nELL
nELL


N-HFA15TB60

Ultrafast Soft Recovery Diode


N-HFA15TB60 Datasheet PDF
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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
FRED
Ultrafast Soft Recovery Diode, 15 A
FEATURES
Ultrafast recovery
Ultrasoft recovery
Very low I RRM
Very low Q rr
Specified at operating conditions
Lead (Pb)-free
Designed and qualified for industrial level
BENEFITS
Reduced RFI and EMI
Reduced power loss in diode and switching transistor
Higher frequency operation
Reduced snubbing
Reduced parts count
DESCRIPTION
HFA15TB60 is a state of the art ultrafast recovery
diode. Employing the latest in epitaxial construction
and advanced processing techniques it features
a superb combination of characteristics which result
in performance which is unsurpassed by any rectifier
previously available. With basic ratings of 600V
and 15 A continuous current, the HFA15TB60 is
especially well suited for use as the companion
diode for IGBTs and MOSFETs. In addition to ultrafast
recovery time, the FRED product line features
extremely low values of peak recovery current (IRRM)
and does not exhibit any tendency to “snap-off” during
the tb portion of recovery. The FRED features combine
to offer designers a rectifier with lower noise and
significantly lower switching losses in both the diode
and the switching transistor. These FRED advantages
can help to significantly reduce snubbing, component
count and heatsink sizes. The FRED HFA15TB60
is ideally suited for applications in power supplies and
conversion systems (such as inverters), motor drives,
and many other similar applications where high speed,
high efficiency is needed.
cathode
2
13
Cathode Anode
TO-220AC
PRODUCT SUMMARY
VR
VF at 15A at 25 °C
IF(AV)
trr (typical)
TJ (maximum)
Qrr
dI(rec)M/dt
Available
RoHS*
COMPLIANT
600 V
1.7 V
15 A
19 ns
150 °C
84 nC
188 A/μs
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Cathode to anode voltage
Maximum continuous forward current
Single pulse forward current
Maximum repetitive forward current
Maximum power dissipation
Operating junction and storage temperature range
SYMBOL
VR
IF
IFSM
IFRM
PD
TJ, TStg
TEST CONDITIONS
TC= 100 ºC
TC= 25 ºC
TC = 100 ºC
VALUES
600
15
150
60
74
29
- 55 to 150
UNITS
V
A
W
ºC
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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Cathode to anode
breakdown voltage
VBR
Maximum forward voltage
VFM
Maximum reverse
leakage current
Junction capacitance
Series inductance
IRM
CT
LS
(TJ = 25 ºC unless otherwise specified)
TEST CONDITIONS
MIN.
IR = 100 µA
600
IF = 15 A
IF = 30 A
IF = 15 A, TJ = 125 ºC
VR = VR rated
TJ = 125°C, VR = VR rated
VR = 200V
Measured lead to lead 5 mm from package body
-
-
-
-
-
-
-
TYP.
-
1.5
1.8
1.4
1.0
400
25
8
MAX. UNITS
-
1.7
2.1
1.6
10
1000
50
-
V
µA
pF
nH
DYNAMIC RECOVERY CHARACTERISTICS PERLEG (TJ = 25 ºC unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP. MAX.
Reverse recovery time
IF = 0.5A, IR = 1.0A, IRR = 250mA (RG#1 CKT)
-
trr
IF = 1.0 A, dIF/dt = -200 A/µs, VR =30 V, TJ = 25°C
-
trr1 TJ = 25 ºC
-
22 30
19 -
42 60
Peak recovery current
Reverse recovery charge
trr2
IRRM1
IRRM2
Qrr1
Qrr2
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
TJ = 25 ºC
TJ = 125 ºC
- 74 120
- 4.0 6.0
IF= 15A
- 6.5 10
dIF/dt = -200 A/µs
VR = 200 V
- 84 180
- 241 600
Peak rate of fall of recovery
current during tb
dl(rec)M/dt1
dl(rec)M/dt2
TJ = 25 ºC
