Fairchild Semiconductor Electronic Components Datasheet



FDPC8016S

MOSFET


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

October 2013
FDPC8016S
PowerTrench® Power Clip
25V Asymmetric Dual N-Channel MOSFET
Features
General Description
Q1: N-Channel
„ Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 20 A
„ Max rDS(on) = 4.7 mΩ at VGS = 4.5 V, ID = 18 A
Q2: N-Channel
„ Max rDS(on) = 1.4 mΩ at VGS = 10 V, ID = 35 A
„ Max rDS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 32 A
„ Low inductance packaging shortens rise/fall times, resulting in
lower switching losses
„ MOSFET integration enables optimum layout for lower circuit
inductance and reduced switch node ringing
„ RoHS Compliant
This device includes two specialized N-Channel MOSFETs in a
dual package. The switch node has been internally connected to
enable easy placement and routing of synchronous buck
converters. The control MOSFET (Q1) and synchronous
SyncFETTM (Q2) have been designed to provide optimal power
efficiency.
Applications
„ Computing
„ Communications
„ General Purpose Point of Load
PIN1
PIN1
PAD10
V+(HSD)
Top
Power Clip 5X6
Bottom
HSG
GR
V+
V+
PAD9
GND(LSS)
LSG HSG
SW GR
SW V+
SW V+
SW
LSG
SW
SW
SW
Pin Name Description
1 HSG HighSideGate
2 GR
Gate Return
Pin
3,4,10
5,6,7
Name
V+(HSD)
SW
Description
Pin
High Side Drain
8
Switching Node, Low Side Drain 9
Name
Description
LSG
Low Side Gate
GND(LSS) Low Side Source
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted
Symbol
VDS
VGS
ID
EAS
PD
TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous
-Continuous
-Pulsed
Single Pulse Avalanche Energy
Power Dissipation for Single Operation
Power Dissipation for Single Operation
Operating and Storage Junction Temperature Range
TC = 25 °C
TA = 25 °C
TA = 25 °C (Note 4)
(Note 3)
TC = 25 °C
TA = 25 °C
Q1
25Note5
Q2
25
±12 ±12
60
20Note1a
100
35Note1b
75 140
73 216
21
2.1Note1a
42
2.3 Note1b
-55 to +150
Units
V
V
A
mJ
W
°C
Thermal Characteristics
RθJC
RθJA
RθJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Ambient
6.0
60Note1a
130Note1c
3.0
55Note1b
120Note1d
°C/W
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
1
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Package Marking and Ordering Information
Device Marking
05OD/15OD
Device
FDPC8016S
Package
Power Clip 56
Reel Size
13 ”
Tape Width
12 mm
Quantity
3000 units
Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
IDSS
IGSS
Drain to Source Breakdown Voltage
ID = 250 μA, VGS = 0 V
ID = 1 mA, VGS = 0 V
Q1 25
Q2 25
Breakdown Voltage Temperature
Coefficient
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
Zero Gate Voltage Drain Current
VDS = 20 V, VGS = 0 V
VDS = 20 V, VGS = 0 V
Q1
Q2
Gate to Source Leakage Current
VGS = 12 V/-8 V, VDS= 0 V
VGS = 12 V/-8 V, VDS= 0 V
Q1
Q2
On Characteristics
VGS(th)
ΔVGS(th)
ΔTJ
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
rDS(on)
Drain to Source On Resistance
gFS Forward Transconductance
VGS = VDS, ID = 250 μA
VGS = VDS, ID = 1 mA
Q1 0.8
Q2 1.1
ID = 250 μA, referenced to 25 °C
ID = 10 mA, referenced to 25 °C
Q1
Q2
VGS = 10V, ID = 20 A
VGS = 4.5 V, ID = 18 A
VGS = 10 V, ID = 20 A,TJ =125 °C
Q1
VGS = 10V, ID = 35 A
VGS = 4.5 V, ID = 32 A
VGS = 10 V, ID = 35 A ,TJ =125 °C
Q2
VDS = 5 V, ID = 20 A
VDS = 5 V, ID = 35 A
Q1
Q2
Dynamic Characteristics
Ciss Input Capacitance
Coss
Output Capacitance
Crss Reverse Transfer Capacitance
Rg Gate Resistance
Q1:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q2:
VDS = 13 V, VGS = 0 V, f = 1 MHZ
Q1
Q2
Q1
Q2
Q1
Q2
Q1 0.1
Q2 0.1
Typ Max Units
V
24
28
mV/°C
1 μA
500 μA
±100
±100
nA
nA
1.3 2.5
1.5 2.5
V
-4
-3
mV/°C
2.8 3.8
3.4 4.7
3.9 5.3
mΩ
1.1 1.4
1.3 1.7
1.5 1.9
182
241
S
1695
4715
495
1195
54
159
0.4
0.5
2375
6600
710
1675
100
290
1.2
1.5
pF
pF
pF
Ω
Switching Characteristics
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qg Total Gate Charge
Qgs Gate to Source Gate Charge
Qgd Gate to Drain “Miller” Charge
Q1:
VDD = 13 V, ID = 20 A, RGEN = 6 Ω
Q2:
VDD = 13 V, ID = 35 A, RGEN = 6 Ω
VGS = 0 V to 10 V
Q1
VGS = 0 V to 4.5 V
VDD = 13 V, ID
= 20 A
Q2
VDD = 13 V, ID
= 35 A
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
8
13
