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TrenchStop® Series
IKW08T120
Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
C
Approx. 1.0V reduced VCE(sat)
and 0.5V reduced VF compared to BUP305D
Short circuit withstand time – 10s
Designed for :
G
E
- Frequency Converters
- Uninterrupted Power Supply
TrenchStop® and Fieldstop technology for 1200 V applications
offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
PG-TO-247-3
NPT technology offers easy parallel switching capability due to
positive temperature coefficient in VCE(sat)
Low EMI
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE diode
Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW08T120 1200V 8A
1.7V
150C K08T120
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage
DC collector current
TC = 25C
TC = 100C
Pulsed collector current, tp limited by Tjmax
Turn off safe operating area
VCE 1200V, Tj 150C
Diode forward current
TC = 25C
TC = 100C
Diode pulsed current, tp limited by Tjmax
Gate-emitter voltage
Short circuit withstand time2)
VGE = 15V, VCC 1200V, Tj 150C
Power dissipation
TC = 25C
Operating junction temperature
Storage temperature
VCE
IC
ICpuls
-
IF
IFpuls
VGE
tSC
Ptot
Tj
Tstg
Package
PG-TO-247-3
Value
1200
16
8
24
24
16
8
24
20
10
70
-40...+150
-55...+150
Unit
V
A
V
s
W
C
1 J-STD-020 and JESD-022
2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
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TrenchStop® Series
Soldering temperature, 1.6mm (0.063 in.) from case for 10s -
IKW08T120
260
IFAG IPC TD VLS
2
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TrenchStop® Series
IKW08T120
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Symbol
RthJC
RthJCD
RthJA
Conditions
Max. Value
1.7
2.3
40
Unit
K/W
Electrical Characteristic, at Tj = 25 C, unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Diode forward voltage
Gate-emitter threshold voltage
Zero gate voltage collector current
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Symbol
Conditions
V(BR)CES
VCE(sat)
VF
VGE(th)
ICES
VGE=0V, IC=0.5mA
VGE = 15V, IC=8A
Tj=25C
Tj=125C
Tj=150C
VGE=0V, IF=8A
Tj=25C
Tj=125C
Tj=150C
IC=0.3mA,VCE=VGE
VCE=1200V,
VGE=0V
Tj=25C
Tj=150C
IGES
gfs
RGint
VCE=0V,VGE=20V
VCE=20V, IC=8A
min.
1200
-
-
-
-
-
-
5.0
-
-
-
-
Value
typ.
-
1.7
2.0
2.2
1.7
1.7
1.7
5.8
-
-
-
5
none
Unit
max.
-V
2.2
-
-
2.2
-
-
6.5
mA
0.2
2.0
100 nA
-S
Ω
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TrenchStop® Series
IKW08T120
Dynamic Characteristic
Input capacitance
Ciss
VCE=25V,
- 600 - pF
Output capacitance
Coss
VGE=0V,
- 36 -
Reverse transfer capacitance
Crss
f=1MHz
- 28 -
Gate charge
QGate
VCC=960V, IC=8A
-
53
- nC
VGE=15V
Internal emitter inductance
LE
- 13 - nH
measured 5mm (0.197 in.) from case
Short circuit collector current1)
IC(SC)
VGE=15V,tSC10s
-
48
-A
VCC = 600V,
Tj = 25C
Switching Characteristic, Inductive Load, at Tj=25 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=25C,
VCC=600V,IC=8A,
VGE=0/15V,
RG=81,
L2)=180nH,
C2)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=25C,
VR=600V, IF=8A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
23
450
70
0.67
0.7
1.37
80
1.0
13
420
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Allowed number of short circuits: <1000; time between short circuits: >1s.
2) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
4
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TrenchStop® Series
IKW08T120
Switching Characteristic, Inductive Load, at Tj=150 C
Parameter
Symbol
Conditions
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during tb
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
trr
Qrr
Irrm
dirr/dt
Tj=150C,
VCC=600V, IC=8A,
VGE=0/15V,
RG= 81,
L1)=180nH,
C1)=39pF
Energy losses include
“tail” and diode
reverse recovery.
Tj=150C
VR=600V, IF=8A,
diF/dt=600A/s
min.
-
-
-
-
-
-
-
-
-
-
-
Value
typ.
40
26
570
140
1.08
1.2
2.28
200
2.3
20
320
Unit
max.
- ns
-
-
-
- mJ
-
-
- ns
- µC
-A
- A/s
1) Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E.