TJ = 125 ºC
- 188 -
- 160 -
UNITS
ns
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Lead temperature
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Tlead
RthJC
RthJA
0.063" from case (1.6 mm) for 10 s
Typical socket mount
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and gerased
Weight
Mounting torque
Marking device
Case style TO-220AC
MIN.
-
-
-
-
-
-
6
(5)
TYP.
-
-
MAX.
300
1.7
UNITS
°C
- 80 K/W
0.5 -
2-
0.07 -
-
12
(10)
HFA15TB60
g
oz.
kgf . cm
(lbf . in)
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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
Fig.1 Maximum Forward Voltage Drop vs.
Instantaneous Forward Current
100
10
TJ = 150 ºC
TJ = 125 ºC
TJ = 25 ºC
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
VFM - Forward Voltage Drop (V)
Fig.2 Typical Reverse Current vs. Reverse Voltage
10 000
1000
100
TJ = 150 ºC
TJ = 125 ºC
10
1 TJ = 25 ºC
0.1
0.01
100 200 300 400 500 600
Reverse Voltage-VR(V)
Fig.3 Typical Junction Capacitance vs. Reverse Voltage
100
TJ = 25 ºC
10
1
0.1
0.01
0.00001
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10
10
100
Reverse Voltage-VR (V)
1000
Fig.4 Maximum Thermal Impedance Z thJC Characteristics
Single pulse
(thermal response)
0.0001
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.001
0.01
PDM
t
1
t
2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = P DM x ZthJC + TC
0.1
Rectangular Pulse Duration-t1(s)
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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
Fig.5 Typical Reverse Recovery Time vs. dIF/dt
100
IF= 30 A
IF= 15 A
80 IF= 5 A
60
40
20 VTTJJR===1222505º0VC
0
100
dIF/dt (A/μs)
1000
Fig.7 Typical Stored Charge vs. dIF/dt
800
700 VTTJJR===1222505º0VC
600
500
IF= 30 A
400 IF= 15 A
IF= 5 A
300
200
100
0
100
dIF/dt (A/μs)
1000
Fig.6 Typical Recovery Current vs. dIF/dt
25
20 TVTJJR===1222505º0VC
15 IF= 30 A
IF= 15 A
10 IF= 5 A
5
0
100
dIF/dt (A/μs)
1000
Fig.8 Typical dI(rec)M/dt vs. dlF/dt
10000
IF= 30 A
IF= 15 A
IF= 5 A
1000
100
100
VTTJJR===1222505º0VC
dIF/dt (A/μs)
1000
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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
Fig.9 Reverse Recovery Parameter Test Circuit
VR = 200 V
L = 70 μH
0.01 Ω
D.U.T.
dIF/dt
adjust
G
D
IRFP250
S
Fig.10 Reverse Recovery Waveform and Definitions
IF
0
(3)
trr
ta
tb
(2) IRRM
(4)
Qrr
0.5 IRRM
dI(rec)M /dt (5)
(1) dIF/dt
0.75 IRRM
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50RIRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x lRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
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Page 5 of 6


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SEMICONDUCTOR
N-HFA15TB60 RRooHHSS
Nell High Power Products
ORDERING INFORMATION TABLE
Device code N - HFA 15 TB 60
1 2 3 45
1-
2-
3-
4-
5-
Nell Semiconductors product
FRED family
Current rating (15 = 15 A)
Package : TB = TO-220AC
Voltage rating (60 = 600 V)
Cathode
0.058 [1.47]
0.047 [1.19]
0.362 [9.19]
0.354 [8.99]
0.110 [2.79]
0.099 [2.51]
TO-220AC Package Outline
0.186 [4.72]
0.174 [4.42]
0.404 [10.26]
0.393 [9.98]
0.114 [2.90]
0.102 [2.59]
0.508 [12.90]
0.492 [12.50]
Ø0.153 [3.89]
Ø0.149 [3.78]
0.154 [3.91]
0.134 [3.40]
0.531 [13.49]
0.515 [13.08]
0.018 [0.46]
0.014 [0.36]
0.100 [2.54] TYP
0.204 [5.18]
0.196 [4.98]
0.057 [1.45]
0.047 [1.19]
Cathode
Anode
0.034 [0.86]
0.030 [0.76]
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