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ZXTN2011G

Part Number	ZXTN2011G
Manufacturer	Diodes
Description	NPN Transistor
Features	 BVCEO > 100V  IC = 6A Continuous Collector Current  ICM = 10A Peak Pulse Current  Low Saturation Voltage VCE(sat) <...
Published	Mar 17, 2017
Datasheet	ZXTN2011G PDF File

Features

 BVCEO > 100V
 IC = 6A Continuous Collector Current
 ICM = 10A Peak Pulse Current
 Low Saturation Voltage VCE(sat) < 65mV max @ 1A
 RSAT = 36mΩ @ Ic =6A for Low Equivalent On-Resistance
 hFE Specified up to 10A for High Gain Hold Up
 Lead-Free...

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ZXTN2011Z
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(Diodes)

INDEX :5 7 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z

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