IFAG IPC TD VLS
5
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TrenchStop® Series
IKW08T120
20A TC=80°C
15A
TC=110°C
10A
Ic
5A
Ic
0A
10Hz
100Hz
1kHz
10kHz 100kHz
f, SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(Tj 150C, D = 0.5, VCE = 600V,
VGE = 0/+15V, RG = 81)
tp=2µs
10A
10µs
1A 50µs
150µs
500µs
0,1A 20ms
DC
0,01A
1V
10V
100V
1000V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 2. Safe operating area
(D = 0, TC = 25C,
Tj 150C;VGE=15V)
70W
60W
50W
40W
30W
20W
10W
0W
25°C
50°C
75°C 100°C 125°C
Figure 3.
TC, CASE TEMPERATURE
Power dissipation as a function of
case temperature
(Tj 150C)
15A
10A
5A
0A
25°C
75°C
125°C
Figure 4.
TC, CASE TEMPERATURE
Collector current as a function of
case temperature
(VGE 15V, Tj 150C)
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TrenchStop® Series
IKW08T120
20A
VGE=17V
15V
15A
13V
11V
10A 9V
7V
5A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 5. Typical output characteristic
(Tj = 25°C)
20A
VGE=17V
15V
15A
13V
11V
10A 9V
7V
5A
0A
0V 1V 2V 3V 4V 5V 6V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 6. Typical output characteristic
(Tj = 150°C)
20A
15A
10A
5A
TJ=150°C
25°C
0A
0V 2V 4V 6V 8V 10V 12V
VGE, GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(VCE=20V)
3,0V
2,5V
IC=15A
2,0V
1,5V
1,0V
IC=8A
IC=5A
IC=2.5A
0,5V
0,0V
-50°C
0°C
50°C
100°C
Figure 8.
TJ, JUNCTION TEMPERATURE
Typical collector-emitter
saturation voltage as a function of
junction temperature
(VGE = 15V)
IFAG IPC TD VLS
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TrenchStop® Series
IKW08T120
td(off)
100ns tf
td(on)
10ns
tr
td(off)
tf
100 ns
td(on)
10 ns
tr
1ns
5A
10A 15A
IC, COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
1 ns
    
RG, GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
td(off)
100ns
tf
td(on)
tr
10ns
0°C
50°C
100°C
150°C
TJ, JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=8A, RG=81Ω,
Dynamic test circuit in Figure E)
7V
6V
5V max.
typ.
4V
min.
3V
2V
1V
0V
-50°C 0°C 50°C 100°C 150°C
TJ, JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage as
a function of junction temperature
(IC = 0.3mA)
IFAG IPC TD VLS
8
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TrenchStop® Series
IKW08T120
*) Eon and Etsinclude losses
due to diode recovery
6,0mJ
Ets*
4,0mJ
2,0mJ
Eon*
Eoff
0,0mJ
5A
10A 15A
IC, COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, RG=81Ω,
Dynamic test circuit in Figure E)
3,2 mJ
*) Eon and Ets include losses
due to diode recovery
2,8 mJ
Ets*
2,4 mJ
2,0 mJ
Eoff
1,6 mJ
1,2 mJ
Eon*
0,8 mJ
0,4 mJ
0,0 mJ
    
RG, GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load, TJ=150°C,
VCE=600V, VGE=0/15V, IC=8A,
Dynamic test circuit in Figure E)
2.0mJ
*) Eon and Ets include losses
due to diode recovery
*) Eon and Ets include losses
Ets* due to diode recovery
3mJ
1.5mJ
1.0mJ
0.5mJ
Eoff
Eon*
0.0mJ
25°C
50°C
75°C 100°C 125°C
TJ, JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction
temperature
(inductive load, VCE=600V,
VGE=0/15V, IC=8A, RG=81Ω,
Dynamic test circuit in Figure E)
2mJ
Ets*
1mJ Eoff
Eon*
0mJ
400V
500V
600V
700V
800V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 16. Typical switching energy losses
as a function of collector emitter
voltage
(inductive load, TJ=150°C,
VGE=0/15V, IC=8A, RG=81Ω,
Dynamic test circuit in Figure E)
IFAG IPC TD VLS
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TrenchStop® Series
IKW08T120
15V
240V
960V
10V
5V
0V
0nC
25nC
50nC
QGE, GATE CHARGE
Figure 17. Typical gate charge
(IC=8 A)
1nF
Ciss
100pF
Coss
Crss
10pF 0V
10V 20V
VCE, COLLECTOR-EMITTER VOLTAGE
Figure 18. Typical capacitance as a function
of collector-emitter voltage
(VGE=0V, f = 1 MHz)
15µs
10µs
5µs
75A
50A
25A
0µs
12V 14V 16V
VGE, GATE-EMITTETR VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(VCE=600V, start at TJ=25°C)
0A
12V 14V 16V 18V
VGE, GATE-EMITTETR VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-
emitter voltage
(VCE 600V, Tj 150C)