16
24
ns
2
4
10
10
ns
24
38
38
61
ns
2
3
10
10
ns
25
67
35
94
nC
11
31
16
44
nC
3.4
10
nC
2.2
6.3
nC
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
2
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Electrical Characteristics TJ = 25 °C unless otherwise noted
Symbol
Parameter
Test Conditions
Type Min Typ Max Units
Drain-Source Diode Characteristics
VSD
Source to Drain Diode Forward Voltage
VGS = 0 V, IS = 20 A
VGS = 0 V, IS = 35 A
(Note 2)
(Note 2)
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
Q1
IF = 20 A, di/dt = 100 A/μs
Q2
IF = 35 A, di/dt = 200 A/μs
Q1
Q2
Q1
Q2
Q1
Q2
0.8 1.2
0.8 1.2
25 40
33 53
10 20
31 50
V
ns
nC
Notes:
1.RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by
the user's board design.
a. 60 °C/W when mounted on
a 1 in2 pad of 2 oz copper
b. 55 °C/W when mounted on
a 1 in2 pad of 2 oz copper
c. 130 °C/W when mounted on a
minimum pad of 2 oz copper
d. 120 °C/W when mounted on a
minimum pad of 2 oz copper
2 Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%.
3. Q1 :EAS of 73 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 7 A, VDD = 30 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 24 A.
Q2: EAS of 216 mJ is based on starting TJ = 25 oC; N-ch: L = 3 mH, IAS = 12 A, VDD = 25 V, VGS = 10 V. 100% test at L= 0.1 mH, IAS = 39 A.
4. Pulsed Id limited by junction temperature, td<=10 us. Please refer to SOA curve for more details.
5. The continuous VDS rating is 25 V; However, a pulse of 30 V peak voltage for no longer than 100 ns duration at 600 KHz frequency can be applied.
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
3
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
75
60
45
30
15
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6 0.8
VDS, DRAIN TO SOURCE VOLTAGE (V)
1.0
Figure 1. On Region Characteristics
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
3
VGS = 2.5 V
2 VGS = 3 V
1
VGS = 3.5 V
VGS = 4.5 V
VGS = 10 V
0
0 15 30 45 60 75
ID, DRAIN CURRENT (A)
Figure 2. Normalized On-Resistance
vs. Drain Current and Gate Voltage
1.6
1.5
ID = 20 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 3. Normalized On Resistance
vs. Junction Temperature
12
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
9
ID = 20 A
6
TJ = 125 oC
3
TJ = 25 oC
0
1 2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 4. On-Resistance vs. Gate to
Source Voltage
75
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
60
VDS = 5 V
45
30
15
0
1.0
TJ = 150 oC
TJ = 25 oC
TJ = -55 oC
1.5 2.0 2.5
VGS, GATE TO SOURCE VOLTAGE (V)
3.0
Figure 5. Transfer Characteristics
100
VGS = 0 V
10
1
TJ = 150 oC
0.1
TJ = 25 oC
0.01
0.001
0.0
TJ = -55 oC
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 6. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
4
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 20 A
8
VDD = 13 V
6
VDD = 10 V
4
VDD = 15 V
2
0
0 6 12 18 24 30
Qg, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics
10000
1000
Ciss
100
f = 1 MHz
VGS = 0 V
Coss
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
Figure8. Capacitancevs.Drain
to Source Voltage
30
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1 1 10
tAV, TIME IN AVALANCHE (ms)
Figure9. UnclampedInductive
Switching Capability
100
70
60
50
VGS = 10 V
40
VGS = 4.5 V
30
20
RθJC = 6.0 oC/W
10
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
500
100
10 μs
10
THIS AREA IS
LIMITED BY rDS(on)
1
SINGLE PULSE
TJ = MAX RATED
RθJC = 6.0 oC/W
TC = 25 oC
CURVE BENT TO
MEASURED DATA
0.1
0.1 1 10
100 μs
1 ms
10 ms
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 11. Forward Bias Safe
Operating Area
5000
1000
100
SINGLE PULSE
RθJC = 6.0 oC/W
TC = 25 oC
10
10-5 10-4 10-3 10-2 10-1
t, PULSE WIDTH (sec)
Figure 12. Single Pulse Maximum
Power Dissipation
1
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
5
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (Q1 N-Channel) TJ = 25°C unless otherwise noted
2
1
0.1
0.01
0.005
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
SINGLE PULSE
PDM
t1
t2
NOTES:
ZθJC (t) = r(t) x RθJc
RθJC = 6.0 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction-to-Case Transient Thermal Response Curve
