BC807-16W Datasheet PDF
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PNP Silicon AF Transistor
For general AF applications
High collector current
High current gain
Low collector-emitter saturation voltage
Complementary type:
BC817.../W, BC818.../W (NPN)
Pb-free (RoHS compliant) package1)
Qualified according AEC Q101
BC807.../BC808...
Type
BC807-16
BC807-16W
BC807-25
BC807-25W
BC807-40
BC807-40W
BC808-25
BC808-25W
BC808-40
BC808-40W
Marking
Pin Configuration
5As 1 = B 2 = E 3 = C -
-
5As 1 = B 2 = E 3 = C -
-
5Bs 1 = B 2 = E 3 = C -
-
5Bs 1 = B 2 = E 3 = C -
-
5Cs 1 = B 2 = E 3 = C -
-
5Cs 1 = B 2 = E 3 = C -
-
5Fs 1 = B 2 = E 3 = C -
-
5Fs 1 = B 2 = E 3 = C -
-
5Gs 1 = B 2 = E 3 = C -
-
5Gs 1 = B 2 = E 3 = C -
-
1Pb-containing package may be available upon special request
-
-
-
-
-
-
-
-
-
-
Package
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
SOT23
SOT323
1 2007-06-08


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BC807.../BC808...
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
BC807...
BC808...
VCEO
Collector-base voltage
BC807...
BC808...
VCBO
Emitter-base voltage
Collector current
Peak collector current
Base current
Peak base current
Total power dissipation-
TS 79 °C BC807, BC808
TS 130 °C BC807W, BC808W
Junction temperature
Storage temperature
Thermal Resistance
Parameter
Junction - soldering point1)
BC807, BC808
BC807W, BC808W
VEBO
IC
ICM
IB
IBM
Ptot
Tj
Tstg
Symbol
RthJS
1For calculation of RthJA please refer to Application Note Thermal Resistance
Value
45
25
50
30
5
500
1000
100
200
330
250
150
-65 ... 150
Value
215
80
Unit
V
mA
mW
°C
Unit
K/W
2 2007-06-08


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BC807.../BC808...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
IC = 10 mA, IB = 0 , BC807...
IC = 10 mA, IB = 0 , BC808...
V(BR)CEO
45
25
-
-
-
-
Collector-base breakdown voltage
IC = 10 µA, IE = 0 , BC807...
IC = 10 µA, IE = 0 , BC808...
V(BR)CBO
50
30
-
-
-
-
Emitter-base breakdown voltage
IE = 10 µA, IC = 0
V(BR)EBO 5 - -
Collector-base cutoff current
VCB = 25 V, IE = 0
VCB = 25 V, IE = 0 , TA = 150 °C
I CBO
- - 0.1
- - 50
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain1)
IC = 100 mA, VCE = 1 V, hFE-grp. 16
IC = 100 mA, VCE = 1 V, hFE-grp. 25
IC = 100 mA, VCE = 1 V, hFE grp. 40
IC = 500 mA, VCE = 1 V
I EBO
hFE
- - 100
100 160 250
160 250 400
250 350 630
40 -
-
Collector-emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
Base emitter saturation voltage1)
IC = 500 mA, IB = 50 mA
VCEsat - - 0.7
VBEsat - - 1.2
1Pulse test: t < 300µs; D < 2%
Unit
V
µA
nA
-
V
3 2007-06-08


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BC807.../BC808...
Electrical Characteristics at TA = 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
AC Characteristics
Transition frequency
IC = 50 mA, VCE = 5 V, f = 100 MHz
fT - 200 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Emitter-base capacitance
VEB = 0.5 V, f = 1 MHz
Ccb - 8 - pF
Ceb - 60 -
4 2007-06-08


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DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 16
10 3
BC807.../BC808...
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 25
10 3
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
10 2
105 °C
85 °C
65 °C
25 °C
-40 °C
10
1
10
-5
10 -4
10 -3
10 -2
DC current gain hFE = ƒ(IC)
VCE = 1 V
hFE-grp. 40
10 3
10 -1 A 10 0
IC
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 A 10 0
IC
Collector-emitter saturation voltage
IC = ƒ(VCEsat), hFE = 10
10 3
Ι C mA
10 2
5
150 ˚C
25 ˚C
-50 ˚C
EHP00215
10 2 105 °C
85 °C
65 °C
25 °C
-40 °C
10 1
5
10 0
5
10
1
10
-5
10 -4
10 -3
10 -2
10 -1 A 10 0
IC
10 -1
0
0.2 0.4 0.6 V 0.8
V CEsat
5 2007-06-08


