Fairchild Semiconductor Electronic Components Datasheet



FDS6990AS

MOSFET


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M
FDS6990AS
Dual 30V N-Channel PowerTrench® SyncFET™
March 2010
Features
7.5 A, 30 V. RDS(ON) = 22 m@ VGS = 10 V
RDS(ON) = 28 m@ VGS = 4.5 V
Includes SyncFET Schottky diode
Low gate charge (10nC typical)
High performance trench technology for extremely low
RDS(ON)
High power and current handling capability
Applications
DC/DC converter
Motor drives
General Description
The FDS6990AS is designed to replace a dual SO-8 MOSFET
and two Schottky diodes in synchronous DC:DC power sup-
plies. This 30V MOSFET is designed to maximize power con-
version efficiency, providing a low RDS(ON) and low gate charge.
Each MOSFET includes integrated Schottky diodes using Fair-
child’s monolithic SyncFET technology. The performance of the
FDS6990AS as the low-side switch in a synchronous rectifier is
similar to the performance of the FDS6990A in parallel with a
Schottky diode.
D1
D1
D2
D2
SO-8
Pin 1
G1
S1
G2
S2
5
Q1
6
7 Q2
8
4
3
2
1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Symbol
Parameter
VDSS
VGSS
ID
PD
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
TJ, TSTG
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA
RθJC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1c)
(Note 1a)
(Note 1)
Ratings
30
±20
7.5
20
2
1.6
1
0.9
–55 to +150
78
40
Package Marking and Ordering Information
Device Marking
FDS6990AS
Device
FDS6990AS
Reel Size
13"
Tape width
12mm
Units
V
V
A
W
°C
°C/W
°C/W
Quantity
2500 units
©2010 Fairchild Semiconductor Corporation
FDS6990AS Rev. A2
1
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Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVDSS
Drain–Source Breakdown Voltage
BVDSS
TJ
Breakdown Voltage Temperature
Coefficient
IDSS Zero Gate Voltage Drain Current
IGSS
Gate–Body Leakage
On Characteristics (Note 2)
VGS = 0 V, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VGS(th)
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on)
On–State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 1 mA
ID = 1 mA, Referenced to 25°C
VGS = 10 V, ID = 7.5 A
VGS = 10 V, ID = 7.5 A, TJ = 125°C
VGS = 4.5 V, ID = 6.5 A
VGS = 10 V, VDS = 5 V
VDS = 15 V, ID = 10 A
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
RG Gate Resistance
Switching Characteristics (Note 2)
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
VGS = 15 mV, f = 1.0 MHz
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDS = 15 V, ID = 1 A,
VGS = 10 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
td(on)
tr
Turn–On Delay Time
Turn–On Rise Time
VDS = 15 V, ID = 1 A,
VGS = 4.5 V, RGEN = 6
td(off)
Turn–Off Delay Time
tf Turn–Off Fall Time
Qg(TOT) Total Gate Charge at Vgs = 10V
VDD = 15 V, ID = 10 A, VGS = 5 V
Qg Total Gate Charge at Vgs = 5V
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward VGS = 0 V, IS = 2.3 A (Note 2)
Voltage
trr
Diode Reverse Recovery Time
IF = 10A,
Qrr Diode Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
Min
30
1
20
Typ
31
1.7
–3
17
26
21
29
550
162
60
3.1
8
5
24
4
9
8
14
5
10
6
1.5
2.0
0.6
18
11
Max Units
V
mV/°C
500
±100
µA
nA
3V
mV/°C
22 m
35
28
A
S
pF
pF
pF
16 ns
10 ns
38 ns
8 ns
18 ns
16 ns
24 ns
10 ns
14 nC
8 nC
nC
nC
2.9 A
0.7 V
nS
nC
FDS6990AS Rev. A2
2
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Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins.
RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when mounted
on a 0.5 in2 pad of 2 oz
copper
b) 125°C/W when
mounted on a 0.02 in2
pad of 2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
4
FDS6990AS Rev. A2
3
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Typical Characteristics
