FPF1048 Datasheet PDF
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April 2015
FPF1048
IntelliMAX3 A-Capable, Slew-Rate-Controlled Load Switch
with True Reverse Current Blocking
Features
Input Voltage Operating Range: 1.5 V to 5.5 V
Typical RDS(ON):
- 21 mat VIN=5.5 V
- 23 mat VIN=4.5 V
- 41 mat VIN=1.8 V
- 90 mat VIN=1.5 V
Slew Rate/Inrush Control with tR: 2.7 ms (Typ.)
3 A Maximum Continuous Current Capability
Low Off Switch Current: <1 µA
True Reverse Current Blocking (TRCB)
Logic CMOS IO Meets JESD76 Standard for GPIO
Interface and Related Power Supply Requirements
ESD Protected:
- Human Body Model: >8 kV
- Charged Device Model: >1.5 kV
- IEC 61000-4-2 Air Discharge: >15 kV
- IEC 61000-4-2 Contact Discharge: >8 kV
Applications
Smart Phones, Tablet PCs
Storage, DSLR, and Portable Devices
Description
The FPF1048 advanced load management switch
targets applications requiring a highly integrated
solution. It disconnects loads powered from the DC
power rail (<6 V) with stringent off-state current targets
and high load capacitances (up to 100 µF). The
FPF1048 consists of slew-rate controlled low-
impedance MOSFET switch (23 typical) and
integrated analog features. The slew-rate controlled
turn-on characteristic prevents inrush current and the
resulting excessive voltage droop on power rails.
The FPF1048 has a True Reverse Current Blocking
(TRCB) function that obstructs unwanted reverse
current from VOUT to VIN during both ON and OFF states.
The exceptionally low off-state current drain (<1µA
maximum) facilitates compliance with standby power
requirements. The input voltage range operates from
1.5 V to 5.5 VDC to support a wide range of applications
in consumer, optical, medical, storage, portable, and
industrial-device power management. Switch control is
managed by a logic input (active HIGH) capable of
interfacing directly with low-voltage control signal /
General-Purpose Input / Output (GPIO) without an
external pull-down resistor.
The device is packaged in advanced, fully “green”
compliant, 1.0 mm x 1.5 mm, Wafer-Level Chip-Scale
Package (WLCSP) with backside lamination.
Ordering Information
Part Number
Top
Mark
FPF1048BUCX RA
Switch RON
(Typical)
at 4.5VIN
23 m
Input Output ON Pin
Buffer Discharge Activity
tR
CMOS
NA
Active
HIGH
2.7 ms
Package
6-Ball, WLCSP with
Backside Laminate, 2x3 Array,
0.5 mm Pitch, 300 µm Balls
© 2011 Fairchild Semiconductor Corporation
FPF1048 • Rev. 1.8
www.fairchildsemi.com


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Application Diagram
1.5~5.5V
VIN VOUT
FPF1048
CIN OFF ON ON
GND
Figure 1. General Application
+
COUT
VIN=5V
CIN
1µF~22µF
RIN
RPU
10MΩ
RPD
NC
VIN VOUT
+
FPF1048
ON
ROUT
COUT
0.1µF~100µF
(optional)
GND
Figure 2. Specific Application with 10 MΩ Pull-Up Resistor at ON Pin
Notes:
1. Turn-on operation with a 10 MΩ pull-up resistor at ON pin is acceptable.
2. VIN should be high enough to generate VON greater than VIH at the ON pin.
3. NC means no connection.
4. RIN and ROUT can be added to reduce transient peak voltage. 1 Ω~10 Ω is recommended.
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
2
www.fairchildsemi.com


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Functional Block Diagram
VIN
FPF1048
TRCB
ON
CONTROL
LOGIC
ESD Protection
RON
Turn-On Slew Rate
Controlled Driver
GND
Figure 3.
Functional Block Diagram
Pin Configurations
Pin 1
VOUT
VOUT A1
A2 VIN
VOUT B1
B2 VIN
VIN A2
A1 VOUT
VIN B2
B1 VOUT
GND C1
C2 ON
ON C2
C1 GND
Figure 4. Pin Assignments (Top View)
Figure 5. Pin Assignments (Bottom View)
Pin Description
Pin #
A1, B1
A2, B2
C1
C2
Name
VOUT
VIN
GND
ON
Description
Switch Output
Supply Input: Input to the Power Switch
Ground
ON/OFF Control, Active High, GPIO Compatible
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
3
www.fairchildsemi.com


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Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameters
VIN
ISW
PD
TSTG
TA
VIN, VOUT, VON to GND
Maximum Continuous Switch Current
Power Dissipation at TA=25°C
Storage Junction Temperature
Operating Temperature Range
JA Thermal Resistance, Junction-to-Ambient
ESD
Human Body Model, JESD22-A114
Electrostatic Charged Device Model, JESD22-C101
Discharge
Capability IEC61000-4-2 Air Discharge (VIN, VON, VOUT to GND)
System Level Contact Discharge (VIN, VON, VOUT to GND)
Notes:
5. Measured using 2S2P JEDEC std. PCB.
6. Measured using 2S2P JEDEC PCB cold plate method.
Min.
