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Diotec


2N2222A

General purpose Si-Epitaxial PlanarTransistors


2N2222A Datasheet PDF
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PN2222A / 2N2222A
PN2222A / 2N2222A
NPN
General purpose Si-Epitaxial PlanarTransistors
Si-Epitaxial Planar-Transistoren für universellen Einsatz
Version 2005-11-17
Power dissipation
Verlustleistung
E BC
Plastic case
Kunststoffgehäuse
Weight approx. – Gewicht ca.
2 x 2.54
Dimensions / Maße [mm]
Plastic material has UL classification 94V-0
Gehäusematerial UL94V-0 klassifiziert
Standard packaging taped in ammo pack
Standard Lieferform gegurtet in Ammo-Pack
NPN
625 mW
TO-92
(10D3)
0.18 g
Maximum ratings (TA = 25°C)
Collector-Emitter-volt. - Kollektor-Emitter-Spannung E open
Collector-Emitter-volt. - Kollektor-Emitter-Spannung B open
Emitter-Base-voltage - Emitter-Basis-Spannung
C open
Power dissipation – Verlustleistung
Collector current – Kollektorstrom (dc)
Peak Collector current – Kollektor-Spitzenstrom (tp < 5 ms)
Junction temperature – Sperrschichttemperatur
Storage temperature – Lagerungstemperatur
VCB0
VCE0
VEB0
Ptot
IC
ICM
Tj
TS
Grenzwerte (TA = 25°C)
PN2222A / 2N2222A
75 V
40 V
6V
625 mW 1)
600 mA
800 mA
-65...+150°C
-65…+150°C
Characteristics (Tj = 25°C)
Collector-Base cutoff current – Kollektor-Basis-Reststrom
VCB = 60 V
Collector saturation voltage – Kollektor-Sättigungsspannung
IC = 150 mA, IB = 15 mA 2)
IC = 500 mA, IB = 50 mA 2)
Base saturation-voltage – Basis-Sättigungsspannung
IC = 150 mA, IB = 15 mA 2)
IC = 500 mA, IB = 50 mA 2)
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
ICB0
– 10 nA
VCEsat
VCEsat
– 0.3 V
– 1V
VBEsat
0.6 V
1.2 V
VBEsat
– 2V
1 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
© Diotec Semiconductor AG
http://www.diotec.com/
1


2N2222A Datasheet PDF
No Preview Available !

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Characteristics (Tj = 25°C)
DC current gain – Kollektor-Basis-Stromverhältnis
IC = 0.1 mA, VCE = 10 V
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 150 mA, VCE = 10 V 1)
IC = 500 mA, VCE = 10 V 1)
Gain-Bandwidth Product – Transitfrequenz
IC = 20 mA, VCE = 20 V, f = 100 MHz
Collector-Base Capacitance – Kollektor-Basis-Kapazität
VCB = 10 V, IE =ie = 0, f = 1 MHz
Emitter-Base Capaciance – Emitter-Basis-Kapazität
VEB = 0.5 V, IC =ic = 0, f = 1 MHz
Thermal resistance junction to ambient air
Wärmewiderstand Sperrschicht – umgebende Luft
Recommended complementary PNP transistors
Empfohlene komplementäre PNP-Transistoren
PN2222A / 2N2222A
Kennwerte (Tj = 25°C)
Min.
Typ.
Max.
hFE 35
hFE 50
hFE 75
hFE 100
hFE 40
fT 250 MHz
300
CCB0
– 8 pF
CEB0
– 30 pF
RthA < 200 K/W 2)
PN2907A / 2N2907A
120
[%]
100
80
60
40
20
Ptot
0
0 TA 50 100 150 [°C]
Power dissipation versus ambient temperature 1)
Verlustleistung in Abh. von d. Umgebungstemp.1)
1 Tested with pulses tp = 300 µs, duty cycle 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis 2%
2 Valid if leads are kept at ambient temperature at a distance of 2 mm from case
Gültig wenn die Anschlussdrähte in 2 mm Abstand vom Gehäuse auf Umgebungstemperatur gehalten werden
2
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© Diotec Semiconductor AG




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