ZXMN7A11K

www.DataSheet4U.com ZXMN7A11K 70V N-channel enhancement mode MOSFET Summary V(BR)DSS=70V : RDS(on)=0.13⍀ ID=6.1A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage power management applications. Features Low on-resistance Fast switching speed Low threshold Low gate drive DPAK package D G S Applications DC-DC converters Power management functions Disconnect switches Motor control Class D audio output stages D D Ordering information Device ZXMN7A11KTC Reel size (inches) 13 Tape width (mm) 16 Quantity per reel 2,500 G S Pinout - top view Device marking ZXMN 7A11 Issue 2 - August 2006 © Zetex Semiconductors plc 2006 1 www.zetex.com ZXMN7A11K Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current @ VGS=10V; TA=25°C (b) @ VGS=10V; TA=70°C (b) @ VGS=10V; TA=25°C (a) Pulsed drain current (c) Continuous source current (body diode) (b) Pulsed source current (body diode) (c) Power dissipation at TA =25°C (a) Linear derating factor Power dissipation at TA =25°C (b) Linear derating factor Power dissipation at TA =25°C (d) Linear derating factor Operating and storage temperature range IDM IS ISM PD Symbol VDSS VGS ID Limit 70 ±20 6.1 4.9 4.2 17 8.7 17 4.06 32.4 PD 8.5 68 PD 2.11 16.8 Tj, Tstg -55 to +150 °C W mW/°C W mW/°C A A A W mW/°C Unit V V...