-0.3
-65
-40
8.0
1.5
15.0
8.0
Max.
6.0
3.0
1.2
+150
+85
85(5)
110(6)
Unit
V
A
W
°C
°C
°C/W
kV
Recommended Operating Conditions
The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended
operating conditions are specified to ensure optimal performance to the datasheet specifications. Fairchild does not
recommend exceeding them or designing to Absolute Maximum Ratings.
Symbol
Parameters
VIN Input Voltage
TA Ambient Operating Temperature
ISW Continuous Switch Current
Min.
1.5
-40
Typ.
2.5
Max.
5.5
+85
3
Unit
V
°C
A
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
4
www.fairchildsemi.com


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Electrical Characteristics
Unless otherwise noted, VIN=1.5 to 5.5 V, TA=-40 to +85°C; typical values are at VIN=4.5 V and TA=25°C.
Symbol
Parameters
Conditions
Min. Typ. Max. Units
Basic Operation
VIN
IQ(OFF)
ISD
IQ
Input Voltage
Off Supply Current
Shutdown Current
Quiescent Current
VON=GND, VOUT=Open
VON=GND, VOUT=GND, TA= -40 to +85°C
IOUT=0 mA
VIN=5.5 V, IOUT=3 A(7)
VIN=5.5 V, IOUT=2 A(7)
1.5 5.5
1
0.2 4.0
11
22.0
21.5
V
μA
μA
μA
RON On Resistance
VIN=5.5 V, IOUT=1 A, TA=25°C
VIN=4.5 V, IOUT=3 A(7)
VIN=4.5 V, IOUT=2 A(7)
VIN=4.5 V, IOUT=1 A, TA=25°C
21.0 28.0
24.0
23.5
23.0 30.0
VIN=3.3 V, IOUT=500 mA, TA=25°C
26.0
VIN=2.5 V, IOUT=500 mA, TA=25°C
30.0
VIN=1.8 V, IOUT=250 mA, TA=25°C
41.0
VIN=1.5 V, IOUT=250 mA, TA=25°C
90.0 110.0
VIH ON Input Logic High Voltage
VIN=1.5 V to 5.5 V
1.15 V
VIL ON Input Logic Low Voltage
ION ON Input Leakage
RON_PD Pull-Down Resistance at ON Pin
True Reverse Current Blocking
VIN=1.8 V to 5.5 V
VIN=1.5 V to 1.8 V
VON= VIN or GND
VIN= VON = 1.5 V to 5.5 V, TA= -40 - +85°C
6.38
7.65
0.65
0.60
1.0
8.86
V
V
μA
VT_RCB RCB Protection Trip Point
VOUT - VIN
45 mV
VR_RCB
RCB Protection Release Trip
Point
VIN -VOUT
25 mV
RCB Hysteresis
ISD_OUT VOUT Shutdown Current
VON = 0, VOUT = 4.5 V, VIN = Short to GND
70 mV
2 μA
tRCB_ON RCB Response Time, Device ON VOUT - VIN=100 mV, VON = HIGH
4 µs
tRCB_OFF RCB Response Time, Device OFF VOUT - VIN=100 mV, VON = LOW
2.5 µs
Dynamic Characteristics
tDON
tR
tON
tDON
tR
tON
tDOFF
tF
tOFF
Turn-On Delay(8,9)
VOUT Rise Time(8,9)
Turn-On Time(8,9)
Turn-On Delay(8,9)
VOUT Rise Time(8,9)
Turn-On Time(8,9)
Turn-Off Delay(8,10)
VOUT Fall Time(8,10)
Turn-Off Time(8,10)
1.7 ms
VIN=4.5 V, RL=5 Ω, CL=100 µF, TA=25°C 2.7 ms
4.4 ms
VIN=4.5 V, RL=150 Ω, CL=100 µF,
TA=25°C
1.7 ms
1.5 ms
3.2 ms
VIN=4.5 V, RL=150 Ω, CL=100 µF,
TA=25°C
1.8 ms
34 ms
35 ms
Notes:
7. This parameter is guaranteed by design and characterization; not production tested.
8. tDON/tDOFF/tR/tF are defined in Figure 22.
