1N4148 Datasheet PDF
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1N4148
Silicon Epitaxial Planar Switching Diode
Applications
• High-speed switching
This diode is also available in MiniMELF case
with the type designation LL4148
Max. 0.5
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
Black
"ST" Brand
XXX
ST
Max. 3.9
Min. 27.5
Glass Case DO-35
Dimensions in mm
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX Max. 2.9
Min. 27.5
Glass Case DO-34
Dimensions in mm
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Peak Reverse Voltage
VRM 100
Reverse Voltage
VR 75
Average Rectified Forward Current
IF(AV)
200
Non-repetitive Peak Forward Surge Current
Power Dissipation
at t = 1 s
at t = 1 ms
at t = 1 μs
IFSM
Ptot
0.5
1
4
500 1)
Junction Temperature
Tj 200
Storage Temperature Range
Tstg - 65 to + 200
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Unit
V
V
mA
A
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/06/2009


1N4148 Datasheet PDF
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1N4148
Characteristics at Ta = 25 OC
Parameter
Symbol
Min.
Forward Voltage
at IF = 10 mA
VF -
Leakage Current
at VR = 20 V
at VR = 75 V
at VR = 20 V, Tj = 150 OC
IR -
IR -
IR -
Reverse Breakdown Voltage
at IR = 100 µA
at IR = 5 µA
Capacitance
at VR = 0, f = 1 MHz
Voltage Rise when Switching ON
tested with 50 mA Forward Pulses
tp = 0.1 s, Rise Time < 30 ns, fp = 5 to 100 KHz
V(BR)R
V(BR)R
Ctot
Vfr
100
75
-
-
Reverse Recovery Time
at IF = 10 mA to IR = 1 mA, VR = 6 V, RL = 100
Thermal Resistance Junction to Ambient Air
trr
RthA
-
-
Rectification Efficiency
at f = 100 MHz, VRF = 2 V
ηV 0.45
1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature.
Max.
1
25
5
50
-
-
4
2.5
4
0.35 1)
-
Unit
V
nA
µA
µA
V
V
pF
V
ns
K/mW
-
~~~
Rectification Efficiency Measurement Circuit
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/06/2009


1N4148 Datasheet PDF
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1N4148
Forward characteristics
mA
10 3
1N 4148
10 2
iF
10
o
Tj=100 C
Tj=25o C
1
10 -1
10 -2
0
1 2V
VF
Admissible power dissipation
versus ambient temperature
Valid provided that leads at a distance of 8 mm from case
are kept at ambient temperature
mW
1000
1N 4148
900
800
Ptot 700
600
500
400
300
200
100
0
0
100
Tamb
200 oC
Dynamic forward resistance
versus forward current
10 4
5
1N 4148
Tj=25oC
f=1KHz
2
10 3
rf 5
2
10 2
5
2
10
5
2
1
10 -2
10 -1
1
10 10 2 mA
IF
Relative capacitance
versus reverse voltage
1.1
Ctot(VR)
Ctot(0V)
1.0
1N 4148
Tj=25oC
f=1MHz
0.9
0.8
0.7
0
0
2
46
8 10 V
VR
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/06/2009


1N4148 Datasheet PDF
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1N4148
Leakage current
versus junction temperature
nA 1N 4148
10 4
5
2
10 3
IR 5
2
10 2
5
2
10
5
2
1
0
VR=20V
100 200 oC
Tj
Admissible repetitive peak forward current
versus pulse duration
Valid provided that leads at a distance of 8 mm from case
A are kept at ambient temperature
100
5
4
3
2
IFRM
10
5
4
3
2
1
5
4
3
2
v=0
0.1
0.2
0.5
0.1
10 -5 2
5 10 -4 2
5 10 -3 2
5 10 -2 2
I v=tp/T
1N 4148
T=1/fp
IFRM
tp
T
t
5 10 -1 2 5 1 2 5 10 s
tp
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 15/06/2009





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