1
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
6
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
140
120
100
80
60
40
20
0
0.0
VGS = 10 V
VGS = 4.5 V
VGS = 3.5 V
VGS = 3 V
VGS = 2.5 V
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
0.2 0.4 0.6
VDS, DRAIN TO SOURCE VOLTAGE (V)
0.8
Figure 14. On- Region Characteristics
6.0
VGS = 2.5 V
4.5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
3.0
VGS = 3 V
1.5
0.0
0
VGS = 3.5 V VGS = 4.5 V VGS = 10 V
20 40 60 80 100 120 140
ID, DRAIN CURRENT (A)
Figure 15. Normalized on-Resistance vs. Drain
Current and Gate Voltage
1.6
1.5
ID = 35 A
VGS = 10 V
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
-75 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (oC)
Figure 16. Normalized On-Resistance
vs. Junction Temperature
5
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
4
ID = 35 A
3
2
TJ = 125 oC
1
TJ = 25 oC
0
1 2 3 4 5 6 7 8 9 10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 17. On-Resistance vs. Gate to
Source Voltage
140
VDS = 5 V
120
100
TJ = 125 oC
80
60
TJ = 25 oC
TJ = -55 oC
40
20
0
1
PULSE DURATION = 80 μs
DUTY CYCLE = 0.5% MAX
23
VGS, GATE TO SOURCE VOLTAGE (V)
4
Figure 18. Transfer Characteristics
200
100 VGS = 0 V
10
1
0.1
0.01
TJ = 125 oC
TJ = 25 oC
TJ = -55 oC
0.001
0.0
0.2 0.4 0.6 0.8
VSD, BODY DIODE FORWARD VOLTAGE (V)
1.0
Figure 19. Source to Drain Diode
Forward Voltage vs. Source Current
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
7
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (Q2 N-Channel) TJ = 25°C unless otherwise noted
10
ID = 35 A
8
VDD = 13 V
6
VDD = 10 V
4
VDD = 15 V
2
0
0 20 40 60 80
Qg, GATE CHARGE (nC)
Figure 20. Gate Charge Characteristics
10000
1000
Ciss
Coss
100
f = 1 MHz
VGS = 0 V
Crss
10
0.1
1 10
VDS, DRAIN TO SOURCE VOLTAGE (V)
25
Figure 21. Capacitance vs. Drain
to Source Voltage
50
TJ = 25 oC
10
TJ = 100 oC
TJ = 125 oC
1
0.001
0.01 0.1 1 10 100
tAV, TIME IN AVALANCHE (ms)
1000
Figure 22. Unclamped Inductive
Switching Capability
1000
100 10 μs
10 THIS AREA IS
LIMITED BY rDS(on)
SINGLE PULSE
1 TJ = MAX RATED
RθJC = 3.0 oC/W
TC = 25 oC
0.1
0.1 1
CURVE BENT TO
MEASURED DATA
10
100 μs
1 ms
10 ms
DC
80
VDS, DRAIN to SOURCE VOLTAGE (V)
Figure 24. Forward Bias Safe
Operating Area
160
140
120
VGS = 10 V
100
80
Limited by Package
60
RθJC = 3.0 oC/W
40
VGS = 4.5 V
20
0
25 50 75 100 125
TC, CASE TEMPERATURE (oC)
150
Figure 23. Maximum Continuous Drain
Current vs. Case Temperature
10000
1000
SINGLE PULSE
RθJC = 3.0 oC/W
TC = 25 oC
100
10
10-5
10-4
10-3
10-2
10-1
t, PULSE WIDTH (sec)
Figure 25. Single Pulse Maximum
Power Dissipation
1
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
8
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (Q2 N-Channel) TJ = 25 °C unless otherwise noted
2
1
0.1
0.01
0.003
10-5
DUTY CYCLE-DESCENDING ORDER
D = 0.5
0.2
0.1
0.05
0.02
0.01
PDM
t1
t2
SINGLE PULSE
NOTES:
ZθJC (t) = r(t) x RθJc
RθJC = 3.0 oC/W
DUTY FACTOR: D = t1/ t2
TJ -TC = PDM x ZθJC(t)
10-4
10-3
10-2
10-1
t, RECTANGULAR PULSE DURATION (sec)
Figure 26. Junction-to-Case Transient Thermal Response Curve
1
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
9
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Typical Characteristics (continued)
SyncFETTM Schottky body diode
Characteristics
Fairchild’s SyncFETTM process embeds a Schottky diode in
parallel with PowerTrench® MOSFET. This diode exhibits similar
characteristics to a discrete external Schottky diode in parallel
with a MOSFET. Figure 27 shows the reverses recovery
characteristic of the FDPC8016S.
Schottky barrier diodes exhibit significant leakage at high tem-
perature and high reverse voltage. This will increase the power
in the device.
40
35
30
25
20
15
10
5
0
-5
50
di / dt = 200 A/μS
100 150 200 250 300 350 400
TIME (ns)
10-2
10-3
10-4
10-5
10-6
0
TJ = 125 oC
TJ = 100 oC
TJ = 25 oC
5 10 15 20
VDS, REVERSE VOLTAGE (V)
25
Figure 27. FDPC8016S SyncFETTM Body
Diode Reverse Recovery Characteristic
Figure 28. SyncFETTM Body Diode Reverse
Leakage vs. Drain-source Voltage
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
10
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

