2N3904 Datasheet PDF
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2N3904 / MMBT3904 / PZT3904
NPN General Purpose Amplifier
Features
• This device is designed as a general purpose amplifier and switch.
• The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier.
October 2011
2N3904
EB C
TO-92
MMBT3904
C
SOT-23
Mark:1A
E
B
PZT3904
C
SOT-223
E
C
B
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VCEO
VCBO
VEBO
IC
TJ, Tstg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
40
60
6.0
200
-55 to +150
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25°C unless otherwise noted
Symbol
Parameter
2N3904
Max.
*MMBT3904 **PZT3904
Units
PD
Total Device Dissipation
Derate above 25°C
625
350
1,000
mW
5.0 2.8 8.0 mW/°C
RθJC
Thermal Resistance, Junction to Case
83.3
°C/W
RθJA
Thermal Resistance, Junction to Ambient
200
357
125 °C/W
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
** Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.
© 2011 Fairchild Semiconductor Corporation
2N3904 / MMBT3904 / PZT3904 Rev. B0
1
www.fairchildsemi.com
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