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Manufacture Part Number Description PDF
Toshiba Semiconductor
Toshiba Semiconductor
C1815 Silicon NPN Epitaxail Type(for Audio Frequency General Purpose Amplifier Applications)
2SC1815
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)

2SC1815
Audio Frequency General Purpose Amplifier Applications Driver Stage Amplifier Applications
• • High voltage and high cu
 pdf
Jiangsu Changjiang Electronics Technology
Jiangsu Changjiang Electronics Technology
C1815 Plastic Encapsulate Transistors


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

TO-92 Plastic-Encapsulate Transistors
C1815
FEATURES Power dissipation MAXIMUM RATINGS* TA=25℃ unless otherwise noted
Symbol V
 pdf
Shanghai
Shanghai
C1815 Silicon NPN Epitaxial Transistor


C1815 C1815 Silicon NPN Epitaxial Transistor Description : The C1815 is designed for audio frequency general purpose amplifier applications and driver stage amplifier applications
 pdf
WILLAS
WILLAS
C1815 SOT-23 Plastic-Encap sulate Transistors
WILLAS
SOT-23 Plastic-Encap sulate Transistors 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123+ PACKAGE

FM120-M &115 THRU
FM1200-
Pb Free Prod

Features

• Batch process design, 
 pdf
WEITRON
WEITRON
C1815 NPN Plastic-Encapsulate Transistors
C1815

NPN Plastic-Encapsulate Transistors
P b Lead(Pb)-Free

FEATURES Power dissipation

MAXIMUM RATINGS* TA=25℃ unless otherwise noted

Symbol

Parameter

Value

Units

VCBO VCEO VEBO IC

Collecto
 pdf
RECTRON
RECTRON
C1815 NPN Transistor
C1815

SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN)

FEATURES

* Power dissipation

PCM :

0.2 W (Tamb=25OC)

* Collector current

ICM :

0.15

mA

* Collector-base voltage

V(BR)CBO : 60

V

* Operatin
 pdf
SeCoS
SeCoS
C1815 NPN Plastic Encapsulated Transistor
Elektronische Bauelemente

C1815
200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor

FEATURE
Power Dissipation
MARKING: HF

RoHS Compliant Product A suffix of “-C” specifies halogen & lead-f
 pdf
Comchip Technology
Comchip Technology
C1815-G General Purpose transistors
General Purpose Transistors

COMCHIP
SMD Diodes Specialist

C1815-G (NPN)
RoHS Device
Features
-Power dissipation P CM =0.2W
0.056(1.40) 0.047(1.20)

SOT-23
0.119(3.00) 0.110(2.80)

3

Marking: HF
Col
 pdf
Weitron Technology
Weitron Technology
C1815LT1 Transistor


C1815LT1
C1815LT1
FEATURES Power dissipation PCM: 0.2 W (Tamb=25 )
1. 0

TRANSISTOR (NPN)

* “G” Lead(Pb)-Free

SOT-23
1. BASE 2. EMITTER 3. COLLECTOR

Collector current ICM: 
 pdf
Jiangsu Changjiang Electronics
Jiangsu Changjiang Electronics
C1815LT1 TRANSISTOR (NPN)


JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD

SOT-23 Plastic-Encapsulate Transistors
C1815LT1
FEATURES Power dissipation PCM : 0.2 W£¨ Tamb=25¡æ£© Collector current ICM
 pdf


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