
4148
4148
4448
4448
Black
Black
Black
Black
Black
Black
Black
© 2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8
Package
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
DO-204AH (DO-35)
SOD-80
SOD-80
SOD-80
SOD-80
SOD-80
SOD-80
SOD-80
Packing Method
Bulk
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
Bulk
Bulk
Bulk
Bulk
Ammo
Ammo
Ammo
Tape and Reel
Tape and Reel
Bulk
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
Tape and Reel
www.fairchildsemi.com


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Absolute Maximum Ratings(1)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Value
Unit
VRRM
IO
IF
If
Maximum Repetitive Reverse Voltage
Average Rectified Forward Current
DC Forward Current
Recurrent Peak Forward Current
IFSM Non-repetitive Peak Forward Surge Current
TSTG
TJ
Storage Temperature Range
Operating Junction Temperature Range
Pulse Width = 1.0 s
Pulse Width = 1.0 μs
100
200
300
400
1.0
4.0
-65 to +200
-55 to +175
V
mA
mA
mA
A
A
°C
°C
Note:
1. These ratings are limiting values above which the serviceability of the diode may be impaired.
Thermal Characteristics
Symbol
Parameter
PD
RθJA
Power Dissipation
Thermal Resistance, Junction-to-Ambient
Max.
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448
500
300
Unit
mW
°C/W
Electrical Characteristics(2)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Conditions
VR Breakdown Voltage
IR= 100 μA
IR= 5.0 μA
914B / 4448
IF= 5.0 mA
916B
IF= 5.0 mA
914 / 916 / 4148
VF
Forward Voltage
914A / 916A
IF= 10 mA
IF= 20 mA
916B
IF= 20 mA
914B / 4448
IF= 100 mA
VR= 20 V
IR Reverse Leakage
VR= 20 V, TA= 150°C
VR= 75 V
CT
Total Capacitance 916/916A/916B/4448 VR = 0, f = 1.0 MHz
914/914A/914B/4148 VR = 0, f = 1.0 MHz
trr Reverse Recovery Time
IF = 10 mA, VR = 6.0 V (600 mA)
Irr = 1.0 mA, RL = 100 Ω
Note:
2. Non-recurrent square wave PW= 8.3 ms.
Min.
100
75
0.62
0.63
Max.
0.72
0.73
1.0
1.0
1.0
1.0
0.025
50
5.0
2.0
4.0
4.0
Unit
V
V
V
V
V
V
V
V
μA
μA
μA
pF
pF
ns
© 2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8
2
www.fairchildsemi.com


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Typical Performance Characteristics
160
Ta=25 oC
150
140
130
120
110
1
23
5
10
20 30 50
Reverse Current, IR [uA]
100
Figure 1. Reverse Voltage vs. Reverse Current
BV - 1.0 to 100 μA
550
Ta= 25 oC
500
450
400
350
300
250
1
23
5
10 20 30 50
Forward Current, IF [uA]
100
Figure 3. Forward Voltage vs. Forward Current
VF - 1 to 100 μA
120
Ta= 25 oC
100
80
60
40
20
0
10
20 30
50 70
Reverse Voltage, VR [V]
GENERAL RULE: The Reverse Current of a diode will approximately
double for every ten (10) Degree C increase in Temperature
100
Figure 2. Reverse Current vs. Reverse Voltage
IR - 10 to 100 V
750
Ta= 25 oC
700
650
600
550
500
450
0.1
0.2 0.3 0.5
1
23
Forward Current, IF [mA]
5
10
Figure 4. Forward Voltage vs. Forward Current
VF - 0.1 to 10 mA
1.6
Ta= 25 oC
1.4
1.2
1.0
0.8
0.6
10
20 30 50
100 200 300 500 800
Forward Current, IF [mA]
Figure 5. Forward Voltage vs. Forward Current
VF - 10 to 800 mA
900
Typical
800
700
600
Ta= -40 oC
Ta= 25 oC
500 Ta= +65 oC
400
300
0.01 0.03 0.1 0.3 1 3 10
Forward Current, IF [mA]
Figure 6. Forward Voltage vs. Ambient Temperature
VF - 0.01 - 20 mA (- 40 to +65°C)
© 2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8
3
www.fairchildsemi.com


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Typical Performance Characteristics (Continued)
0.90
TA = 25 oC
0.85
0.80
0.75
0 2 4 6 8 10 12 14
REVERSE VOLTAGE (V)
Figure 7. Total Capacitance
4.0
Ta = 25 oC
3.5
3.0
2.5
2.0
1.5
1.0
10
20 30 40 50
Reverse Recovery Current, Irr [mA]
IF = 10mA , IRR = 1.0 mA , Rloop = 100 Ohms
60
Figure 8. Reverse Recovery Time vs.
Reverse Recovery Current
500
400
300
200
100
I
F(AV)
-
AVERAGE
RECTIFIED
CURRENT
-
mA
0
0 50 100 150
Ambient Temperature ( oC)
Figure 9. Average Rectified Current (IF(AV))
vs. Ambient Temperature (TA)
500
400
DO-35 and LL-34 / SOD-80
300
200
100
0
0 50 100 150 200
Temperature [ oC]
Figure 10. Power Derating Curve
© 2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8
4
www.fairchildsemi.com


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Physical Dimensions
Figure 11. AXIAL LEADED, GLASS, JEDEC DO204, VARIATION AH, DO-204AH (DO-35)
© 2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8
5
www.fairchildsemi.com


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Physical Dimensions (Continued)


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Figure 12. 2-TERMINAL, SOD-80, JEDEC DO-213AC, MINI-MELF
© 2002 Fairchild Semiconductor Corporation
1N/FDLL 914/A/B / 916/A/B / 4148 / 4448 Rev. 2.8
6
www.fairchildsemi.com


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Datasheet contains the design specifications for product development. Specifications may change
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Rev. I74
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