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TrenchStop® Series
IKW08T120
VCE
600V
30A 30A
600V
400V
200V
20A 20A
IC
10A 10A
400V
200V
IC
0V
0us
0.5us
1us
1.5us
0A
t, TIME
Figure 21. Typical turn on behavior
(VGE=0/15V, RG=81Ω, Tj = 150C,
Dynamic test circuit in Figure E)
VCE
0A
0us
0.5us
1us
1.5us
0V
t, TIME
Figure 22. Typical turn off behavior
(VGE=15/0V, RG=81Ω, Tj = 150C,
Dynamic test circuit in Figure E)
100K/W D=0.5
0.2
0.1
0.05
10-1K/W
R,(K/W)
0.187
0.575
0.589
0.350
R1
, (s)
1.73*10-1
2.75*10-2
2.57*10-3
2.71*10-4
R2
0.02
0.01
single pulse
C1=1/R1 C2=2/R2
D=0.5
100K/W
0.2
0.1
0.05
10-1K/W
0.02
R,(K/W)
0.552
0.732
0.671
0.344
R1
0.01
single pulse
C1=1/R1
, (s)
7.23*10-2
8.13*10-3
1.09*10-3
1.55*10-4
R2
C2=2/R2
10-2K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 23. IGBT transient thermal resistance
(D = tp / T)
10-2K/W
10µs 100µs 1ms 10ms 100ms
tP, PULSE WIDTH
Figure 24. Diode transient thermal
impedance as a function of pulse
width
(D=tP/T)
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TrenchStop® Series
IKW08T120
500ns
400ns
2µC TJ=150°C
300ns
200ns
TJ=150°C
100ns
TJ=25°C
0ns
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery time as
a function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
1µC
TJ=25°C
0µC
200A/µs
400A/µs
600A/µs
800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 24. Typical reverse recovery charge
as a function of diode current
slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
TJ=150°C
25A
20A TJ=25°C
15A
10A
5A
0A
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 25. Typical reverse recovery current
as a function of diode current
slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
-600A/µs
TJ=25°C
-500A/µs
-400A/µs
-300A/µs
TJ=150°C
-200A/µs
-100A/µs
-0A/µs
200A/µs 400A/µs 600A/µs 800A/µs
diF/dt, DIODE CURRENT SLOPE
Figure 26. Typical diode peak rate of fall of
reverse recovery current as a
function of diode current slope
(VR=600V, IF=8A,
Dynamic test circuit in Figure E)
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TrenchStop® Series
IKW08T120
TJ=25°C
20A
150°C
2,0V
IF=15A
1,5V
8A
5A
2,5A
10A 1,0V
0,5V
0A
0V 1V 2V
VF, FORWARD VOLTAGE
Figure 27. Typical diode forward current as
a function of forward voltage
0,0V
-50°C
0°C
50°C 100°C
TJ, JUNCTION TEMPERATURE
Figure 28. Typical diode forward voltage as a
function of junction temperature
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IKW08T120
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TrenchStop® Series
IKW08T120
i,v
di /dt
F
I
F
I
rrm
t =t +t
rr S F
Q =Q +Q
rr S
F
t
rr
tt
SF
QQ
SF
10% I
t
rrm
di /dt
90% I r r
rrm
V
R
Figure A. Definition of switching times
Figure C. Definition of diodes
switching characteristics
1
r1
Tj (t)
p(t) r1
2
r2
r2
n
rn
rn
TC
Figure D. Thermal equivalent
circuit
Figure B. Definition of switching losses
IFAG IPC TD VLS
15
Figure E. Dynamic test circuit
Leakage inductance L=180nH
an d Stray capacity C=39pF.
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TrenchStop® Series
IKW08T120
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2013 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or
any information regarding the application of the device, Infineon Technologies hereby disclaims any and all
warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual
property rights of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the
types in question, please contact the nearest Infineon Technologies Office.
The Infineon Technologies component described in this Data Sheet may be used in life-support devices or
systems and/or automotive, aviation and aerospace applications or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the
failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted in the
human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable
to assume that the health of the user or other persons may be endangered.
IFAG IPC TD VLS
16
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