20
VGS = 10V
4.5V
15
10
3.5V
4.0V
3.0V
5
2.5V
0
0 0.5 1 1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
2
1.6
ID = 7.5A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. On-Resistance Variation with
Temperature.
20
VDS = 5V
16
2
VGS = 3.0V
1.8
1.6
3.5V
1.4
4.0V
1.2
4.5V
5.0V
1
6.0V
10V
0.8
0
4 8 12 16
ID, DRAIN CURRENT (A)
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
20
0.07
ID = 3.75A
0.06
0.05
0.04
0.03
TA = 125 oC
0.02
TA = 25 oC
0.01
2
468
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
100
VGS = 0V
10
12
8
4
0
1.5
TA = 125 oC
-55oC
25oC
2 2.5 3
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 5. Transfer Characteristics.
3.5
1
TA = 125 oC
0.1
25 oC
0.01
-55oC
0.001
0
0.2 0.4 0.6
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.8
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6990AS Rev. A2
4
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Typical Characteristics
10
ID =7.5A
8
VDS = 10V
6
15V
4
20V
2
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
12
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135 oC/W
TA = 25oC
100 µs
1ms
10ms
100s
1s
10s
DC
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
1000
Ciss
100 Coss
20
0.1
f = 1 MHz
VGS = 0 V
1
10
VDS, DRAIN TO SOURCE VOLTAGE (V)
Crss
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
R θJA = 135°C/W
40 TA = 25°C
30
20
10
0
0.001
0.01
0.1 1
t1, TIME (sec)
10
100
Figure 10. Single Pulse Maximum
Power Dissipation.
1000
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
RθJA(t) = r(t) * Rθ JA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ – TA = P * RθJA(t)
Duty Cycle, D = t 1 / t2
0.001
0.0001
0.001
0.01
0.1 1
t1, TIME (sec)
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
100
1000
FDS6990AS Rev. A2
5
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Typical Characteristics (continued)
SyncFET Schottky Body Diode Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in paral-
lel with PowerTrench MOSFET. This diode exhibits similar char-
acteristics to a discrete external Schottky diode in parallel with a
MOSFET. Figure 12 shows the reverse recovery characteristic
of the FDS6990AS.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
0.1
0.01
0.001
0.0001
TA = 125° C
TA = 100° C
12.5nS/Div
Figure 12. FDS6990AS SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 13 shows the reverse
recovery characteristics of the body diode of an equivalent size
MOSFET produced without SyncFET (FDS6990A).
0.00001
0.000001
0
TA = 25° C
5 10 15 20 25
VDS, REVERSE VOLTAGE (V)
30
Figure 14. SyncFET body diode reverse leakage
versus drain-source voltage and temperature.
12.5nS/Div
Figure 13. Non-SyncFET (FDS6990A) body
diode reverse recovery characteristic.
FDS6990AS Rev. A2
6
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Typical Characteristics (continued)
VDS
VGS
RGE
L
DUT
0V
VGS
tp
vary tP to obtain
required peak IAS
IAS
0.01
+
VDD
Figure 15. Unclamped Inductive
Load Test Circuit
Drain Current
Same type as DUT
+
10V
50k
- 10 F
1F
VGS
DUT
+
VDD
Ig(REF)
Figure 17. Gate Charge Test Circuit
VDS
VGS
RGEN
VGS Pulse Width 1µs
Duty Cycle 0.1%
RL
DUT
+
VDD
Figure 19. Switching Time
Test Circuit
tP
IAS
BVDSS
VDS
VDD
tAV
Figure 16. Unclamped Inductive
Waveforms
10V
VGS
QG(TOT)
QGS
QGD
Charge, (nC)
Figure 18. Gate Charge Waveform
VDS
tON
td(ON)
tr
90%
tOFF
td(OFF)
tf
90%
0V
VGS
10%
0V
10%
10%
50%
Pulse Width
90%
50%
Figure 20. Switching Time Waveforms
FDS6990AS Rev. A2
7
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FDS6990AS Rev. A2
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I47
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