9. tON=tR + tDON.
10. tOFF=tF + tDOFF.
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
5
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Typical Characteristics
8.00
7.00
ON = VIN
6.00
5.00
4.00
3.00
2.00
1.00
0.00
-40
-25
VIN = 5.5V
VIN = 4.5V
VIN = 1.5V
-10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 6. Supply Current vs. Temperature
8.00
7.00
ON = VIN
6.00
25 C
5.00
85 C
4.00
-40 C
3.00
2.00
1.00
0.00
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 7. Supply Current vs. Supply Voltage
9.00 ON = 0V
7.00
5.00
3.00
1.00
-1.00
-3.00
-5.00
-40
-25
VIN = 5.5V
VIN = 1.5V
-10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 8. Shutdown Current vs. Temperature
2.50
ON = 0V
2.00
1.50 85 C
1.00
0.50
-40 C
0.00
25 C
-0.50
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 9. Shutdown Current vs. Supply Voltage
80.0
70.0
ON = VIN
60.0
50.0
40.0
30.0
20.0
10.0
0.0
-40
-25
VIN = 1.5V, IOUT = 250mA
VIN = 1.8V, IOUT = 250mA
VIN = 3.3V, IOUT = 500mA
VIN = 5.5V, IOUT = 1A
-10 5 20 35 50
TJ, JUNCTION TEMPERATURE (°C)
65
80
Figure 10. RON vs. Temperature
80
70
60
50
40
30
20
10
0
1.5
ON = VIN
IOUT = 250mA @ VIN = 1.5-1.8V
IOUT = 500mA @ VIN = 2.5-3.3V
IOUT = 1A @ VIN = 4.0-5.5V
25 C
85 C
-40 C
2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 11. RON vs. Supply Voltage
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
6
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Typical Characteristics
1.20
1.10
1.00
VIN = 5.5V
0.90
0.80
0.70
0.60
VIN = 1.5V
0.50
0.40
-40 -25 -10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 12. VIL vs. Temperature
1.00
0.95
25 C
0.90
-40 C
0.85
0.80
85 C
0.75
0.70
0.65
0.60
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 13. VIL vs. Supply Voltage
1.05
1.00
0.95
VIN = 5.5V
0.90
0.85
0.80
0.75
0.70
VIN = 1.5V
0.65
0.60
-40 -25 -10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 14. VIH vs. Temperature
1.05
1.00
0.95
0.90
-40 C
0.85
0.80 25 C
0.75
85 C
0.70
0.65
0.60
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 15. VIH vs. Supply Voltage
1.00
25 C
0.95
0.90
VIH
0.85
0.80
VIL
0.75
0.70
0.65
0.60
1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
SUPPLY VOLTAGE (V)
Figure 16. On Pin Threshold vs. Supply Voltage
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
7
www.fairchildsemi.com


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Typical Characteristics
35.0
30.0
25.0
tF
20.0
15.0
10.0
5.0
VIN = 4.5V
CL = 100µF
tR RL = 150
0.0
-40 -25 -10
5
20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 17. tR / tF vs. Temperature
2.0
1.8
VIN = 4.5V
CL = 100µF
RL = 150
1.6 tDON
1.4
1.2
tDOFF
1.0
0.8
-40 -25 -10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 18. tDON vs. Temperature
50.0
45.0
40.0
35.0
30.0
25.0
20.0
15.0
10.0
-40 -25 -10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 19. RCB Trip vs. Temperature
22.0
20.0
18.0
16.0
14.0
12.0
10.0
-40 -25 -10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 20. RCB Release vs. Temperature
80.0
70.0
60.0
50.0
40.0
30.0
20.0
10.0
-40 -25 -10 5 20 35 50 65
TJ, JUNCTION TEMPERATURE (°C)
80
Figure 21. RCB Hysteresis vs. Temperature
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
8
4.5V
Figure 22. Timing Diagram
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Typical Characteristics
Figure 23. Turn-On Response
(VIN=4.5 V, CIN=10 µF, COUT=100 µF, RL=5 Ω)
Figure 24. Turn-On Response
(VIN=4.5 V, CIN=10 µF, COUT=100 µF, RL=150 Ω)
Figure 25. Turn-Off Response
(VIN=4.5 V, CIN=10 µF, COUT=100 µF, RL=150 Ω)
Figure 26. RCB Response During Off (VIN=Open, Figure 27. RCB Response During On (VIN=VON=3.6 V,
VON=GND, VOUT=5.5 V, CIN=10 µF, COUT=100 µF)
VOUT=5 V, CIN=10 µF, COUT=100 µF)
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
9
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Operation and Application Description
The FPF1048 is a low-RON P-channel load switch with
controlled turn-on and True Reverse Current Blocking
(TRCB). The core is a 23 mΩ P-channel MOSFET and
controller capable of functioning over a wide input
operating range of 1.5 to 5.5 V. The ON pin, an active-
HIGH, GPIO/CMOS-compatible input; controls the state
of the switch. TRCB functionality blocks unwanted
reverse current during both ON and OFF states when
higher VOUT than VIN is applied.