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BC807.../BC808...
Base-emitter saturation voltage
IC = ƒ(VBEsat), hFE = 10
Collector cutoff current ICBO = ƒ(TA)
VCBO = 25 V
10 3
Ι C mA
10 2
5
10 1
5
150 ˚C
25 ˚C
-50 ˚C
EHP00214
10 5
nA
Ι CBO
10 4
10 3
10 2
EHP00213
max
typ
10 0
5 101
10 -1
0
1.0 2.0 3.0 V 4.0
V BEsat
Transition frequency fT = ƒ(IC)
VCE = parameter in V, f = 2 GHz
10 0
0
50 100 ˚C 150
TA
Collector-base capacitance Ccb = ƒ(VCB)
Emitter-base capacitance Ceb = ƒ(VEB)
10 3
MHz
fT 5
EHP00210
65
pF
55
50
45
40
35
10 2
30
25
5
20 CEB
15
10 1
10 0 10 1 10 2 mA 10 3
ΙC
10
CCB
5
0
0 2 4 6 8 10 12 14 16 V 20
VCB/VEB
6 2007-06-08


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BC807.../BC808...
Total power dissipation Ptot = ƒ(TS)
BC807, BC808
Total power dissipation Ptot = ƒ(TS)
BC807W, BC808W
360
mW
300
270
240
210
180
150
120
90
60
30
0
0 15 30 45 60 75 90 105 120 °C 150
TS
Permissible Pulse Load RthJS = ƒ(tp)
BC807, BC808
10 3
300
mW
250
225
200
175
150
125
100
75
50
25
0
0 15 30 45 60 75 90 105 120 °C 150
TS
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC807, BC808
10 4
-
10 2
10 1
D = 0,5
0,2
0,1
0,05
10 0 0,02
0,01
0,005
0
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10 3
D=0
0.005
0.01
10 2 0.02
0.05
0.1
0.2
0.5
10 1
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
7 2007-06-08


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BC807.../BC808...
Permissible Puls Load RthJS = ƒ (tp)
BC807W, BC808W
10 3
K/W
10 2
10 1
0.5
0.2
0.1
0.05
10 0
0.02
0.01
0.005
D=0
Permissible Pulse Load
Ptotmax/PtotDC = ƒ(tp)
BC807W, BC808W
10 3
-
D=0
10 2 0.005
0.01
0.02
0.05
0.1
0.2
0.5
10 1
10
-1
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
10
0
10
-6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
8 2007-06-08


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Package SOT23
BC807.../BC808...
Package Outline
Foot Print
2.9 ±0.1
3
B
1±0.1
0.1 MAX.
1
0.4
+0.1 1)
-0.05
1.9
2
C
0.95
0.25 M B C
0.08...0.15 A
0...8˚
0.2 M A
1) Lead width can be 0.6 max. in dambar area
0.8
0.8 1.2
Marking Layout (Example)
EH s
Pin 1
Manufacturer
2005, June
Date code (YM)
BCW66
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.9
0.2
Pin 1 3.15
9
1.15
2007-06-08


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Package Outline
Foot Print
Package SOT323
BC807.../BC808...
2 ±0.2
0.3
+0.1
-0.05
3
3x
0.1 M
0.9 ±0.1
0.1 MAX.
0.1
A
12
0.65 0.65
0.15
+0.1
-0.05
0.2 M A
0.6
0.65
0.65
Marking Layout (Example)
Pin 1
Manufacturer
2005, June
Date code (YM)
BCR108W
Type code
Standard Packing
Reel ø180 mm = 3.000 Pieces/Reel
Reel ø330 mm = 10.000 Pieces/Reel
4
0.2
Pin 1 2.15
1.1
10
2007-06-08


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BC807.../BC808...
Edition 2006-02-01
Published by
Infineon Technologies AG
81726 München, Germany
© Infineon Technologies AG 2007.
All Rights Reserved.
Attention please!
The information given in this dokument shall in no event be regarded as a guarantee
of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any
examples or hints given herein, any typical values stated herein and/or any information
regarding the application of the device, Infineon Technologies hereby disclaims any
and all warranties and liabilities of any kind, including without limitation warranties of
non-infringement of intellectual property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices
please contact your nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest
Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or
systems with the express written approval of Infineon Technologies, if a failure of
such components can reasonably be expected to cause the failure of that
life-support device or system, or to affect the safety or effectiveness of that
device or system.
Life support devices or systems are intended to be implanted in the human body,
or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons
may be endangered.
11 2007-06-08



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