Fairchild Semiconductor Electronic Components Datasheet



FDS6994S

MOSFET


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October 2006
FDS6994S
Dual Notebook Power Supply N-Channel PowerTrenchSyncFet
General Description
The FDS6994S is designed to replace two single SO-8
MOSFETs and Schottky diode in synchronous DC:DC
power supplies that provide various peripheral voltages
for notebook computers and other battery powered
electronic devices. FDS6994S contains two unique
30V, N-channel, logic level, PowerTrench MOSFETs
designed to maximize power conversion efficiency.
The high-side switch (Q1) is designed with specific
emphasis on reducing switching losses while the low-
side switch (Q2) is optimized to reduce conduction
losses. Q2 also includes an integrated Schottky diode
using Fairchild’s monolithic SyncFET technology.
Features
Q2: Optimized to minimize conduction losses
Includes SyncFET Schottky body diode
8.2A, 30V
RDS(on) = 15 m@ VGS = 10V
RDS(on) = 17.5 m@ VGS = 4.5V
Q1: Optimized for low switching losses
Low gate charge (85.5 nC typical)
6.9A, 30V
RDS(on) = 21 m@ VGS = 10V
RDS(on) = 26 m@ VGS = 4.5V
D1
D1
D2
D2
SO-8
G1
S1
G2
S2
Absolute Maximum Ratings TA = 25°C unless otherwise noted
Symbol
VDSS
VGSS
ID
PD
TJ, TSTG
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current - Continuous
- Pulsed
(Note 1a)
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient
RθJC Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDS6994S
FDS6994S
13”
2006 Fairchild Semiconductor Corporation
5
6 Q1
7
Q2
8
4
3
2
1
Q2 Q1
30 30
±16 ±16
8.2 6.9
30 20
2
1.6
1
0.9
-55 to +150
Units
V
V
A
W
°C
78 °C/W
40 °C/W
Tape width
12mm
Quantity
2500 units
FDS6994S Rev C2(W)


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Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Off Characteristics
BVDSS
Drain-Source Breakdown
Voltage
BVDSS
TJ
IDSS
Breakdown Voltage
Temperature Coefficient
Zero Gate Voltage Drain
Current
IGSS Gate-Body Leakage
VGS = 0 V, ID = 1 mA
VGS = 0 V, ID = 250 uA
ID = 1 mA, Referenced to 25°C
ID = 250 µA, Referenced to 25°C
VDS = 24 V, VGS = 0 V
VGS = ±16 V, VDS = 0 V
On Characteristics (Note 2)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
VDS = VGS, ID = 1 mA
VDS = VGS, ID = 250 µA
ID = 1 mA, Referenced to 25°C
ID = 250 uA, Referenced to 25°C
VGS = 10 V, ID = 8.2A
VGS = 10 V, ID = 8.2 A, TJ = 125°C
VGS = 4.5 V, ID = 7.6 A
VGS = 10 V, ID = 6.9 A
VGS = 10 V, ID = 6.9 A, TJ = 125°C
VGS = 4.5 V, ID = 6.2 A
VGS = 10 V, VDS = 5 V
gFS Forward Transconductance
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
VDS = 10 V, ID = 8.2 A
VDS = 10 V, ID = 6.9 A
VDS = 15 V, VGS = 0 V,
f = 1.0 MHz
Crss Reverse Transfer Capacitance
RG Gate Resistance
VGS = 15 mV, f = 1.0 MHz
Type Min Typ Max Units
Q2 30
Q1 30
V
Q2
Q1
23
24
mV/°C
Q2
Q1
500
1
µA
All ±100 nA
Q2 1 1.5
Q1 1 1.9
3
3
V
Q2
Q1
–2
–5
mV/°C
Q2 10 15
15 24
11 17.5 m
Q1 16 21
24 33.5
19 26
Q2 30
Q1 20
A
Q2 42
Q1 41
S
Q2 2815
pF
Q1 800
Q2 540
pF
Q1 205
Q2 210
pF
Q1 90
Q2 2.844444.9
Q1 2.6 4.6
FDS6994S Rev C2(W)


