ZY70N65

ZY70N65 N-CHANNEL 65V - 70A TO-220 POWER MOSFET TYPE Bvdss Rdson ZY70N65 65V 10mΩ Typical Rdson = 8.5mΩ Exceptional dv/dt Capability 100% Avalanche Tested Application Oriented Characterization Id 70A DESCRIPTION This Power Mosfet series realized with SZY Corp. DMOS technology trench process has specifically signed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC Converters for Telecom and Computer application. It is also intended for any application with low gate charge drive requirements. APPLICATIONS HIGH-EFFICIENCY DC-DC CONVERTERS DC MOTOR CONTROL UPS AUTOMOTIVE ENVIRONMENT Symbol ABSOLUTE MAXIMUM RATINGS Parameter Vds Drain-Source Voltage ( Vgs=0 ) Vdgr Drain-gate Voltage (RGS = 20 KΩ) Vgs Gate- source Voltage Id (a) Drain Current (continuous) at TC = 25　℃ Id Drain Current (continuous) at TC = 100　℃ IDM (b) Drain Current (pulsed) Ptot Total Dissipation at TC = 25　℃ Derating Factor dv / dt (1) Peak Diode Recovery voltage slope Eas (2) Single Pulse Avalanche Energy Tstg Storage Temperature Tj Max. Operating Junction Temperature (a) Current limited by package (b) Pulse width limited by safe operating area Value 65 65 ±20V 70 42 240 110 0.7 4 360 Unit V V V A A A W W/℃ V/ns mj -55~175 ℃ (1) ISD ≤60A, di/dt ≤400A/us, VDD ≤24V, Tj ≤TJMAX. (2) Starting Tj = 25 ℃, ID = 30A, VDD = 30V THERMAL DATA Rthj-case Thermal Resistance Junction-case Rthj-amb Therm...