1N4148 Datasheet PDF
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RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
1N4148
1N4148 SIGNAL DIODE
Absolute Maximum Ratings (Ta=25°C)
Items
Symbol Ratings Unit
Reverse Voltage
VR
75 V
Reverse Recovery trr
4 ns
Time
Power Dissipation
P
500 mW
3.33mW/°C (25°C)
Forward Current
IF
300 mA
Junction Temp.
Tj -65 to 175 °C
Storage Temp.
Tstg -65 to 175 °C
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
Dimensions (DO-35)
DO-35
26 MIN
0.457
0.559
DIA.
4.2
max.
26 MIN
2.0
max.
DIA.
Dimensions in millimeters
Electrical Characteristics (Ta=25°C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 10mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100
Symbol
BV
IFsurge
VF
IR
Cj
trr
Ratings
75
100
1.0
1.0
0.025
5.0
50
4
4
Unit
V
A
V
uA
pF
ns
RECTRON USA
1315 John Reed Court, Industry, CA 91745
Tel: (626) 333-3802 Fax: (626) 330-6296 www.rectron.com





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