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Electrical Characteristics (continued)
TA = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
(Note 2)
VDD = 15 V, ID = 1 A,
VGS = 10V, RGEN = 6
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
Q2:
VDS = 15 V, ID = 7.9 A, VGS = 5 V
Q1:
VDS = 15 V, ID = 6.5 A, VGS = 5 V
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
tRR
Reverse Recovery Time
IF = 8.2 A,
QRR Reverse Recovery Charge diF/dt = 300 A/µs
(Note 3)
tRR
Reverse Recovery Time
IF = 6.9 A,
QRR Reverse Recovery Charge diF/dt = 100 A/µs
(Note 3)
VSD Drain-Source Diode Forward VGS = 0 V, IS = 2.3 A
Voltage
VGS = 0 V, IS = 1.3 A
(Note 2)
(Note 2)
Q2
Q1
Q2
Q2
Q2
Q1
11 20 ns
11 20
8 16 ns
7 14
50 80 ns
27 43
17 31 ns
48
25 35 nC
8 12
6 nC
3
7 nC
3
2.3
1.3
25
19
23
10
0.4 7
0.53 1.2
A
ns
nC
ns
nC
V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.
a) 78°C/W when
mounted on a
0.5in2 pad of 2
oz copper
b) 125°C/W when
mounted on a
0.02 in2 pad of
2 oz copper
c) 135°C/W when
mounted on a
minimum pad.
Scale 1 : 1 on letter size paper
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
3. See “SyncFET Schottky body diode characteristics” below.
FDS6994S Rev C2(W)


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Typical Characteristics for Q2
30
VGS = 10V
4.5V
20
3.5V
3.0V
2.5V
10
1.6
1.4
VGS = 3.0V
1.2 3.5V
4.0V
4.5V
6.0V
1 10V
0
0 0.5 1 1.5 2
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1. On-Region Characteristics.
1.4
ID = 8.2A
VGS = 10V
1.2
1
0.8
0.6
-50
-25 0
25 50 75 100
TJ, JUNCTION TEMPERATURE (oC)
125
Figure 3. On-Resistance Variation with
Temperature.
30
VDS = 5V
25
20
15
10
5
0
1
TA = 125oC
25oC
-55oC
1.5 2 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3
0.8
0
10 20
ID, DRAIN CURRENT (A)
30
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.035
0.03
0.025
0.02
0.015
0.01
0.005
0
ID = 4.1A
TA = 125oC
TA = 25oC
2468
VGS, GATE TO SOURCE VOLTAGE (V)
10
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
10
VGS = 0V
1 TA = 125oC
25oC
0.1
0.01
-55oC
0.001
0
0.1 0.2 0.3 0.4 0.5
VSD, BODY DIODE FORWARD VOLTAGE (V)
0.6
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6994S Rev C2(W)


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Typical Characteristics for Q2
10
ID =8.2A
8
6
VDS = 10V
15V
20V
4
2
0
0 10 20 30 40 50
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
RDS(ON) LIMIT
10
1
VGS = 10V
0.1 SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
1ms
10ms
100ms
1s
10s
DC
100µs
0.01
0.1
1 10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 9. Maximum Safe Operating Area.
4000
3000
2000
f = 1MHz
VGS = 0 V
Ciss
1000
0
0
Crss
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 8. Capacitance Characteristics.
50
SINGLE PULSE
40 RθJA = 135°C/W
TA = 25°C
30
20
10
0
0.001
0.01
0.1 1 10
t1, TIME (sec)
100 1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
0.001
0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
RθJA(t) = r(t) * RθJA
RθJA = 135 °C/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
100 1000
FDS6994S Rev C2(W)


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Typical Characteristics for Q1
20
VGS = 10V
15
4.5V
3.5V
10
5 3.0V
0
0 0.5 1 1.5 2
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 11. On-Region Characteristics.
2.2
2
1.8
VGS = 3.5V
1.6
1.4
4.0V
4.5V
1.2
6.0V
1 10V
0.8
0
5 10 15
ID, DRAIN CURRENT (A)
20
Figure 12. On-Resistance Variation with
Drain Current and Gate Voltage.
1.6
ID = 6.9A
VGS = 10V
1.4
1.2
1
0.8
0.6
-50
-25
0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. On-Resistance Variation with
Temperature.
0.075
0.05
0.025
TA = 125oC
ID = 3.5A
TA = 25oC
0
2 4 6 8 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 14. On-Resistance Variation with
Gate-to-Source Voltage.
20
VDS = 5V
15
10
TA = 125oC
5
25oC
-55oC
0
1.5
2 2.5 3 3.5
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 15. Transfer Characteristics.
100
VGS = 0V
10
1
0.1
0.01
TA = 125oC
25oC
-55°C
0.001
0.0001
0
0.2 0.4 0.6 0.8
1
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.2
Figure 16. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDS6994S Rev C2(W)