Dimensional Outline and Pad Layout
0.10 C
2X
4
5.10
4.90
PKG
CL
1
PKG CL
PIN #1 5
8
INDICATOR
TOP VIEW
A
B
5.00
4.56
4.20
1.27
43 2
1
1.01
3.30
2.48
2.08
6.10
5.90
0.10 C
2X
6.60
0.00
2.65
0.82
5 6 78
0.75
0.40
0.83
1.43
1.98
2.48
3.30
SEE
DETAIL A
RECOMMENDED LAND PATTERN
SIDE VIEW
3.15±.05
3.81
1.27
56 7 8
0.10
0.05
CAB
C
0.51
0.65±.05
2.46±.05
0.91±.05
0.49±.05
4 32
1
0.51±.05
3.90±.05
4.22±.05
5.00±.05
BOTTOM VIEW
1.57±.05
0.65±.05
1.37±.05
0.53±.05
0.48±.05
NOTES: UNLESS OTHERWISE SPECIFIED
A) DOES NOT FULLY CONFORM TO
JEDEC REGISTRATION, MO-229,
DATED 11/2001.
B) ALL DIMENSIONS ARE IN
MILLIMETERS.
C) DIMENSIONS DO NOT INCLUDE
BURRS OR MOLD FLASH. MOLD
FLASH OR BURRS DOES NOT
EXCEED 0.10MM.
D) DIMENSIONING AND TOLERANCING
PER ASME Y14.5M-1994.
E) DRAWING FILE NAME:
0.10 C
0.08 C
0.80
0.70
0.30 0.05
0.20 0.00
(SCALE: 2X)
C
SEATING
PLANE
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
11
www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

