ZXTN25012EZ 12V NPN high gain transistor in SOT89
Summary
BVCEO > 12V BVECX > 6V www.DataSheet4U.com hFE > 500 IC(cont) ...
ZXTN25012EZ 12V NPN high gain transistor in SOT89
Summary
BVCEO > 12V BVECX > 6V www.DataSheet4U.com hFE > 500 IC(cont) = 6.5A VCE(sat) < 38mV @ 1A RCE(sat) = 25m⍀ PD = 2.4W Complementary part number ZXTP25012EZ
Description
Packaged in the SOT89 outline this new ultra high gain, low saturation 12V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits and various driving and power management functions
C
B
Features
6.5A continuous current Up to 15A peak current Very low saturation
voltages 6V reverse blocking
voltage
E
Applications
LED driving Motor driving Boost converters Royer converters Camera strobe
MOSFET gate drivers
E C C B Pinout - top view
Ordering information
Device ZXTN25012EZTA Reel size (inches) 7 Tape width (mm) 12 Quantity per reel 1000
Device marking
1K7 Issue 1 - December 2007
© Zetex Semiconductors plc 2007
1
www.zetex.com
ZXTN25012EZ
Absolute maximum and thermal ratings
Parameter Collector-Base
voltage Collector-Emitter
voltage Emitter-Collector
voltage (reverse blocking) Emitter-Base
voltage
www.DataSheet4U.com Continuous
Symbol VCBO VCEO VECX VEBO IC IB ICM PD PD PD PD PD Tj, Tstg
Limit 20 12 6 7 6.5 1 15 1.1 8.8 1.8 14.4 2.4 19.2 4.46 35.7 19.2 153 -55 to +150
Unit V V V V A A A W mW/°C W mW/°C W mW/°C W mW/°C W mW/°C °C
Collector current(c)
Base current Peak pulse current Power dissipation at TA =25°C(a) Linear derating factor Power dissipation at TA =25°C(b) Linear derating fac...