Input Capacitor
To limit the voltage drop on the input supply caused by
transient inrush current when the switch turns on into a
discharged load capacitor; a capacitor must be placed
between the VIN and GND pins. At least 1 µF ceramic
capacitor, CIN, placed close to the pins is usually
sufficient. Higher-value CIN can be used to reduce the
voltage drop in higher-current applications.
Inrush Current
Inrush current occurs when the device is turned on.
Inrush current is dependent on output capacitance and
slew rate control capability, as expressed by:
I INRUSH
COUT VIN
VINITIAL
tR
ILOAD
where:
COUT: Output capacitance;
tR: Slew rate or rise time at VOUT;
VIN: Input voltage;
VINITIAL: Initial voltage at COUT, usually GND; and
ILOAD: Load current.
(1)
Higher inrush current causes higher input voltage drop,
depending on the distributed input resistance and input
capacitance. High inrush current can cause problems.
FPF1048 has a 2.7 ms of slew rate capability under
4.5 VIN at 1000 µF of COUT and 5 Ω of RL so inrush
current can be minimized and no input voltage drop
appears. Table 1 and Figure 28 show the values and
actual waveforms with CIN=10 µF, COUT=100 µF, and no
load current.
Table 1. Inrush Current by Input Voltage
VIN [V]
1.5
3.3
5.0
tR [ms]
1.62
2.03
2.33
Inrush Current [mA]
Measured
76
140
196
Calculated
with 2.7 ms tR
56
122
185
Figure 28. Inrush Current Waveform, Under 5 VIN,
COUT=100 μF, no Load
Output Capacitor
At least 0.1 µF capacitor, COUT, should be placed
between the VOUT and GND pins. This capacitor
prevents parasitic board inductance from forcing VOUT
below GND when the switch is on.
True Reverse Current Blocking
The true reverse current blocking feature protects the
input source against current flow from output to input
regardless of whether the load switch is on or off.
Board Layout
For best performance, all traces should be as short as
possible. To be most effective, the input and output
capacitors should be placed close to the device to
minimize the effect that parasitic trace inductance on
normal and short-circuit operation. Using wide traces or
large copper planes for all pins (VIN, VOUT, ON, and
GND) minimizes the parasitic electrical effects and the
case-to-ambient thermal impedance.
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
10
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Physical Dimensions
0.03 C
2X
E AF
B
BALL A1
INDEX AREA
D
TOP VIEW
0.03 C
2X
0.05 C
0.06 C
0.625
0.539
E
(Ø0.350)
SOLDER MASK
OPENING
A1
(Ø0.250)
Cu Pad
(1.00)
(0.50)
RECOMMENDED LAND PATTERN
(NSMD PAD TYPE)
0.332±0.018
0.250±0.025
C SEATING PLANE D
SIDE VIEWS
0.50
0.005 C A B
Ø0.315 +/- .025
6X
1.00
0.50
C
B (Y) ±0.018
A
12
F
(X) ±0.018
BOTTOM VIEW
NOTES:
A. NO JEDEC REGISTRATION APPLIES.
B. DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS AND TOLERANCE
PER ASMEY14.5M, 1994.
D. DATUM C IS DEFINED BY THE SPHERICAL
CROWNS OF THE BALLS.
E. PACKAGE NOMINAL HEIGHT IS 582 MICRONS
±43 MICRONS (539-625 MICRONS).
F. FOR DIMENSIONS D, E, X, AND Y SEE
PRODUCT DATASHEET.
G. DRAWING FILNAME: MKT-UC006AFrev2.
Figure 29. 6-Ball WLCSP, 2x3 Array, 0.5 mm Pitch, 300 µm Ball
Product-Specific Dimensions
Product
D
FPF1048BUCX
1460 µm ±30 µm
E
960 µm ±30 µm
X
230 µm
Y
230 µm
© 2011 Fairchild Semiconductor Corporation
FPF1048 Rev. 1.8
11
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