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Typical Characteristics Q1
5
ID = 6.9A
4
3
VDS = 10V
15V
20V
2
1
0
0 2 4 6 8 10
Qg, GATE CHARGE (nC)
Figure 17. Gate Charge Characteristics.
100
10 RDS(ON) LIMIT
1
VGS = 10V
0.1
SINGLE PULSE
RθJA = 135oC/W
TA = 25oC
100µs
1ms
10ms
100ms
1s
10s
DC
0.01
0.01
0.1 1
10
VDS, DRAIN-SOURCE VOLTAGE (V)
100
Figure 19. Maximum Safe Operating Area.
1200
1000
800
600
f = 1 MHz
VGS = 0 V
Ciss
400
200
Crss
0
0
Coss
5 10 15 20 25
VDS, DRAIN TO SOURCE VOLTAGE (V)
30
Figure 18. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
RθJA = 135°C/W
TA = 25°C
0.1 1 10
t1, TIME (sec)
100 1000
Figure 20. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
t1, TIME (sec)
1
RθJA(t) = r(t) * RθJA
RθJA = 135oC/W
P(pk)
t1
t2
TJ - TA = P * RθJA(t)
Duty Cycle, D = t1 / t2
10 100 1000
Figure 21. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient thermal response will change depending on the circuit board design.
FDS6994S Rev C2(W)


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Typical Characteristics (continued) This section copied from FDS6984S datasheet
SyncFET Schottky Body Diode
Characteristics
Fairchild’s SyncFET process embeds a Schottky diode in
parallel with PowerTrench MOSFET. This diode exhibits
similar characteristics to a discrete external Schottky
diode in parallel with a MOSFET. Figure 22 shows the
reverse recovery characteristic of the FDS6994S.
10nS/DIV
Figure 22. FDS6994S SyncFET body diode
reverse recovery characteristic.
For comparison purposes, Figure 23 shows the reverse
recovery characteristics of the body diode of an
equivalent size MOSFET produced without SyncFET
(FDS6690A).
Schottky barrier diodes exhibit significant leakage at high
temperature and high reverse voltage. This will increase
the power in the device.
0.1
0.01
125oC
0.001
0.0001
25oC
0.00001
0
10 20
VDS, REVERSE VOLTAGE (V)
30
Figure 24. SyncFET body diode reverse
leakage versus drain-source voltage and
temperature.
0V
10nS/DIV
Figure 23. Non-SyncFET (FDS6690A) body
diode reverse recovery characteristic.
FDS6994S Rev C2(W)


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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not
intended to be an exhaustive list of all such trademarks.
ACEx™
ActiveArray™
Bottomless™
FACT Quiet Series™
GlobalOptoisolator™
GTO™
OCX™
OCXPro™
OPTOLOGIC®
SILENT SWITCHER®
SMART START™
SPM™
UniFET™
UltraFET®
VCX™
Build it Now™
CoolFET™
HiSeC™
I2C™
OPTOPLANAR™
PACMAN™
Stealth™
SuperFET™
Wire™
CROSSVOLTi-Lo
POP™
SuperSOT™-3
DOME™
ImpliedDisconnect™ Power247™
SuperSOT™-6
EcoSPARK™
E2CMOS™
EnSigna™
FACT™
FAST®
IntelliMAX™
ISOPLANAR™
LittleFET™
MICROCOUPLER™
MicroFET™
PowerEdge™
PowerSaver™
PowerTrench®
QFET®
QS™
SuperSOT™-8
SyncFET™
TCM™
TinyBoost™
TinyBuck™
FASTr™
MicroPak™
QT Optoelectronics™ TinyPWM™
FPS™
FRFET™
MICROWIRE™
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Across the board. Around the world.™
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(a) are intended for surgical implant into the body, or (b) support or
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accordance with instructions for use provided in the labeling, can be
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Definition of Terms
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First Production
No Identification Needed
Obsolete
Full Production
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This datasheet contains the design specifications for
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any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice to improve
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Semiconductor reserves the right to make changes at
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that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. I20


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