ZXTN2020F

www.DataSheet4U.com ZXTN2020F 100V, SOT23, NPN medium power transistor Summary V(BR)CEV > 160V, V(BR)CEO > 100V IC(cont) = 4A RCE(sat) = 30m⍀ typical VCE(sat) < 50mV @ 1A PD = 1.2W Complementary part number: ZXTP2029F Description Advanced process capability and package design have been used to maximize the power handling and performance of this small outline transistor. The compact size and ratings of this device make it ideally suited to applications where space is at a premium. Features Higher power dissipation SOT23 package High peak current Low saturation voltage 160V forward blocking voltage Applications MOSFET and IGBT gate driving Motor drive Relay, lamp and solenoid drive Ordering information Device ZXTN2020FTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3,000 Pinout - top view Device marking 853 Issue 4 - January 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com DataSheet 4 U .com www.DataSheet4U.com ZXTN2020F Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Collector-emitter voltage Emitter-base voltage Peak pulse current Continuous collector current(a) Base current Power dissipation @ TA=25oC(a) Linear derating factor Power dissipation @ TA=25oC(b) Linear derating factor Power dissipation @ TA=25oC(c) Linear derating factor Operating and storage temperature Symbol VCBO V(BR)CEV VCEO VEBO ICM IC IB PD PD PD Tj:Tstg Limit 160 160 100 7 12 4 1 1.0 8 1.2 9.6 1.56 12.5 -55 to +150 Unit V V V V...