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2N2222A

Small Signal Switching Transistor


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2N2222A
Small Signal Switching
Transistor
NPN Silicon
Features
MIL−PRF−19500/255 Qualified
Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Characteristic
Symbol Value
Unit
Collector −Emitter Voltage
Collector −Base Voltage
Emitter −Base Voltage
Collector Current − Continuous
Total Device Dissipation @ TA = 25°C
Total Device Dissipation @ TC = 25°C
Operating and Storage Junction
Temperature Range
VCEO
VCBO
VEBO
IC
PT
PT
TJ, Tstg
50
75
6.0
800
500
1.0
−65 to
+200
Vdc
Vdc
Vdc
mAdc
mW
W
°C
THERMAL CHARACTERISTICS
Characteristic
Symbol Max Unit
Thermal Resistance, Junction to Ambient
RqJA
325 °C/W
Thermal Resistance, Junction to Case
RqJC
150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
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COLLECTOR
3
2
BASE
1
EMITTER
TO−18
CASE 206AA
STYLE 1
ORDERING INFORMATION
Device
Package
Shipping
JAN2N2222A
JANTX2N2222A TO−18
Bulk
JANTXV2N2222A
© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 2
1
Publication Order Number:
2N2222A/D


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2N2222A
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min Max
Unit
OFF CHARACTERISTICS
Collector −Emitter Breakdown Voltage
(IC = 10 mAdc)
V(BR)CEO
50
Vdc
Collector−Base Cutoff Current
(VCB = 75 Vdc)
(VCB = 60 Vdc)
Emitter−Base Cutoff Current
(VEB = 6.0 Vdc)
(VEB = 4.0 Vdc)
Collector−Emitter Cutoff Current
(VCE = 50 Vdc)
ICBO
IEBO
ICES
− 10 mAdc
− 10 nAdc
− 10 mAdc
− 10 nAdc
− 50 nAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = 0.1 mAdc, VCE = 10 Vdc)
(IC = 1.0 mAdc, VCE = 10 Vdc)
(IC = 10 mAdc, VCE = 10 Vdc)
(IC = 150 mAdc, VCE = 10 Vdc)
(IC = 500 mAdc, VCE = 10 Vdc)
Collector −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
Base −Emitter Saturation Voltage
(IC = 150 mAdc, IB = 15 mAdc)
(IC = 500 mAdc, IB = 50 mAdc)
SMALL− SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = 20 mAdc, VCE = 20 Vdc, f = 100 MHz)
Small−Signal Current Gain
(IC = 1.0 mAdc, VCE = 10 Vdc, f = 1 kHz)
Input Capacitance
(VEB = 0.5 Vdc, IC = 0, 100 kHz f 1.0 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0,100 kHz f 1.0 MHz )
SWITCHING (SATURATED) CHARACTERISTICS
Turn−On Time
(Reference Figure in MIL−PRF−19500/255)
hFE
VCE(sat)
VBE(sat)
|hfe|
hfe
Cibo
Cobo
ton
50 −
75 325
100 −
100 300
30 −
− 0.3
− 1.0
0.6 1.2
− 2.0
2.5 −
50 −
− 25
− 8.0
− 35
Vdc
Vdc
pF
pF
ns
Turn−Off Time
(Reference Figure in MIL−PRF−19500/255)
toff − 300 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle 2.0%.
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2N2222A
400
150°C
350
300
250 25°C
200
150
−55°C
100
50
0 VCE = 10 V
0.1 1
10 100
IC, COLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
1.2
1.0
−55°C
0.8
25°C
0.6
150°C
0.4
0.2
0 IC/IB = 10
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 2. Base−Emitter Saturation Voltage
0.4
IC/IB = 10
0.3
0.2
0.1
150°C
25°C
−55°C
0
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 3. Collector−Emitter Saturation Voltage
1.0
0.10
IC = 10 mA
100 mA
300 mA
500 mA
0.01
0.01
0.10 1 10
IB, BASE CURRENT (mA)
Figure 5. Collector Saturation Region
1.1
1.0 VCE = 1 V
0.9
−55°C
0.8 25°C
0.7
0.6 150°C
0.5
0.4
0.3
0.2
0.1
0
0.1 1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 4. Base−Emitter Voltage
25 TJ = 25°C
fTEST = 10 kHz
20
15
10
5
0
0 1 23 4
VBE, BASE−EMITTER (V)
Figure 6. Input Capacitance
5
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2N2222A
25
20
15
10
5
0
0
TJ = 25°C
fTEST = 10 kHz
350
300
250
200
150
100
50
2 4 6 8 10 12 14 16
VBC, BASE−COLLECTOR VOLTAGE (V)
Figure 7. Output Capacitance
18
20
0
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 8. Current Gain Bandwidth Product
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2N2222A
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA
ISSUE A
DETAIL X
U
RF
NOTE 5
B
A
B
PC
L
A
SEATING
PLANE
K
3X D NOTES 4 & 6
0.007 (0.18MM) A B S C M
U
E
T
NOTE 7
DETAIL X
H
M
C
N
J
2
13
LEAD IDENTIFICATION
DETAIL
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN­
SIONS A, B, AND T.
MILLIMETERS
INCHES
DIM MIN MAX MIN MAX
A 5.31 5.84 0.209 0.230
B 4.52 4.95 0.178 0.195
C 4.32 5.33 0.170 0.210
D 0.41 0.53 0.016 0.021
E --- 0.76 --- 0.030
F 0.41 0.48 0.016 0.019
H 0.91 1.17 0.036 0.046
J 0.71 1.22 0.028 0.048
K 12.70 19.05 0.500 0.750
L 6.35 --- 0.250 ---
M 45_BSC
N 2.54 BSC
45_BSC
0.100 BSC
P --- 1.27 --- 0.050
R 1.37 BSC
0.054 BSC
T --- 0.76 --- 0.030
U 2.54 --- 0.100 ---
STYLE 1:
PIN 1.
2.
3.
EMITTER
BASE
COLLECTOR
ON Semiconductor and
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2N2222A/D




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