TRADEMARKS
The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not
intended to be an exhaustive list of all such trademarks.
AccuPower™
AX-CAP®*
BitSiC™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT
CTL™
Current Transfer Logic™
DEUXPEED®
Dual Cool™
EcoSPARK®
EfficentMax™
ESBC™
®
Fairchild®
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FPS™
F-PFS™
FRFET®
Global Power ResourceSM
GreenBridge™
Green FPS™
Green FPS™ e-Series™
Gmax
GTO™
IntelliMAX™
ISOPLANAR™
Marking Small Speakers Sound Louder
and Better™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MicroPak2™
MillerDrive™
MotionMax™
mWSaver®
OptoHiT™
OPTOLOGIC®
OPTOPLANAR®
®
tm
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
Saving our world, 1mW/W/kW at a time™
SignalWise™
SmartMax™
SMART START™
Solutions for Your Success™
SPM®
STEALTH™
SuperFET®
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS®
SyncFET™
Sync-Lock™
®*
TinyBoost®
TinyBuck®
TinyCalc™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TranSiC™
TriFault Detect™
TRUECURRENT®*
μSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
VoltagePlus™
XS™
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY
PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY
THEREIN, WHICH COVERS THESE PRODUCTS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE
EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used here in:
1. Life support devices or systems are devices or systems which, (a) are
intended for surgical implant into the body or (b) support or sustain life,
and (c) whose failure to perform when properly used in accordance with
instructions for use provided in the labeling, can be reasonably
expected to result in a significant injury of the user.
2. A critical component in any component of a life support, device, or
system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or
effectiveness.
ANTI-COUNTERFEITING POLICY
Fairchild Semiconductor Corporation’s Anti-Counterfeiting Policy. Fairchild’s Anti-Counterfeiting Policy is also stated on our external website,
www.Fairchildsemi.com, under Sales Support.
Counterfeiting of semiconductor parts is a growing problem in the industry. All manufactures of semiconductor products are experiencing counterfeiting of their
parts. Customers who inadvertently purchase counterfeit parts experience many problems such as loss of brand reputation, substandard performance, failed
application, and increased cost of production and manufacturing delays. Fairchild is taking strong measures to protect ourselves and our customers from the
proliferation of counterfeit parts. Fairchild strongly encourages customers to purchase Fairchild parts either directly from Fairchild or from Authorized Fairchild
Distributors who are listed by country on our web page cited above. Products customers buy either from Fairchild directly or from Authorized Fairchild
Distributors are genuine parts, have full traceability, meet Fairchild’s quality standards for handing and storage and provide access to Fairchild’s full range of
up-to-date technical and product information. Fairchild and our Authorized Distributors will stand behind all warranties and will appropriately address and
warranty issues that may arise. Fairchild will not provide any warranty coverage or other assistance for parts bought from Unauthorized Sources. Fairchild is
committed to combat this global problem and encourage our customers to do their part in stopping this practice by buying direct or from authorized distributors.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Obsolete
Full Production
Not In Production
©2013 Fairchild Semiconductor Corporation
FDPC8016S Rev.C7
Definition
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
12 www.fairchildsemi.com


FDPC8016S Datasheet PDF
No Preview Available !

Click to Download PDF File for PC

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Literature Distribution Center for ON Semiconductor
19521 E. 32nd Pkwy, Aurora, Colorado 80011 USA
Phone: 3036752175 or 8003443860 Toll Free USA/Canada
Fax: 3036752176 or 8003443867 Toll Free USA/Canada
Email: orderlit@onsemi.com
© Semiconductor Components Industries, LLC
N. American Technical Support: 8002829855 Toll Free
USA/Canada
Europe, Middle East and Africa Technical Support:
Phone: 421 33 790 2910
Japan Customer Focus Center
Phone: 81358171050
www.onsemi.com
1
ON Semiconductor Website: www.onsemi.com
Order Literature: http://www.onsemi.com/orderlit
For additional information, please contact your local
Sales Representative
www.onsemi.com




Click to Download PDF File for PC





HOME